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51.发明申请METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al,In,Ga)N/Al(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES 审中-公开在氮化物发光二极管中使用（Al，In，Ga）N / Al（x）In（1-x）In（1-x）N超导电子阻挡层降低效率的方法公开(公告)号：US20120138891A1
公开(公告)日：2012-06-07
申请号：US13282794
申请日：2011-10-27
IPC分类号： H01L33/04
摘要： A method for reduction of efficiency droop using an (Al, In, Ga)N/AlxIn1-xN superlattice electron blocking layer (SL-EBL) in nitride based light emitting diodes.
摘要翻译： 在氮化物基发光二极管中使用（Al，In，Ga）N / Al x In 1-x N超晶格电子阻挡层（SL-EBL）降低效率下降的方法。
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公开(公告)号：US08148713B2
公开(公告)日：2012-04-03
申请号：US12419119
申请日：2009-04-06
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/02 , H01L33/08 , Y10S977/755
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
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53.发明授权Method for increasing the area of non-polar and semi-polar nitride substrates 有权增加非极性和半极性氮化物衬底面积的方法公开(公告)号：US08080469B2
公开(公告)日：2011-12-20
申请号：US12234340
申请日：2008-09-19
IPC分类号： H01L21/28
CPC分类号： C30B33/00 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003
摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。
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54.发明授权Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation 有权通过增加铟掺入增强氮化物发光二极管的光学偏振公开(公告)号：US08044417B2
公开(公告)日：2011-10-25
申请号：US12364258
申请日：2009-02-02
申请人： Hisashi Masui , Hisashi Yamada , Kenji Iso , James S. Speck , Shuji Nakamura , Steven P. DenBaars
发明人： Hisashi Masui , Hisashi Yamada , Kenji Iso , James S. Speck , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/00
摘要： An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
摘要翻译： 在非极性III族氮化物衬底上制备的发光二极管（LED）结构的发光层中的铟（In）含量的增加导致与含有较少In含量的LED结构相比较高的发光极化比。 在470nm以上的波长下，极化率应高于0.7。
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55.发明申请ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES 有权二氧化氮玻璃氮化物阻挡层和单独配置结构（SCH）层用于半平面三氮化硅半导体发光二极管和激光二极管公开(公告)号：US20110243172A1
公开(公告)日：2011-10-06
申请号：US13080260
申请日：2011-04-05
申请人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/3063 , H01S5/3202 , H01S5/3406 , H01S5/342 , H01S2304/04
摘要： A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
摘要翻译： 一种半极性III族氮化物半导体激光二极管或发光二极管，其包含含有多个用于发光的量子阱的半极性铟，其具有含铝的量子阱屏障，其中含有多量子阱和含铝屏障的铟在 在半极性平面上的半极性取向。
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56.发明申请ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制公开(公告)号：US20110062415A1
公开(公告)日：2011-03-17
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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57.发明申请THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-BLOCKING LAYER FREE GALLIUM NITRIDE-BASED LIGHT EMITTING DIODES 失效薄型P型氮化铝和铝氮化镓电子封装层免费基于氮化镓的发光二极管公开(公告)号：US20110037085A1
公开(公告)日：2011-02-17
申请号：US12611063
申请日：2009-11-02
申请人： Hong Zhong , Anurag Tyagi , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , James S. Speck , Steven P. DenBaars , Shuji Nakamura
摘要： A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
摘要翻译： 具有厚度为100nm以下的p型层的发光二极管（LED），位于p型层和n型层之间的n型层和有源层，用于发光 ，其中LED不包括单独的电子阻挡层。
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58.发明授权公开(公告)号：US07858996B2
公开(公告)日：2010-12-28
申请号：US11676999
申请日：2007-02-20
申请人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译： 一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。 本发明还公开了一种制造分面表面的方法。 一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。 另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。 分面表面通常是半极性平面。
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59.发明申请GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME 审中-公开具有改性晶体质量的III族氮化物单晶在其背面种子晶体及其生产方法公开(公告)号：US20100111808A1
公开(公告)日：2010-05-06
申请号：US12612477
申请日：2009-11-04
申请人： Siddha Pimputkar , Derrick S. Kamber , Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Siddha Pimputkar , Derrick S. Kamber , Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： C30B29/403 , C30B7/105
摘要： The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.
摘要翻译： 本发明提供一种用于生长III族氮化物晶体的方法，其中III族氮化物晶体生长发生在蚀刻晶种上。 在生长之前使用温度分布来制造蚀刻的种子，该温度曲线与源材料区相比在晶种区产生III族氮化物材料的高溶解度。 所获得的晶体的测量的X射线衍射与在生长之前晶种表面没有回蚀而生长的晶体相比，具有显着窄的半峰全宽。
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60.发明申请OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS 有权基于非极性和半极性铝氮化铟和氮化铝氮化镓合金的光电器件公开(公告)号：US20100108985A1
公开(公告)日：2010-05-06
申请号：US12610945
申请日：2009-11-02
申请人： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/34333
摘要： A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
摘要翻译： 制造了发射波长（λpeak）范围从280nm到360nm的大功率和高效率发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。
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