公开(公告)号：US20210022105A1

公开(公告)日：2021-01-21

申请号：US17061032

申请日：2020-10-01

申请人： Zhibin Yu ,  Rui Huang ,  Andrey Chervyakov ,  Alexey Khoryaev ,  Qiming Li

发明人： Zhibin Yu ,  Rui Huang ,  Andrey Chervyakov ,  Alexey Khoryaev ,  Qiming Li

IPC分类号： H04W64/00 ,  G01S5/10 ,  G01S1/20

摘要： An apparatus for use in a UE includes processing circuitry coupled to a memory. To configure the UE for Reference Signal Time Difference (RSTD)-based 5G-NR positioning. The processing circuitry is to determine a first PRS BW associated with a first PRS received from a first gNB associated with a first cell. A second PRS BW is determined, which is associated with a second PRS received from a second gNB of a second cell. An RSTD report resolution is determined based on the first PRS BW and the second PRS BW. A receive (Rx) timing difference between the first cell and the second cell is measured based on reception times of the first PRS and the second PRS. The measured Rx timing difference is mapped into an RSTD report for transmission to the first gNB, based on the RSTD report resolution.

公开(公告)号：US09743289B2

公开(公告)日：2017-08-22

申请号：US14583263

申请日：2014-12-26

申请人： Candy Yiu ,  Yang Tang ,  Rui Huang

发明人： Candy Yiu ,  Yang Tang ,  Rui Huang

IPC分类号： H04W24/02 ,  H04W72/10 ,  H04W72/04 ,  H04W72/02

CPC分类号： H04W24/02 ,  H04W36/0083 ,  H04W72/02 ,  H04W72/0426 ,  H04W72/10

摘要： Systems and methods for prioritizing inter-frequency measurement are disclosed herein. User equipment (UE) may be configured to communicatively couple to an Evolved Universal Terrestrial Radio Access Network (E-UTRAN) Node B (eNB). The eNB may determine a priority for performing each of a plurality of inter-frequency measurement. The eNB may indicate the priority of each measurement to the UE. The eNB may transmit lists of higher priority and lower priority measurement objects. The lists may be separate and/or concatenated. Alternatively, or in addition, each measurement object may include a priority indicator, or the priority may be determined from the type of measurement object. In some embodiments, the eNB may provide indications of normal priority and low priority measurement objects and/or indications of normal priority and high priority measurement objects. The UE may perform measurements according to the indicated priorities.

公开(公告)号：US09252172B2

公开(公告)日：2016-02-02

申请号：US13149628

申请日：2011-05-31

申请人： Seng Guan Chow ,  Lee Sun Lim ,  Rui Huang ,  Xusheng Bao ,  Ma Phoo Pwint Hlaing

发明人： Seng Guan Chow ,  Lee Sun Lim ,  Rui Huang ,  Xusheng Bao ,  Ma Phoo Pwint Hlaing

IPC分类号： H01L31/0203 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L27/1469 ,  B81C1/0023 ,  H01L21/76898 ,  H01L25/165 ,  H01L25/167 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device has a substrate containing a transparent or translucent material. A spacer is mounted to the substrate. A first semiconductor die has an active region and first conductive vias electrically connected to the active region. The active region can include a sensor responsive to light received through the substrate. The first die is mounted to the spacer with the active region positioned over an opening in the spacer and oriented toward the substrate. An encapsulant is deposited over the first die and substrate. An interconnect structure is formed over the encapsulant and first die. The interconnect structure is electrically connected through the first conductive vias to the active region. A second semiconductor die having second conductive vias can be mounted to the first die with the first conductive vias electrically connected to the second conductive vias.

摘要翻译： 半导体器件具有含有透明或半透明材料的衬底。 衬垫安装到衬底上。 第一半导体管芯具有有源区和电连接到有源区的第一导电通孔。 有源区域可以包括响应于通过衬底接收的光的传感器。 第一管芯安装到间隔件上，其中有源区域位于间隔件中的开口上方并朝向衬底。 密封剂沉积在第一裸片和衬底上。 在密封剂和第一模具上形成互连结构。 互连结构通过第一导电通孔电连接到有源区。 具有第二导电通孔的第二半导体管芯可以被安装到第一管芯，其中第一导电通孔电连接到第二导电通孔。

