公开(公告)号：US5362972A

公开(公告)日：1994-11-08

申请号：US686780

申请日：1991-04-17

申请人： Masamitsu Yazawa ,  Kenji Hiruma ,  Toshio Katsuyama ,  Nobutaka Futigami ,  Hidetoshi Matsumoto ,  Hiroshi Kakibayashi ,  Masanari Koguchi ,  Gerard P. Morgan ,  Kensuke Ogawa

发明人： Masamitsu Yazawa ,  Kenji Hiruma ,  Toshio Katsuyama ,  Nobutaka Futigami ,  Hidetoshi Matsumoto ,  Hiroshi Kakibayashi ,  Masanari Koguchi ,  Gerard P. Morgan ,  Kensuke Ogawa

IPC分类号： C30B25/00 ,  H01L21/20 ,  H01L21/334 ,  H01L21/335 ,  H01L21/336 ,  H01L21/34 ,  H01L29/06 ,  H01L29/12 ,  H01L29/772 ,  H01L29/775 ,  H01L29/861 ,  H01L33/18 ,  H01S5/10 ,  H01S5/34 ,  H01L33/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  C30B25/005 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66522 ,  H01L29/66931 ,  H01L29/7722 ,  H01L29/775 ,  H01L29/861 ,  H01S5/341 ,  H01L27/15 ,  H01L33/18 ,  H01S5/1042

摘要： A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.

摘要翻译： 一种场效应晶体管和使用半导体晶须的弹道晶体管，每个半导体晶须具有期望的直径并形成在期望的位置，使用其作为电子发射材料的半导体真空微电子器件，使用该半导体晶须的量子线等的发光器件 披露

公开(公告)号：US5332910A

公开(公告)日：1994-07-26

申请号：US159343

申请日：1993-11-30

申请人： Keiichi Haraguchi ,  Kenji Hiruma ,  Kensuke Ogawa ,  Toshio Katsuyama ,  Ken Yamaguchi ,  Toshiyuki Usagawa ,  Masamits Yazawa ,  Toshiaki Masuhara ,  Gerard P. Morgan ,  Hiroshi Kakibayashi

发明人： Keiichi Haraguchi ,  Kenji Hiruma ,  Kensuke Ogawa ,  Toshio Katsuyama ,  Ken Yamaguchi ,  Toshiyuki Usagawa ,  Masamits Yazawa ,  Toshiaki Masuhara ,  Gerard P. Morgan ,  Hiroshi Kakibayashi

IPC分类号： G02B6/42 ,  H01L33/00 ,  H01L33/24 ,  H01S3/067 ,  H01S5/00 ,  H01S5/02 ,  H01S5/06 ,  H01S5/10 ,  H01S5/12 ,  H01S5/18 ,  H01S5/183 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/40 ,  H01S5/42 ,  H01S5/50

CPC分类号： H01L33/24 ,  B82Y20/00 ,  G02B6/4202 ,  H01L33/0062 ,  H01S5/1228 ,  H01S5/183 ,  H01S5/4031 ,  H01S3/06708 ,  H01S5/0028 ,  H01S5/0217 ,  H01S5/0608 ,  H01S5/1042 ,  H01S5/105 ,  H01S5/18 ,  H01S5/223 ,  H01S5/3202 ,  H01S5/3412 ,  H01S5/4006 ,  H01S5/4056 ,  H01S5/423 ,  H01S5/5045

摘要： A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.

摘要翻译： 半导体发光器件包括多个半导体棒，每个半导体棒具有pn结。 半导体棒形成在半导体衬底上，使得多个半导体棒被布置成基本上等于从半导体棒发射的光的波长的整数倍的距离。 利用这样的装置，可以实现各种新颖的光学装置，例如阈值电流极小的微腔激光器和不具有阈值的相干发光装置。

公开(公告)号：US5351128A

公开(公告)日：1994-09-27

申请号：US919676

申请日：1992-07-27

申请人： Shigeo Goto ,  Hidetoshi Matsumoto ,  Masamitsu Yazawa ,  Yasunari Umemoto ,  Yoko Uchida ,  Kenji Hiruma

发明人： Shigeo Goto ,  Hidetoshi Matsumoto ,  Masamitsu Yazawa ,  Yasunari Umemoto ,  Yoko Uchida ,  Kenji Hiruma

IPC分类号： H01L29/45 ,  H01L29/16 ,  H01L29/205

CPC分类号： H01L29/452

摘要： A field-effect transistor or a bipolar transistor may be provided in which the contact resistance between a channel layer or base layer and a contact layer are reduced. For example, an InGaAs buffer layer may be formed on the substrate side of an InGaAs channel layer of a field-effect transistor and by the bypassing effect that carriers pass through this InGaAs buffer layer, the InGaAs channel layer comes in contact with the contact layer with a low resistance. The contact resistance between the InGaAs channel layer and the contact layer can be reduced to 10 ohm per a width of 10.mu.m, and as a result, the value of transconductance factor K of a field-effect transistor can be increased in 14 mA/V.sup.2 per a width of 10.mu.m.

