公开(公告)号：US10315995B2

公开(公告)日：2019-06-11

申请号：US15407369

申请日：2017-01-17

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C07C211/55 ,  C07D213/38 ,  C07F7/00 ,  C07D207/335 ,  C07D213/36 ,  C23C16/18 ,  C23C16/455 ,  C07F1/00 ,  C07F1/08 ,  C07F5/02 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  C07C211/13 ,  C07C211/54 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US10115593B2

公开(公告)日：2018-10-30

申请号：US15833728

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： David Knapp ,  Simon Huang ,  Jeffrey W. Anthis ,  Philip Alan Kraus ,  David Thompson

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/02 ,  B82Y30/00 ,  C08K3/04

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

公开(公告)号：US20180155379A1

公开(公告)日：2018-06-07

申请号：US15831621

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: C07F15/0053 ,  C07F15/0046 ,  C23C16/18 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US09721787B2

公开(公告)日：2017-08-01

申请号：US13713578

申请日：2012-12-13

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/507 ,  C23C16/511 ,  H01L21/3205

CPC classification number: H01L21/02271 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/507 ,  C23C16/511 ,  H01L21/32051

Abstract: Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaClxR5-x, TaBrxR5-x or TaIxR5-x, wherein R is a non-halide ligand, and a second precursor comprising an aluminum-containing compound, wherein x has a value in the range of 1 to 4. The R group may be C1-C5 alkyl, and specifically methyl. The resulting films comprise tantalum, aluminum and/or carbon. Certain other methods relate to reacting Ta2Cl10 with a coordinating ligand to provide TaCl5 coordinated to the ligand. A substrate surface may be exposed to flows of a first precursor and second precursor, the first precursor comprising the TaCl5 coordinated to a ligand, the second precursor comprising an aluminum-containing compound.

公开(公告)号：US20170213726A1

公开(公告)日：2017-07-27

申请号：US15413956

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02208 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.

公开(公告)号：US20170121287A1

公开(公告)日：2017-05-04

申请号：US15407369

申请日：2017-01-17

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07D213/38 ,  C07F7/28 ,  C07F11/00 ,  C07F7/00 ,  C07F9/00 ,  C07F15/00 ,  C07F1/00 ,  C07F13/00 ,  C07F1/08 ,  C07D207/335 ,  C07C211/13 ,  C07C211/54 ,  C07F5/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/50 ,  C07F5/06

CPC classification number: C07D213/38 ,  C07C211/13 ,  C07C211/54 ,  C07D207/335 ,  C07D213/36 ,  C07F1/00 ,  C07F1/005 ,  C07F1/08 ,  C07F5/022 ,  C07F5/069 ,  C07F7/003 ,  C07F7/28 ,  C07F9/005 ,  C07F11/005 ,  C07F13/005 ,  C07F15/004 ,  C07F15/0053 ,  C07F15/0066 ,  C07F15/008 ,  C07F15/0093 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US20160336222A1

公开(公告)日：2016-11-17

申请号：US15151612

申请日：2016-05-11

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Jeffrey W. Anthis ,  Xinyu Fu ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/76876 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53266

Abstract: Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

Abstract translation: 处理方法包括将基底暴露于成核促进剂，随后顺次暴露包含含金属化合物和第二反应气体的第一反应气体，以在基材上形成含金属膜。

公开(公告)号：US09472417B2

公开(公告)日：2016-10-18

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

公开(公告)号：US09328415B2

公开(公告)日：2016-05-03

申请号：US14296897

申请日：2014-06-05

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: C23C16/18 ,  C23C16/06 ,  C23C16/455 ,  C23C16/34 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

CPC classification number: C23C16/18 ,  C23C16/34 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine.

Abstract translation: 提供方法和前体用于使用包含基于二氮杂二丁烯的配体的金属配位络合物将包含锰的膜沉积在表面上。 某些方法包括将基底表面暴露于锰前体，并将基底表面暴露于叔胺。

公开(公告)号：US12261049B2

公开(公告)日：2025-03-25

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.