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公开(公告)号：US5362972A
公开(公告)日：1994-11-08
申请号：US686780
申请日：1991-04-17
申请人： Masamitsu Yazawa , Kenji Hiruma , Toshio Katsuyama , Nobutaka Futigami , Hidetoshi Matsumoto , Hiroshi Kakibayashi , Masanari Koguchi , Gerard P. Morgan , Kensuke Ogawa
发明人： Masamitsu Yazawa , Kenji Hiruma , Toshio Katsuyama , Nobutaka Futigami , Hidetoshi Matsumoto , Hiroshi Kakibayashi , Masanari Koguchi , Gerard P. Morgan , Kensuke Ogawa
IPC分类号： C30B25/00 , H01L21/20 , H01L21/334 , H01L21/335 , H01L21/336 , H01L21/34 , H01L29/06 , H01L29/12 , H01L29/772 , H01L29/775 , H01L29/861 , H01L33/18 , H01S5/10 , H01S5/34 , H01L33/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , C30B25/005 , C30B29/40 , H01L21/02395 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02551 , H01L21/02568 , H01L21/0262 , H01L21/02639 , H01L29/0673 , H01L29/0676 , H01L29/125 , H01L29/66454 , H01L29/66462 , H01L29/66469 , H01L29/66522 , H01L29/66931 , H01L29/7722 , H01L29/775 , H01L29/861 , H01S5/341 , H01L27/15 , H01L33/18 , H01S5/1042
摘要： A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.
摘要翻译： 一种场效应晶体管和使用半导体晶须的弹道晶体管，每个半导体晶须具有期望的直径并形成在期望的位置，使用其作为电子发射材料的半导体真空微电子器件，使用该半导体晶须的量子线等的发光器件 披露
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公开(公告)号：US09246444B2
公开(公告)日：2016-01-26
申请号：US13346925
申请日：2012-01-10
CPC分类号： H03F1/565 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2203/21103 , H03F2203/21139 , H03H7/38 , H03H7/48
摘要： When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.
摘要翻译： 当安装在诸如移动电话的移动通信设备中的功率放大器由平衡放大器组成时，提供了可以减少功率组合器中的电力组成的损失的技术。 根据本实施例的技术思想，通过将隔离电容器元件分成两个高对称性并联并联的电容器元件，即使形成电容器元件，也可以使由这些电容器元件产生的几乎相等的寄生电容 作为布线基板的层间电容器元件。
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53.发明授权公开(公告)号：US08229373B2
公开(公告)日：2012-07-24
申请号：US11430172
申请日：2006-05-09
IPC分类号： H01Q11/12
CPC分类号： H03G3/3042 , H03F1/0261 , H03F3/191 , H03F3/24 , H03F2200/105 , H03F2200/207 , H03F2200/294 , H03F2200/372 , H03F2200/471 , H03F2200/99
摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.
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公开(公告)号：US20110221885A1
公开(公告)日：2011-09-15
申请号：US13112576
申请日：2011-05-20
IPC分类号： H04N7/18
CPC分类号： G01N21/958 , G01N21/21 , G01N2021/8816 , G01N2021/8967
摘要： A transparent body inspecting device includes: a light application unit for applying light to a transparent body; an image capturing unit which captures an image of the transparent body and in which a depth of field is smaller than a height of the transparent body; an image capture driving unit for moving the image capturing unit in a direction in which the image capturing unit is brought close to the transparent body and in a direction in which the image capturing unit is brought away from the transparent body; and a defect determining unit for determining existence or nonexistence of a defect in the transparent body based on whether or not brightness of pixels in the image captured by the image capturing unit is nonuniform, wherein: the image capturing unit carries out image capture more than once while moving in the direction in which the image capturing unit is brought close to the transparent body or in the direction in which the image capturing unit is brought away from the transparent body; and when the brightness of pixels in the image captured by the image capturing unit is nonuniform, the defect determining unit determines that a defect exists within the depth of field at the time of capture of this image.