公开(公告)号：US20150189458A1

公开(公告)日：2015-07-02

申请号：US13997240

申请日：2012-05-03

申请人： Honggang Li ,  Rui Huang

发明人： Honggang Li ,  Rui Huang

IPC分类号： H04W4/00 ,  H04L29/08 ,  H04W72/04

CPC分类号： H04W4/005 ,  H04L5/0039 ,  H04L67/12 ,  H04W4/70 ,  H04W56/004 ,  H04W72/0446 ,  H04W72/048

摘要： A delegate-based group channel access method is disclosed for machine-to-machine (M2M) communication. The delegate-based group channel access method groups M2M devices having common characteristics together, assigns a single delegate or multiple delegates from the group according to some criteria, and uses the assigned delegate to perform channel access. This method avoids unnecessary peer-to-peer communication between M2M devices reduces the probability of collision on the channel during initial channel access, and reduces the control signaling overhead. The, delegate-based group channel access method also coordinates the number of slots to backoff so that all M2M devices in the group keep pace with the delegate.

摘要翻译： 公开了一种基于代理的组通道访问方法，用于机对机（M2M）通信。 基于代表的组信道接入方法将具有共同特征的M2M设备组合在一起，根据一些标准从组分配单个委托或多个代表，并使用分配的委托来执行信道接入。 该方法避免了M2M设备之间不必要的对等通信，降低了初始信道接入时信道上的冲突概率，降低了控制信令开销。 基于代表的组通道访问方法还协调插槽的次数以进行退避，使组内的所有M2M设备与代理保持同步。

公开(公告)号：US20140205534A1

公开(公告)日：2014-07-24

申请号：US14130354

申请日：2012-06-29

申请人： Ren Zhou ,  Rui Huang

发明人： Ren Zhou ,  Rui Huang

IPC分类号： C01B17/76

CPC分类号： C01B17/76 ,  C01B17/508 ,  C01B17/806 ,  F28D7/1623 ,  F28D2021/0022 ,  F28F9/10 ,  F28F19/002 ,  F28F19/04 ,  F28F21/006 ,  F28F2230/00 ,  F28F2265/26

摘要： Provided is a method for preparing sulfuric acid by using hydrogen sulfide. The method comprises the following steps: (1) performing a reduction-oxidation reaction between an H2S feed gas and oxygen comprised in an oxygen-rich air to prepare SO2, controlling residual oxygen after the reduction-oxidation reaction step at a molar percentage of ≧2%; (2) cooling the product acquired in step (1) to a temperature between 390° C. and 430° C., and then performing a catalyzed oxidation reaction with oxygen, wherein the catalyzed oxidation reaction is performed in stages until the conversion rate of SO2 is ≧98.7% or the outlet concentration of SO2 is ≦550 mg/Nm3; and (3) cooling the product acquired in step (2) to a temperature ≧10° C. over the dew point temperature of H2SO4, then further cooling to a temperature between 60° C. and 120° C., collecting H2SO4 product, and subjecting the gas acquired after cooling to a coalescent separation before discharging directly into the atmosphere. Also provided is a heat exchanger, comprising a housing and several glass pipes, wherein the glass pipes are arranged within the housing along the direction of a long axis of the housing, arching between two lateral walls thereof, and used for circulating cooling medium; the adjacent glass pipes are connected head-to-tail, thereby forming at least one cooling medium flow path of unidirectional flow. The method for preparing sulfuric acid provides high removal efficiency of hydrogen sulfide, simple process flow, and allows for economic efficiency of apparatus and reasonable utilization of energy.

摘要翻译： 提供了通过使用硫化氢制备硫酸的方法。 该方法包括以下步骤：（1）在H2S进料气体和富氧空气中包含的氧气之间进行还原氧化反应以制备SO 2，在还原 - 氧化反应步骤之后控制残余氧以≧ 2％; （2）将步骤（1）中获得的产物冷却至390℃至430℃之间的温度，然后与氧气进行催化氧化反应，其中催化氧化反应分级进行直至转化率 SO2为≥98.7％，SO2出口浓度为“N”; 550mg / Nm3; 和（3）在H 2 SO 4的露点温度下将步骤（2）中获得的产物冷却至≥10℃的温度，然后进一步冷却至60℃至120℃的温度，收集H 2 SO 4产物， 并在冷却后获得的气体进行聚结分离，然后直接排放到大气中。 还提供了一种热交换器，其包括壳体和几个玻璃管，其中玻璃管沿壳体的长轴方向布置在壳体内，在其两个侧壁之间拱起并用于循环冷却介质; 相邻的玻璃管头对头连接，从而形成至少一个单向流动的冷却介质流动路径。 制备硫酸的方法提供了较高的硫化氢去除效率，工艺流程简单，并且能够提高设备的经济效益和合理利用能源。

