Patent search ap:("Applied Materials Page Inc.") AND inv:"Xinglong Chen"

51.

发明授权
Dry-etch selectivity 有权

公开(公告)号：US09384997B2

公开(公告)日：2016-07-05

申请号：US14602835

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： He Ren , Jang-Gyoo Yang , Jonghoon Baek , Anchuan Wang , Soonam Park , Saurabh Garg , Xinglong Chen , Nitin K. Ingle

IPC: H01L21/302 , H01L21/311 , H01J37/32

CPC classification number: H01L21/31116 , H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

52.

发明授权
Pedestal with multi-zone temperature control and multiple purge capabilities 有权
Title translation: 基座具有多区域温度控制和多次清洗功能

公开(公告)号：US09267739B2

公开(公告)日：2016-02-23

申请号：US13723516

申请日：2012-12-21

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen , Jang-Gyoo Yang , Alexander Tam , Elisha Tam

IPC: F28D15/00 , H01L21/67

CPC classification number: H01L21/67103 , F28D15/00 , H01L21/67109

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Abstract translation: 对半导体处理装置的基板支撑组件进行说明。组件可以包括底座和与底座联接的杆。基座可以被配置成提供具有独立控制的温度的多个区域。每个区域可以包括流体通道，以通过循环从杆中的内部通道接收的温度控制的流体来在区域内提供基本均匀的温度控制。流体通道可以包括以平行逆流装置构造的多个部分。基座还可以包括可被配置为在基座的区域之间提供热隔离的流体吹扫通道。

53.

发明申请
PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING 审中-公开

公开(公告)号：US20150332930A1

公开(公告)日：2015-11-19

申请号：US14808904

申请日：2015-07-24

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur

IPC: H01L21/3065 , H01L21/02 , H01L21/3105 , H01L21/268 , H01L21/311 , H01L21/3213

CPC classification number: H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

54.

发明授权
Processing systems and methods for halide scavenging 有权

公开(公告)号：US09153442B2

公开(公告)日：2015-10-06

申请号：US14248143

申请日：2014-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur

IPC: H01L21/263 , H01L21/67 , H01L21/02 , H01L21/677 , H01L21/306 , H01L21/3065 , H01L21/683 , H01J37/32 , H01L21/3213 , H01L21/311

CPC classification number: H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

55.

发明授权
Chemical control features in wafer process equipment 有权
Title translation: 晶圆加工设备的化学控制特性

公开(公告)号：US09132436B2

公开(公告)日：2015-09-15

申请号：US13799840

申请日：2013-03-13

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang , Xinglong Chen , Kien Chuc , Dmitry Lubomirsky , Soonam Park , Jang-Gyoo Yang , Shankar Venkataraman , Toan Tran , Kimberly Hinckley , Saurabh Garg

IPC: C23C16/455 , C23F1/00 , H01L21/306 , B05B1/00 , C23C16/452 , H01J37/32 , C23C16/06 , C23C16/22

CPC classification number: H01J37/32449 , B05B1/005 , B05B1/18 , C23C16/452 , C23C16/455 , C23C16/45561 , C23C16/45565 , C23C16/45574 , C23C16/45582 , C23C16/50 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32568 , H01J2237/002 , H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。

56.

发明授权
Processing systems and methods for halide scavenging 有权

公开(公告)号：US09093371B2

公开(公告)日：2015-07-28

申请号：US14246978

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang , Xinglong Chen , Zihui Li , Hiroshi Hamana , Zhijun Chen , Ching-Mei Hsu , Jiayin Huang , Nitin K. Ingle , Dmitry Lubomirsky , Shankar Venkataraman , Randhir Thakur

IPC: B08B3/12 , B08B6/00 , H01L21/302 , H01L21/461 , H01L21/263 , H01L21/02 , H01L21/677 , H01L21/306 , H01L21/3065 , H01L21/67 , H01L21/683 , H01J37/32 , H01L21/3213 , H01L21/311

CPC classification number: H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

57.

发明授权
Dry-etch selectivity 有权
Title translation: 干蚀刻选择性

公开(公告)号：US08969212B2

公开(公告)日：2015-03-03

申请号：US13834206

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： He Ren , Jang-Gyoo Yang , Jonghoon Baek , Anchuan Wang , Soonam Park , Saurabh Garg , Xinglong Chen , Nitin K. Ingle

IPC: H01L21/302 , H01L21/311 , H01J37/32

CPC classification number: H01L21/31116 , H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。等离子体功率是脉冲的，而不是连续地保持。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已经被发现抑制了到达衬底的离子充电物质的数量。蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。