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    ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES
    55.
    发明申请
    ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES 有权
    NANO电子器件的高级低k封膜成膜工艺

    公开(公告)号：US20090179306A1

    公开(公告)日：2009-07-16

    申请号：US11972175

    申请日：2008-01-10

    申请人： Alfred Grill ,  Joshua L. Herman ,  Son Nguyen ,  E. Todd Ryan ,  Hosadurga K. Shobha

    发明人： Alfred Grill ,  Joshua L. Herman ,  Son Nguyen ,  E. Todd Ryan ,  Hosadurga K. Shobha

    IPC分类号： H01L21/768 ,  H01L23/58 ,  H01L23/52

    CPC分类号： H01L21/02263 ,  C23C16/325 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

    摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.

    摘要翻译： 提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。 在一些实施例中，电介质膜可以任选地包括氮。 当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。 富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。 本发明的电介质膜对UV固化具有很强的鲁棒性，并且在UV固化后保持压缩应力。 此外，本发明的电介质膜具有良好的抗氧化性，并且防止金属扩散到互连电介质层中。 本发明还提供一种互连结构，其包括作为电介质盖的本发明的电介质膜。 还提供了制造本发明的电介质膜的方法。

    SiCOH film preparation using precursors with built-in porogen functionality
    56.
    发明授权
    SiCOH film preparation using precursors with built-in porogen functionality 有权
    使用具有内置致孔剂功能的前体的SiCOH膜制备

    公开(公告)号：US07521377B2

    公开(公告)日：2009-04-21

    申请号：US11329560

    申请日：2006-01-11

    申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

    Anti-aliased tagging using look-up table edge pixel identification
    60.
    发明申请
    Anti-aliased tagging using look-up table edge pixel identification 失效
    使用查找表边缘像素识别的抗锯齿标签

    公开(公告)号：US20070146386A1

    公开(公告)日：2007-06-28

    申请号：US11317782

    申请日：2005-12-23

    申请人： Robert Loce ,  Beilei Xu ,  Stuart Schweid ,  Son Nguyen ,  Michael Branciforte

    发明人： Robert Loce ,  Beilei Xu ,  Stuart Schweid ,  Son Nguyen ,  Michael Branciforte

    IPC分类号： G09G5/00

    CPC分类号： G06T11/203

    摘要： The teachings provided herein disclose an image processing method for rendering a digital image possessing anti-aliased pixels by selecting a target pixel location within the digital image; observing a set of pixels within a pixel observation window superimposed on the digital image relative to the target pixel location; generating edge-state codes for a plurality of pairs of neighboring vectors of pixels within the pixel observation window; generating edge-identification codes from the plurality of edge-state codes using at least one look-up table; and, utilizing the edge-identification codes to select and apply to the digital image at the target pixel either anti-aliased rendering or conventional halftoning. The anti-aliasing may employ pixel signals that are high addressable and directionally biased to a particular orientation.

    摘要翻译： 本文提供的教导公开了一种图像处理方法，用于通过选择数字图像内的目标像素位置来渲染具有抗锯齿像素的数字图像; 观察相对于目标像素位置叠加在数字图像上的像素观察窗内的一组像素; 为所述像素观察窗口内的多个相邻像素向量对生成边缘状态代码; 使用至少一个查找表从所述多个边缘状态代码生成边缘识别码; 并且利用边缘识别码选择并应用于目标像素处的数字图像，即抗锯齿渲染或常规半色调。 抗混叠可以采用高可寻址性并且被定向偏置于特定取向的像素信号。