公开(公告)号：US20130272196A1

公开(公告)日：2013-10-17

申请号：US13665715

申请日：2012-10-31

申请人： Honggang Li ,  Qinghua Li ,  Rui Huang ,  Jong-Kae Fwu ,  Yuan Zhu ,  Xiaogang Chen ,  Alexei Davydov

发明人： Honggang Li ,  Qinghua Li ,  Rui Huang ,  Jong-Kae Fwu ,  Yuan Zhu ,  Xiaogang Chen ,  Alexei Davydov

IPC分类号： H04W4/00

CPC分类号： H04W72/044 ,  H04W4/00 ,  H04W4/20 ,  H04W4/50

摘要： Systems and techniques for wireless device-to-device (D2D) communication are provided herein. A D2D group identifier may be included in wireless transmissions within D2D groups. D2D interference mitigation processes may be initiated when a D2D group identifier is detected by a wireless device outside the D2D group.

摘要翻译： 本文提供了无线设备到设备（D2D）通信的系统和技术。 在D2D组内的无线传输中可以包括D2D组标识符。 当D2D组外的无线设备检测到D2D组标识符时，可以启动D2D干扰抑制过程。

公开(公告)号：US20130265976A1

公开(公告)日：2013-10-10

申请号：US13994453

申请日：2012-03-27

申请人： Honggang Li ,  Rui Huang ,  Shantidev Mohanty

发明人： Honggang Li ,  Rui Huang ,  Shantidev Mohanty

IPC分类号： H04W28/20 ,  H04W76/02

CPC分类号： H04L5/0037 ,  H04W4/06 ,  H04W4/70 ,  H04W28/20 ,  H04W52/0216 ,  H04W52/0219 ,  H04W76/28 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/1264 ,  Y02D70/142 ,  Y02D70/144 ,  Y02D70/146 ,  Y02D70/164 ,  Y02D70/168 ,  Y02D70/21 ,  Y02D70/22

摘要： Embodiments of the invention include a fast network re-entry system that optimizes the network re-entry and bandwidth request process for wireless communications between a base station and a mobile or fixed station. In one embodiment a mobile station, in idle mode, transmits a single communication, including both control information and bandwidth request information, to a base station. The communication may proceed via an uncontested communication slot. Other embodiments are described herein.

摘要翻译： 本发明的实施例包括一种快速网络重入系统，其优化基站和移动或固定站之间的无线通信的网络重入和带宽请求过程。 在一个实施例中，处于空闲模式的移动台将包括控制信息和带宽请求信息两者的单个通信发送到基站。 通信可以通过无争议的通信时隙进行。 本文描述了其它实施例。

公开(公告)号：US20130184146A1

公开(公告)日：2013-07-18

申请号：US13814462

申请日：2011-06-13

申请人： Shi-gang Sun ,  Rui Huang ,  Sheng-pei Chen

发明人： Shi-gang Sun ,  Rui Huang ,  Sheng-pei Chen

IPC分类号： B01J37/34

CPC分类号： B01J37/348 ,  B01J21/18 ,  B01J21/185 ,  B01J23/42 ,  B01J23/44 ,  B01J23/462 ,  B01J23/464 ,  B01J23/468 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B01J35/0013 ,  B01J35/002 ,  B01J35/006 ,  B82Y30/00 ,  C25C5/02 ,  C25C7/00 ,  C25C7/06 ,  C25D1/006 ,  C25D1/04 ,  C25D3/50 ,  C25D5/18 ,  C25D17/00 ,  C25D17/02

摘要： The present disclosure relates to a surface structure control and preparation process for a metal nanocatalyst involving a metal nanocatalyst. The present disclosure provides a surface structure control and continuous preparation system for a metal nanocatalyst, a metal nanocatalyst having an open surface structure and high surface energy, and a surface structure control and a preparation process thereof. The system is provided with a nucleation electrolytic cell, a distribution valve, at least two growth electrolytic cells, with two ends of the distribution valve being connected to an output port of the nucleation electrolytic cell and to input port of all the growth electrolytic cells, respectively. The metal nanocatalyst having an open surface structure is a single metal nanoscale crystal and has a high density of terrace atoms or active sites on the surface thereof. The precursor reaction solution is injected into the nucleation electrolytic cell, and a nucleation programmed potential is applied to one pair of electrodes in the nucleation electrolytic cell to obtain a nucleation reaction solution having the metal crystal nucleus formed, which is conveyed to the growth electrolytic cell through the distribution valve, a growth programmed potential is applied to one pair of electrodes in the growth electrolytic cell to obtain a metal nanoscale crystal having an open surface structure; controlling the growth time to obtain a reaction solution, and collecting a product by centrifugation.

