公开(公告)号：US20120162283A1

公开(公告)日：2012-06-28

申请号：US13313592

申请日：2011-12-07

申请人： Hidekazu MIYAIRI ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA ,  Susumu KAWASHIMA

发明人： Hidekazu MIYAIRI ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA ,  Susumu KAWASHIMA

IPC分类号： G09G3/36 ,  G09G5/10

CPC分类号： G09G3/3413 ,  G09G3/342 ,  G09G3/3677 ,  G09G2310/0235 ,  G09G2320/0242 ,  G09G2320/0247 ,  G09G2320/0261

摘要： Input of image signals to part of a plurality of pixels included in a particular region of a pixel portion and supply of light to part of another plurality of pixels which is different from the part are performed concurrently. Therefore, it is not necessary to provide a period in which light is supplied to all of the plurality of pixels included in the region after the image signals are input thereto. In other words, it is possible to start input of the next image signals to all of the plurality of pixels included in the region just after the image signals are input thereto. Accordingly, it is possible to increase the input frequency of the image signals. As a result, it is possible to suppress deteriorations of display caused in the field-sequential liquid crystal display device.

摘要翻译： 将图像信号输入到包括在像素部分的特定区域中的多个像素的一部分并且向与该部分不同的另一多个像素的一部分提供光的同时进行。 因此，不需要在输入图像信号之后，向该区域中包含的多个像素的全部提供光。 换句话说，可以开始输入下一个图像信号到刚好在输入图像信号之后的区域中包括的多个像素的全部。 因此，可以增加图像信号的输入频率。 结果，可以抑制在场顺序液晶显示装置中引起的显示的恶化。

公开(公告)号：US20120100309A1

公开(公告)日：2012-04-26

申请号：US13273258

申请日：2011-10-14

申请人： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

发明人： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45574

摘要： A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.

摘要翻译： 等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。 第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。 第二气体扩散室与上部电极中的第一气体管连接。 上电极和室壁设置在同一轴线上。 分散板包括没有气孔的中心部分和具有多个气孔的周边部分。 中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。

公开(公告)号：US20120052637A1

公开(公告)日：2012-03-01

申请号：US13211565

申请日：2011-08-17

申请人： Ryu KOMATSU ,  Yasuhiro JINBO ,  Hidekazu MIYAIRI

发明人： Ryu KOMATSU ,  Yasuhiro JINBO ,  Hidekazu MIYAIRI

IPC分类号： H01L21/336 ,  H01L21/205

CPC分类号： H01L21/02532 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A seed crystal including mixed phase grains having high crystallinity at a low density is formed under a first condition over an insulating film, and then a first microcrystalline semiconductor film is formed over the seed crystal under a second condition that allows the mixed phase grains to grow and a space between the mixed phase grains to be filled. Then, a second microcrystalline semiconductor film is formed over the first microcrystalline semiconductor film under a third condition that allows formation of a microcrystalline semiconductor film having high crystallinity without increasing the space between the mixed phase grains included in the first microcrystalline semiconductor film.

摘要翻译： 在第一条件下，在绝缘膜上形成包含低密度结晶度的混合相的晶种，然后在允许混合晶粒生长的第二条件下在晶种上形成第一微晶半导体膜 以及要填充的混合相颗粒之间的空间。 然后，在允许形成具有高结晶度的微晶半导体膜而不增加包含在第一微晶半导体膜中的混晶相之间的空间的第三条件下，在第一微晶半导体膜上形成第二微晶半导体膜。

公开(公告)号：US20120034765A1

公开(公告)日：2012-02-09

申请号：US13185742

申请日：2011-07-19

申请人： Hidekazu MIYAIRI ,  Takashi IENAGA ,  Masao MORIGUCHI ,  Yosuke KANZAKI

发明人： Hidekazu MIYAIRI ,  Takashi IENAGA ,  Masao MORIGUCHI ,  Yosuke KANZAKI

IPC分类号： H01L21/20

CPC分类号： H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/32105 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film.

摘要翻译： 本发明的目的是提供一种具有改善的绝缘膜和微晶硅膜之间的粘附性的微晶硅膜的制造方法。 以下述方式形成微晶硅膜。 在绝缘膜上，具有通过稍后的等离子体氧化（例如，高于0nm且小于或等于5nm的高度）使微晶硅晶粒完全氧化的高度的微晶硅晶粒或微晶硅膜 或具有通过稍后的等离子体氧化（例如，厚度大于0nm且小于或等于5nm）使微晶硅膜或非晶硅膜完全氧化的厚度的非晶硅膜。 在微晶硅晶粒，微晶硅膜或非晶硅膜上进行包括氧或等离子体氧化的气氛中的等离子体处理，使得在绝缘膜上形成氧化硅晶粒或氧化硅膜。 在氧化硅晶粒或氧化硅膜上形成微晶硅膜。

公开(公告)号：US20110220907A1

公开(公告)日：2011-09-15

申请号：US13045951

申请日：2011-03-11

申请人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Satoshi TORIUMI

发明人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Satoshi TORIUMI

IPC分类号： H01L29/786

CPC分类号： H01L29/78648 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78687 ,  H01L29/78696

摘要： In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.

摘要翻译： 在倒置交错薄膜晶体管中，在栅极绝缘膜和用作源极布线和漏极布线的布线之间提供微晶硅膜和一对碳化硅膜。 在栅极绝缘膜侧形成微晶硅膜，在布线侧形成一对碳化硅膜。 以这种方式，可以以高生产率制造具有良好电特性的半导体器件。

公开(公告)号：US20110020989A1

公开(公告)日：2011-01-27

申请号：US12838023

申请日：2010-07-16

申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Hidekazu MIYAIRI ,  Mitsuhiro ICHIJO ,  Taichi NOZAWA

发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Hidekazu MIYAIRI ,  Mitsuhiro ICHIJO ,  Taichi NOZAWA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/28 ,  C23C16/45523 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78684

摘要： A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.

