摘要:
A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.
摘要:
3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.
摘要:
A transmission electron microscope has a camera system that is linked to the optical lens system of the electron microscope by linking the number of electron beam scanning lines of the camera system with the zoom function of the optical lens system. Thus, the number of scanning lines increases as the magnification of the transferred image decreases. Further, the specimen under observation is photographed with a constant number of pixels at all times regardless of the magnification of the transferred image by the optical lens system, thus preventing a reduction in the amount of specimen information.
摘要:
3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film. Avalanche multiplication in the photoconductive-film amplifies the signal of these photons at so high signal-to-noise ratio that the electron microscope in this invention can detect such weak electrons as emitted at high angle from the specimen at high sensitivity and resolution. Therefore this invention enables a scanning transmission electron microscope to obtain for example 3-dimensional image of point defects and impurity elements existing in joint interfaces and contacts in a ULSI device rapidly and accurately.
摘要:
A scintillator device and an image pickup apparatus using the scintillator, in which the scintillator for converting an input particle or electron beam image into an optical image is applied with a voltage between electrodes formed at the input plane of the electron beam and the output plane of scintillation. This voltage generates an electric field in the scintillator so that scattering of a charged particle beam in the scintillator is prevented and the resolution and S/N ratio can be improved while retaining a large amount of scintillation. Accordingly, the shift amount of low energy charged particle beams from the incident axis, which greatly influences degradation of the resolution and S/N ratio, can be suppressed.
摘要:
A scanning transmission electron microscope including an electron detection system having a scattering angle limiting aperture (for the inner angle) and a scattering angle limiting aperture (for the outer angle) between a specimen and an electron detector (comprising a scintillator and a light guide) and only one electron detector is installed.
摘要:
Below 50-nm-diameter extremely narrow electrically-conductive fiber is used instead of the electron beam biprism used in the conventional interference electron microscope method. A phenomenon is utilized where a focus-shifted shadow of this fiber is shifted from a straight line by a distance which is proportional to a differentiation of phase change amount of an electron beam due to a sample with respect to a direction perpendicular to the fiber. The phase change amount is quantified by calibrating this shift amount through its comparison with a shift amount caused by another sample in terms of which the corresponding phase change amount has been quantitatively evaluated in advance. The differentiation amount of the quantified phase change in the electron beam due to the sample is visualized, or eventually, is integrated thereby being transformed into absolute phase change amount to be visualized.
摘要:
The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) Detection efficiency of electron beams is low. The invention provides a scanning interference electron microscope which is improved in detection efficiency of electron beam interference fringes, and enables the user to observe electric and magnetic information easily in a micro domain of a specimen as a scan image of a high S/N ratio under optimum conditions.
摘要:
A scanning transmission electron microscope for scanning a primary electron beam on a sample, detecting a transmitted electron from the sample by a detector, and forming an image of the transmitted electron. The scanning transmission electron microscope includes an electron-optics system which enables switching back the transmitted electron beam to the optical axis by a predetermined quantity, and a determining unit for determining the quantity based on a displacement of the transmitted electron with respect to the detector caused by the scanning of the primary electron beam.
摘要:
An electric charged particle beam microscope measures a geometric distortion at an arbitrary magnification with high precision, and corrects the geometric distortion. A geometric distortion at a first magnification is measured as an absolute distortion based on a standard specimen having a cyclic structure. A microscopic structure specimen is photographed at a geometric distortion measured first magnification and at a geometric distortion unmeasured second magnification. The image at the first magnification is equally transformed to the second magnification to generate a scaled image. The geometric distortion at the second magnification is measured as a relative distortion based on the scaled image. The absolute distortion at the second magnification is obtained on the basis of the absolute distortion at the first magnification and the relative distortion at the second magnification. Subsequently, the second magnification is replaced with the first magnification, and the relative distortion measurement is repeated.