公开(公告)号：US20110143463A1

公开(公告)日：2011-06-16

申请号：US12875835

申请日：2010-09-03

Applicant: Yoshiyuki HARADA ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

Inventor： Yoshiyuki HARADA ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L21/66 ,  C23C16/00 ,  C23C16/34

CPC classification number: C23C16/45504 ,  C23C16/303 ,  C23C16/45574 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

Abstract translation: 根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。 该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层， 来自第二出口的原料气体。 该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

公开(公告)号：US20110019707A1

公开(公告)日：2011-01-27

申请号：US12719484

申请日：2010-03-08

Applicant: Takahiro SATO ,  Iwao Mitsuishi ,  Shinya Nunoue

Inventor： Takahiro SATO ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC: H01S5/323 ,  H01L33/50 ,  H01L33/52

CPC classification number: H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion.

Abstract translation: 一种发光器件，包括：发光源的光源; 第一波长转换部分，用于吸收源光并发射具有不同于源光波长的波长的第一光; 光传输部分，设置在与光源相反的第一波长转换部分的相对侧并且被配置为透射源光和第一光; 以及第二波长转换部，其设置在所述透光部的与所述第一波长转换部的相反侧，并且被配置为吸收所述源光和所述第一光中的至少一个，以发射具有与所述第二波长的波长不同的波长的第二光 源光并且也不同于第一光的波长。 源光的一部分被配置为被带到发光器件的外部，而不通过第一波长转换部分和第二波长转换部分中的至少一个。

公开(公告)号：US07863637B2

公开(公告)日：2011-01-04

申请号：US12037358

申请日：2008-02-26

Applicant: Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

Inventor： Hajime Nago ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC: H01L33/00

CPC classification number: H01L33/32 ,  F21K9/00 ,  H01L27/156 ,  H01L33/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

Abstract translation: 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

公开(公告)号：US20080246049A1

公开(公告)日：2008-10-09

申请号：US10574850

申请日：2006-02-21

Applicant: Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

Inventor： Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC: H01L33/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

Abstract: A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

Abstract translation: 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US6064079A

公开(公告)日：2000-05-16

申请号：US115239

申请日：1998-07-14

Applicant: Masahiro Yamamoto ,  Shinya Nunoue ,  Katsunobu Sasanuma ,  Masayuki Ishikawa

Inventor： Masahiro Yamamoto ,  Shinya Nunoue ,  Katsunobu Sasanuma ,  Masayuki Ishikawa

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00 ,  H01S3/19

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/305 ,  H01L33/145 ,  H01S5/3063 ,  H01S5/34333

Abstract: Disclosed is a gallium nitride-based compound semiconductor device, including a laminate film consisting of a plurality of layers stacked one upon the other to form a pn-junction and formed of InGaAlN. The semiconductor device also includes an n-side electrode and a p-side electrode to supply current to the pn-junction. Further included is a heat generation structure formed within the laminate film. The heat generation structure includes a low resistivity portion having a relatively low resistivity and a high resistivity portion having a relatively high resistivity and positioned adjacent to the low resistivity portion. The low resistivity portion and the high resistivity portion are formed within a single layer, differ from each other in carrier concentration, and formed by introducing an impurity into the single layer in a different dose such that the low resistivity portion is positioned closer to the p-side electrode than the high resistivity portion.

Abstract translation: 公开了一种氮化镓基化合物半导体器件，其包括由多个层叠的多个层组成的叠层膜，以形成由InGaAlN形成的pn结。 半导体器件还包括n侧电极和p侧电极以向pn结提供电流。 还包括形成在层压膜内的发热结构。 发热结构包括具有较低电阻率的低电阻率部分和具有相对较高电阻率并且邻近低电阻率部分定位的高电阻率部分。 低电阻率部分和高电阻率部分形成在单层内，在载流子浓度上彼此不同，并且通过以不同的剂量将杂质引入单层而形成，使得低电阻率部分更靠近p 比电阻率高的部分。

公开(公告)号：US6015979A

公开(公告)日：2000-01-18

申请号：US143560

申请日：1998-08-28

Applicant: Lisa Sugiura ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Masaaki Onomura ,  Masahiro Yamamoto

Inventor： Lisa Sugiura ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Masaaki Onomura ,  Masahiro Yamamoto

IPC: H01L33/00 ,  H01L33/02 ,  H01L27/15 ,  H01L23/58 ,  H01L31/12 ,  H01L31/153

CPC classification number: H01L33/025 ,  H01L33/007

Abstract: Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.

Abstract translation: 氮化物系半导体元件包括第一层，形成在第一层上的掩模，并且具有多个开口部分，形成在掩模上的氮化物基化合物半导体层，所述氮化物基化合物半导体层包括具有穿线的第一区域 以这样的方式产生的位错，即在掩模中的多个开口部分的两个相邻的开口部分中的大致中间部分中，多个位错在垂直方向上延伸到掩模的表面，第二区域包括部分 除了中间部分之外并且没有位错，以及形成在半导体层上的期望的元件结构。

公开(公告)号：US09412910B2

公开(公告)日：2016-08-09

申请号：US13030453

申请日：2011-02-18

Applicant: Toshihide Ito ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Toshihide Ito ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/42 ,  H01L33/44

CPC classification number: H01L33/44 ,  H01L33/42 ,  H01L2933/0016

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.

Abstract translation: 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光部分，第一透明导电层和第二透明导电层。 发光部分设置在第一和第二半导体层之间。 第二半导体层设置在第一透明导电层和发光部之间。 第一透明导电层包括氧。 第二透明导电层设置在第二半导体层和第一透明导电层之间。 第二透明导电层的折射率高于第一透明导电层的折射率，并且包括浓度高于第一透明导电层中包含的氧浓度的氧。

公开(公告)号：US09397167B2

公开(公告)日：2016-07-19

申请号：US13729713

申请日：2012-12-28

Applicant: Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778 ,  H01L29/06 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L29/2003 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0649 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/12

Abstract: A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.

Abstract translation: 氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。 硅衬底具有主表面。 堆叠的多层单元设置在主表面上。 堆叠的多层单元包括N个缓冲层。 缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。 第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。 第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。 对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。 含硅单元设置在堆叠的多层单元上。 上层单元设置在含硅单元上。

公开(公告)号：US09349590B2

公开(公告)日：2016-05-24

申请号：US13604183

申请日：2012-09-05

Applicant: Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

Abstract translation: 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US09324917B2

公开(公告)日：2016-04-26

申请号：US13601520

申请日：2012-08-31

Applicant: Hiroshi Katsuno ,  Satoshi Mitsugi ,  Shinya Nunoue

Inventor： Hiroshi Katsuno ,  Satoshi Mitsugi ,  Shinya Nunoue

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/20 ,  H01L33/58 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/58

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，焊盘，窄线电极和第一绝缘层。 发光层设置在第一半导体层和第二半导体层之间并且与第一半导体层接触。 窄线电极包括第一部分和第二部分。 第一部分设置在不与发光层接触的第一半导体层的表面上，并与第一半导体层欧姆接触。 第二部分设置在表面上并且位于第一部分和接合焊盘之间。 窄线电极电连接到接合焊盘。 第一绝缘层设置在第二部分和第一半导体层之间。