摘要翻译： 本公开内容涉及涉及金属纳米催化剂的金属纳米催化剂的表面结构控制和制备方法。 本公开内容提供了一种用于金属纳米催化剂的表面结构控制和连续制备系统，具有开放表面结构和高表面能的金属纳米催化剂，以及表面结构控制及其制备方法。 该系统设置有成核电解池，分配阀，至少两个生长电解池，分配阀的两端连接到成核电解槽的输出端口和所有生长电解槽的输入口， 分别。 具有开放表面结构的金属纳米催化剂是单金属纳米级晶体，并且在其表面上具有高密度的平台原子或活性位点。 将前体反应溶液注入到成核电解槽中，并将成核程序电位施加到成核电解槽中的一对电极上，得到形成有金属晶核的成核反应溶液，将其输送至生长电解槽 通过分配阀，将生长编程电位施加到生长电解槽中的一对电极上，得到具有开放表面结构的金属纳米级晶体; 控制生长时间以获得反应溶液，并通过离心收集产物。

公开(公告)号：US08476120B2

公开(公告)日：2013-07-02

申请号：US13421770

申请日：2012-03-15

申请人： Rui Huang ,  Heap Hoe Kuan ,  Yaojian Lin ,  Seng Guan Chow

发明人： Rui Huang ,  Heap Hoe Kuan ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/02 ,  H01L23/02 ,  H01L23/28

CPC分类号： H01L23/3128 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5389 ,  H01L23/642 ,  H01L24/24 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device includes conductive pillars disposed vertically over a seed layer, a conformal insulating layer formed over the conductive pillars, and a conformal conductive layer formed over the conformal insulating layer. A first conductive pillar, the conformal insulating layer, and the conformal conductive layer constitute a vertically oriented integrated capacitor. The semiconductor device further includes a semiconductor die or component mounted over the seed layer, an encapsulant deposited over the semiconductor die or component and around the conformal conductive layer, and a first interconnect structure formed over a first side of the encapsulant. The first interconnect structure is electrically connected to a second conductive pillar, and includes an integrated passive device. The semiconductor device further includes a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.

摘要翻译： 半导体器件包括垂直设置在种子层上的导电柱，形成在导电柱上的保形绝缘层，以及形成在保形绝缘层上的共形导电层。 第一导电柱，保形绝缘层和共形导电层构成垂直取向的集成电容器。 半导体器件还包括安装在种子层上的半导体管芯或部件，沉积在半导体管芯或部件上并围绕保形导电层的密封剂，以及形成在密封剂的第一侧上的第一互连结构。 第一互连结构电连接到第二导电柱，并且包括集成的无源器件。 所述半导体器件还包括形成在所述密封剂的与密封剂的第一侧相对的第二侧上的第二互连结构。

公开(公告)号：US20130069241A1

公开(公告)日：2013-03-21

申请号：US13236952

申请日：2011-09-20

申请人： Yaojian Lin ,  Rui Huang ,  Heap Hoe Kuan ,  Seng Guan Chow

发明人： Yaojian Lin ,  Rui Huang ,  Heap Hoe Kuan ,  Seng Guan Chow

IPC分类号： H01L21/60 ,  H01L21/56 ,  H01L23/48

CPC分类号： H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/82385 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/92247 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/0665 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first insulating layer formed over a carrier. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer. Vias are formed through the second insulating layer. A second conductive layer is formed over the second insulating layer and extends into the vias. A semiconductor die is mounted to the second conductive layer. A bond wire is formed between a contact pad on the semiconductor die and the second conductive layer. The second conductive layer extends to a mounting site of the semiconductor die to minimize the bond wire span. An encapsulant is deposited over the semiconductor die. A portion of the first insulating layer is removed to expose the second conductive layer. A portion of the first conductive layer is removed to electrically isolate remaining portions of the first conductive layer.

摘要翻译： 半导体器件具有形成在载体上的第一绝缘层。 在第一绝缘层上形成第一导电层。 在第一导电层上形成第二绝缘层。 通过第二绝缘层形成通孔。 第二导电层形成在第二绝缘层上并延伸到通孔中。 半导体管芯安装到第二导电层。 在半导体管芯上的接触焊盘和第二导电层之间形成接合线。 第二导电层延伸到半导体管芯的安装位置，以使接合线跨距最小化。 密封剂沉积在半导体管芯上。 去除第一绝缘层的一部分以露出第二导电层。 去除第一导电层的一部分以电隔离第一导电层的剩余部分。