公开(公告)号：US20090093132A1

公开(公告)日：2009-04-09

申请号：US11869416

申请日：2007-10-09

申请人： HUIWEN XU ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： HUIWEN XU ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

摘要： The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

摘要翻译： 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

公开(公告)号：US20050202683A1

公开(公告)日：2005-09-15

申请号：US10799146

申请日：2004-03-12

申请人： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

发明人： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

IPC分类号： H01L21/469

CPC分类号： G03F7/094 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/7684

摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

摘要翻译： 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层 并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义 层。 无定形碳层可用作蚀刻停止层，抗反射涂层或两者。

公开(公告)号：US06853043B2

公开(公告)日：2005-02-08

申请号：US10288123

申请日：2002-11-04

申请人： Wendy H. Yeh ,  Sang Ahn ,  Christopher Dennis Bencher ,  Hichem M'Saad ,  Sudha Rathi

发明人： Wendy H. Yeh ,  Sang Ahn ,  Christopher Dennis Bencher ,  Hichem M'Saad ,  Sudha Rathi

IPC分类号： C03C17/22 ,  C23C16/30 ,  H01L21/768 ,  H01L31/0232

CPC分类号： H01L21/76811 ,  C03C17/22 ,  C03C2217/213 ,  C03C2217/282 ,  C23C16/30 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76813

摘要： A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.

摘要翻译： 用于光刻处理的一层抗反射涂层（ARC）材料。 在一个实施方案中，ARC材料具有式SiwO x H y：Cz，其中w，x，y和z分别表示材料中硅，氧，氢和碳的原子百分比，其中w在35和55之间，x是 在35和55之间，y在4和15之间，z在0和3之间，材料中氮的原子百分比小于或等于1原子％。

公开(公告)号：US07871926B2

公开(公告)日：2011-01-18

申请号：US11876649

申请日：2007-10-22

申请人： Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

发明人： Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/3185 ,  H01L21/31116 ,  H01L21/3143 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.

摘要翻译： 一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。 在至少一个特征上形成含氮介电层。 在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上 以第二速率被去除。 第一个比率大于第二个比率。 在含氮介电层上形成介电层。

公开(公告)号：US07501354B2

公开(公告)日：2009-03-10

申请号：US11233988

申请日：2005-09-09

申请人： Dustin W. Ho ,  Derek R. Witty ,  Helen R. Armer ,  Hichem M'Saad

发明人： Dustin W. Ho ,  Derek R. Witty ,  Helen R. Armer ,  Hichem M'Saad

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/76801 ,  C23C16/401 ,  C23C16/4405 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76828 ,  H01L2221/1047

摘要： Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

摘要翻译： 使用具有通过等离子体清洗容易从处理室除去的反应性副产物的材料沉积纳米多孔低介电常数膜。 根据一个实施方案，可氧化的含硅化合物与具有热不稳定基团的可氧化非硅组分在活性氧环境中和在等离子体存在下反应。 将沉积的氧化硅膜退火以形成留在纳米多孔硅中的分散的微观空隙或孔隙。 包括但不限于：柠檬烯，护甲，伞花烃，氟酮，乙酸乙烯酯，甲基丙烯酸甲酯，乙基乙烯基醚，四氢呋喃，呋喃，2 ，5降冰片二烯，环戊烯，环戊烯氧化物，甲基环戊烯，2-环戊烯-1-酮和1-丁烯。

公开(公告)号：US06413871B1

公开(公告)日：2002-07-02

申请号：US09337983

申请日：1999-06-22

申请人： Hichem M'Saad ,  Derek R. Witty ,  Manoj Vellaikal ,  Lin Zhang ,  Yaxin Wang

发明人： Hichem M'Saad ,  Derek R. Witty ,  Manoj Vellaikal ,  Lin Zhang ,  Yaxin Wang

IPC分类号： H01L213105

摘要： A film of fluorine-doped silicon glass (“FSG”) is exposed to a nitrogen-containing plasma to nitride a portion of the FSG film. In one embodiment, the FSG film is chemically-mechanically polished prior to nitriding. The nitriding process is believed to scavenge moisture and free fluorine from the FSG film. The plasma can heat the FSG film to about 400° C. for about one minute to incorporate about 0.4 atomic percent nitrogen to a depth of nearly a micron. Thus, the nitriding process can passivate the FSG film deeper than a via depth.

公开(公告)号：US07964442B2

公开(公告)日：2011-06-21

申请号：US11869416

申请日：2007-10-09

申请人： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L51/40

CPC分类号： H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

摘要： The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

摘要翻译： 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

公开(公告)号：US07790635B2

公开(公告)日：2010-09-07

申请号：US11610991

申请日：2006-12-14

申请人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02167 ,  H01L21/0206 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843

摘要： A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.

摘要翻译： 提供了形成压应力碳掺杂氮化硅层的方法。 该方法包括在其上形成起始层和本体层，其中本体层的压应力在约-0.1GPa和约-10GPa之间。 起始层由包含硅和含碳前体以及任选的氮和/或源的气体混合物沉积，但不包括氢气。 本体层由包含硅和碳的前体，氮源和氢气的气体混合物沉积。 引发层是允许体层的压应力通过其传递到诸如晶体管的通道的下层的薄层。

公开(公告)号：US07704816B2

公开(公告)日：2010-04-27

申请号：US12171783

申请日：2008-07-11

申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/336

CPC分类号： C23C16/28 ,  C23C16/56 ,  H01L21/314 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about −10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.

摘要翻译： 提供形成含硼膜的方法。 所述方法包括将含硼前体引入室中，并通过热分解或等离子体处理将包含硼 - 硼键的网络沉积在衬底上。 可以对网络进行后处理以从网络中除去氢，并增加所得含硼膜的应力。 含硼膜的应力在约-10GPa和10GPa之间，可用作硼源层或应变诱导层。

公开(公告)号：US07611996B2

公开(公告)日：2009-11-03

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。