摘要翻译： 可以提供场效应晶体管或双极晶体管，其中沟道层或基极层与接触层之间的接触电阻降低。 例如，可以在场效应晶体管的InGaAs沟道层的衬底侧上形成InGaAs缓冲层，并且通过载流子通过该InGaAs缓冲层的旁路效应，InGaAs沟道层与接触层接触 具有低阻力。 InGaAs沟道层和接触层之间的接触电阻可以减小到10欧姆，宽度为10微米，结果是场效应晶体管的跨导因子K的值可以增加到14mA / V2宽度为10微米。

公开(公告)号：US5701019A

公开(公告)日：1997-12-23

申请号：US517125

申请日：1995-08-21

申请人： Hidetoshi Matsumoto ,  Masamitsu Yazawa ,  Kenji Hiruma

发明人： Hidetoshi Matsumoto ,  Masamitsu Yazawa ,  Kenji Hiruma

IPC分类号： H01L29/812 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8254 ,  H01L27/06 ,  H01L29/778 ,  H01L29/80 ,  H01L31/0328 ,  H01L21/336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L21/28587 ,  H01L21/8254 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/802

摘要： A semiconductor device (e.g., hetero-junction field-effect transistor) which has decreased capacitance between the gate and drain, and which has decreased source resistance, is provided. Structure in which a contact layer 6 comes in contact with the side surfaces of a channel layer 3 but does not come in contact with the side surfaces of a barrier layer 4 enables capacitance between the gate and drain to be decreased. This capacitance can be decreased down to 1.5 pF per 10 .mu.m of the width.

摘要翻译： 提供了具有降低的栅极和漏极之间的电容并且具有降低的源极电阻的半导体器件（例如异质结场效应晶体管）。 接触层6与沟道层3的侧表面接触但不与阻挡层4的侧表面接触的结构使栅极和漏极之间的电容减小。 该电容可以降低到每10微米宽度1.5磅/平方米。

公开(公告)号：US20110155236A1

公开(公告)日：2011-06-30

申请号：US12975755

申请日：2010-12-22

申请人： Hajime Goto ,  Takashi Fukui ,  Junichi Motohisa ,  Kenji Hiruma

发明人： Hajime Goto ,  Takashi Fukui ,  Junichi Motohisa ,  Kenji Hiruma

IPC分类号： H01L31/06 ,  H01L31/0352 ,  B82Y40/00

CPC分类号： H01L31/035227 ,  H01L31/02167 ,  H01L31/03529 ,  H01L31/0693 ,  H01L31/077 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： To provide a solar cell enabling practical electric power to be obtained and excitons to be effectively collected, and a manufacturing method of the solar cell. A nanowire solar cell 1 comprises: a semiconductor substrate 2; a plurality of nanowire semiconductors 4 and 5 forming pn junctions; a transparent insulating material 6 filled in the gap between the plurality of nanowire semiconductors 4 and 5; an electrode 7 covering the end portion of the plurality of nanowire semiconductors 4 and 5; and a passivation layer 10 provided between the semiconductor 5 and the transparent insulating material 6 and between the semiconductor 5 and the electrode 7.

摘要翻译： 提供能够获得实际电力并有效收集激子的太阳能电池，以及太阳能电池的制造方法。 纳米线太阳能电池1包括：半导体衬底2; 形成pn结的多个纳米线半导体4和5; 填充在多个纳米线半导体4和5之间的间隙中的透明绝缘材料6; 覆盖多个纳米线半导体4和5的端部的电极7; 以及设置在半导体5和透明绝缘材料6之间以及半导体5和电极7之间的钝化层10。

公开(公告)号：US4933728A

公开(公告)日：1990-06-12

申请号：US309929

申请日：1989-02-13

申请人： Tadashi Fukuzawa ,  Eizaburo Yamada ,  Kenji Hiruma ,  Hiroyoshi Matsumura

发明人： Tadashi Fukuzawa ,  Eizaburo Yamada ,  Kenji Hiruma ,  Hiroyoshi Matsumura

IPC分类号： H01S5/00 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/34

摘要： A semiconductor optical device in which a hetero-structure is constructed by sandwiching a semiconductor layer including a thin film made of a semiconductor or insulator between semiconductors having a larger band gap than that of the thin film so that the electron-hole pairs generated through the thin film may recombine by the tunnel effect to emit an optical beam. The optical device is equipped with electrodes for controlling the probability of said recombination.