摘要翻译： 透明体检查装置包括：将光施加到透明体的光施加单元; 拍摄所述透明体的图像并且其中景深小于所述透明体的高度的图像拍摄单元; 图像拍摄驱动单元，用于使图像拍摄单元沿着使图像拍摄单元靠近透明体的方向以及使图像拍摄单元从透明体离开的方向移动; 以及缺陷确定单元，用于基于由所述图像捕获单元捕获的图像中的像素的亮度是否不均匀来确定所述透明体中的缺陷的存在或不存在，其中：所述图像捕获单元执行不止一次的图像捕获 同时沿着图像拍摄单元靠近透明体的方向或者使图像拍摄单元从透明体离开的方向移动; 并且当由图像拍摄单元拍摄的图像中的像素的亮度不均匀时，缺陷确定单元确定在拍摄该图像时在景深内存在缺陷。
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公开(公告)号：US07547929B2
公开(公告)日：2009-06-16
申请号：US11247234
申请日：2005-10-12
申请人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
发明人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC分类号： H01L29/40
CPC分类号： H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
摘要翻译： 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。
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公开(公告)号：US07368996B2
公开(公告)日：2008-05-06
申请号：US11209692
申请日：2005-08-24
IPC分类号： H03F3/45
CPC分类号： H03F3/191 , H03F1/26 , H03F3/24 , H03F3/45085 , H03F2200/09 , H03F2200/315 , H03F2200/318 , H03F2200/372 , H03F2200/391 , H03F2203/45638 , H03G1/0023 , H03G3/3042
摘要： Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.
摘要翻译： 公开了具有高度稳定和优异的可控性的功率放大器，并且与常规功率放大器相比具有低噪声。 使用功率放大器，在其初始阶段提供由晶体管Q 1，Q 2组成的差分放大器，并且平衡 - 不平衡变换器作为由Cp 1，Cp 2，Lp 1和Ct 1组成的级间匹配电路， Ct 2，Lt 1分别设置在初级和第二级之间，而在第二级提供不平衡单端电路。 差分放大器具有用于将两个发射极彼此耦合的发射极耦合型配置，并且通过改变耦合到两个发射极的电流源的电流来执行初始阶段放大器的输出控制。
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公开(公告)号：US20070298736A1
公开(公告)日：2007-12-27
申请号：US11764511
申请日：2007-06-18
CPC分类号： H03G3/004 , H03F1/02 , H03F1/0266 , H03F1/0277 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/108 , H03F2200/181 , H03F2200/432 , H03F2200/451 , H03F2200/456 , H04B2001/045
摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.
摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的终端放大功率器件的第一和第二放大器Q 1和Q 2。 放大器Q 1和Q 2形成在一个半导体芯片上。 放大器Q 1的第一偏置电压Vg1被设置为高于放大器Q 2的第二偏置电压Vg 2，使得放大器Q 1在B类和AB之间工作，并且Q 2在C类中可操作 放大器Q 1的第一有效器件尺寸Wgq1被有意地设置为小于放大器Q 2的第二有效器件尺寸Wgq 2超过半导体芯片的制造误差的范围。 无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。
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公开(公告)号：US20070046370A1
公开(公告)日：2007-03-01
申请号：US11489609
申请日：2006-07-20
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
IPC分类号： H03G3/10
CPC分类号： H03G3/3042 , H03F1/30 , H03F3/189 , H03F3/68 , H03G3/3047
摘要： In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.
摘要翻译： 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。
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59.发明申请High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier 有权高频功率放大器，发射器和移动通信终端使用功率放大器公开(公告)号：US20060267688A1
公开(公告)日：2006-11-30
申请号：US11430172
申请日：2006-05-09
IPC分类号： H03G3/00
CPC分类号： H03G3/3042 , H03F1/0261 , H03F3/191 , H03F3/24 , H03F2200/105 , H03F2200/207 , H03F2200/294 , H03F2200/372 , H03F2200/471 , H03F2200/99
摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.
摘要翻译： 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的AC电压振幅，并且当电压幅度超过预定阈值时，抑制功率放大器的输入信号幅度。
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公开(公告)号：US20060061417A1
公开(公告)日：2006-03-23
申请号：US11182859
申请日：2005-07-18
CPC分类号： H03F1/0277 , H03F3/191 , H03F3/72 , H03F2203/7206
摘要： For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.
摘要翻译： 为了在包括大功率放大器和低功率放大器的放大器配置中使用，该功率放大器和低功率放大器总是在高频率下互连，并且在不使用开关的情况下进行开关之间，高稳定的高频功率放大器模块之间具有高隔离度 提供放大器。 为了将处于激活状态的低功率放大器部分的周围环绕到处于去激活状态的高功率放大器部分或者处于激活状态的高功率放大器部分到处于去激活状态的低功率放大器部分， 具有高隔离特性的输入匹配电路包括在与放大器效率无关的输入匹配电路部分中。 每个放大器部分在激活状态和去激活状态之间的切换通过使用偏置输入端的控制来实现。
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