摘要翻译： 形成具有高结晶度的微晶半导体膜。 此外，具有优选的电特性和高可靠性的薄膜晶体管和包括薄膜晶体管的显示装置以高生产率制造。 以第一流量引入包含硅或锗的沉积气体的步骤，并且以固定速率引入氢气，并且以固定速率引入氢气，并且以第二流量引入含有硅或锗的沉积气体的步骤，从而 将含有硅或锗的氢气和沉积气体混合，供给高频电力。 因此，在基板上形成微晶半导体膜。

公开(公告)号：US20100059749A1

公开(公告)日：2010-03-11

申请号：US12547119

申请日：2009-08-25

申请人： Erika TAKAHASHI ,  Takayuki KATO ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO

发明人： Erika TAKAHASHI ,  Takayuki KATO ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO

IPC分类号： H01L29/786

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78618

摘要： A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.

摘要翻译： 提供一种薄膜晶体管，其包括在衬底上的栅极电极层，栅极电极层上的栅极绝缘层，在栅极绝缘层上包括非晶半导体的层，包括非晶形的层上的一对晶体区域 半导体以及与该对晶体区域接触的源极和漏极区域。 源区和漏区包括添加有赋予一种导电类型的杂质的微晶半导体层。

公开(公告)号：US20120229724A1

公开(公告)日：2012-09-13

申请号：US13416077

申请日：2012-03-09

申请人： Hidekazu MIYAIRI ,  Tetsuji Ishitani ,  Daisuke Kubota ,  Shinya Sasagawa

发明人： Hidekazu MIYAIRI ,  Tetsuji Ishitani ,  Daisuke Kubota ,  Shinya Sasagawa

IPC分类号： G02F1/136 ,  B05D3/10 ,  G02F1/1333

CPC分类号： G02F1/134363 ,  C09K19/0275 ,  G02F1/1362

摘要： A horizontal electric field mode liquid crystal display device having a novel electrode structure, and a manufacturing method thereof are provided. The liquid crystal display device includes a first substrate having an insulating surface; a first conductive film and a second conductive film over the insulating surface; a first insulating film over the first conductive film; a second insulating film over the second conductive film; a second substrate facing the first substrate; and a liquid crystal layer positioned between the first substrate and the second substrate. Part of the first conductive film exists also on a side portion of the first insulating film, and part of the second conductive film exists also on a side portion of the second insulating film. The liquid crystal layer includes liquid crystal exhibiting a blue phase.

摘要翻译： 提供具有新型电极结构的水平电场模式液晶显示装置及其制造方法。 液晶显示装置包括具有绝缘面的第一基板; 绝缘表面上的第一导电膜和第二导电膜; 第一导电膜上的第一绝缘膜; 在第二导电膜上的第二绝缘膜; 面对所述第一基板的第二基板; 以及位于第一基板和第二基板之间的液晶层。 第一导电膜的一部分也存在于第一绝缘膜的侧部，第二导电膜的一部分也存在于第二绝缘膜的侧部。 液晶层包括呈蓝色相的液晶。

公开(公告)号：US20120115285A1

公开(公告)日：2012-05-10

申请号：US13282650

申请日：2011-10-27

申请人： Ryu KOMATSU ,  Yasuhiro JINBO ,  Hidekazu MIYAIRI

发明人： Ryu KOMATSU ,  Yasuhiro JINBO ,  Hidekazu MIYAIRI

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  Y02A40/29

摘要： A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains.

摘要翻译： 在通过等离子体CVD法在绝缘膜上形成包含非晶硅区域的混合相晶粒和作为可以被认为是单晶的微晶的晶种的晶种，其中在第一条件下，使得具有高的 以低密度形成晶粒尺寸的结晶度和高均匀性，然后通过等离子体CVD法在微晶半导体膜上形成层叠在晶种上的第二条件，使得混合相晶粒生长以填充 混合相之间的间隙。

公开(公告)号：US20120052661A1

公开(公告)日：2012-03-01

申请号：US13213130

申请日：2011-08-19

申请人： Shinya SASAGAWA ,  Hiroshi FUJIKI ,  Shinobu FURUKAWA ,  Hidekazu MIYAIRI

发明人： Shinya SASAGAWA ,  Hiroshi FUJIKI ,  Shinobu FURUKAWA ,  Hidekazu MIYAIRI

IPC分类号： H01L21/20

CPC分类号： H01L21/32137 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78663 ,  H01L29/78669 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78687

摘要： A method for etching is provided in which the etching selectivity of an amorphous semiconductor film to a crystalline semiconductor film is high. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas of a Br-based gas, a F-based gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Reduction in the film thickness of the exposed portion can be suppressed by performing the etching in such a manner. Moreover, when etching for forming a back channel portion of a thin film transistor is performed with the method for etching, favorable electric characteristics of the thin film transistor can be obtained. An insulating layer is preferably provided over the thin film transistor.

摘要翻译： 提供了一种用于蚀刻的方法，其中非晶半导体膜对结晶半导体膜的蚀刻选择性高。 使用Br基气体，F系气体和氧气的混合气体蚀刻在结晶半导体膜上设置非晶半导体膜的层叠半导体膜的一部分，使得部分结晶半导体 提供在堆叠的半导体膜中的膜被暴露。 可以通过以这种方式进行蚀刻来抑制曝光部分的膜厚度的降低。 此外，当利用蚀刻方法进行用于形成薄膜晶体管的背沟道部分的蚀刻时，可以获得薄膜晶体管的良好的电特性。 绝缘层优选设置在薄膜晶体管的上方。