摘要翻译： 一种半导体光学器件，其中通过将包括由半导体或绝缘体制成的薄膜的半导体层夹在具有比薄膜的带隙更大的带隙的半导体之间构成异构体，使得通过 薄膜可以通过隧道效应重新组合以发射光束。 光学装置配备有用于控制所述重组的概率的电极。

公开(公告)号：US4847573A

公开(公告)日：1989-07-11

申请号：US860412

申请日：1986-05-07

申请人： Tadashi Fukuzawa ,  Eizaburo Yamada ,  Kenji Hiruma ,  Hiroyoshi Matsumura

发明人： Tadashi Fukuzawa ,  Eizaburo Yamada ,  Kenji Hiruma ,  Hiroyoshi Matsumura

IPC分类号： G02F1/015 ,  G02F1/017

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/0157

摘要： An optical modulator which utilizes the Stark effect according to which the absorption spectra change if an electric field is applied to the excitons. A thin film of a suitable thickness composed of a semiconductor and an insulator or composed of either one of them, is formed between a group of electrons and a group of positive holes that constitute excitons, so that the excitons are stabilized. The optical modulator performs the modulation at high speeds maintaining a high efficiency.

摘要翻译： 利用斯塔克效应的光学调制器，如果对激子施加电场，则吸收光谱发生变化。 在一组电子和一组构成激子的正空穴之间形成由半导体和绝缘体组成的合适厚度的薄膜，或者由它们中的任意一个构成的薄膜，使得激子稳定。 光调制器以高速执行调制，保持高效率。

公开(公告)号：US5381027A

公开(公告)日：1995-01-10

申请号：US134622

申请日：1993-10-12

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/804 ,  H01L29/784

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by intoduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用于其源极和漏极区域的形成来制造通过诸如通过离子注入引起杂质的异质结的紊乱或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US5025751A

公开(公告)日：1991-06-25

申请号：US366185

申请日：1989-06-14

申请人： Shinichiro Takatani ,  Shigeo Goto ,  Masahiko Kawata ,  Kenji Hiruma

发明人： Shinichiro Takatani ,  Shigeo Goto ,  Masahiko Kawata ,  Kenji Hiruma

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14

CPC分类号： C23C16/4551 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  Y10S148/169

摘要： A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.

摘要翻译： 一种固体成膜装置，例如MO-MBE（金属有机分子束外延）装置，其中通过开关装置从生长室隔离并连接到原料气体导入管的可排出容器设置在生长室之间用于 固体膜，例如化合物半导体和原料气体导入管。 至少在固体膜生长期间开关装置关闭时，通过打开和关闭开关装置并抽出容器来控制固体膜的生长。 可以防止由于不用于生长的容器中的残留气体对生长的膜产生不期望的影响，因此可以以非常高的可控性进行原料气体截留和引入生长室，并且可以进行膜的 可以获得膜之间的界面的优异的突变性，例如化合物半导体的异质结。

公开(公告)号：US4737015A

公开(公告)日：1988-04-12

申请号：US674770

申请日：1984-11-26

申请人： Koji Ishida ,  Hiroyoshi Matsumura ,  Kenji Hiruma ,  Kazuyuki Nagatsuma ,  Akihito Hongo

发明人： Koji Ishida ,  Hiroyoshi Matsumura ,  Kenji Hiruma ,  Kazuyuki Nagatsuma ,  Akihito Hongo

IPC分类号： G02B6/00 ,  G02B6/02 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132

CPC分类号： G02B6/132 ,  G02B6/122

摘要： An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.

摘要翻译： 一种光波导，包括形成在基板上的层，其具有氧化硅和氮化硅的混合组成，并且具有范围在氧化硅和氮化硅的折射率之间的任意值。 所述混合组合物的层可以形成在基板上，以通过使用Si靶的溅射方法和控制由N 2和O 2气体的混合物组成的溅射气体的组成来容易地制造本发明的光波导。