公开(公告)号：US5846844A

公开(公告)日：1998-12-08

申请号：US598134

申请日：1996-02-07

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Theeradetch Detchprohm

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Theeradetch Detchprohm

IPC分类号： H01L21/20 ,  H01L21/363 ,  H01L21/84 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/84 ,  H01L33/007 ,  Y10S117/915 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S148/135

摘要： A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.

摘要翻译： 满足式Al x Ga y In 1-x-y N，包括x = 0，y = 0和x = y = 0的氮 - 基III族化合物半导体及其制造方法包括以下步骤：形成氧化锌（ZnO） 在中间ZnO层上形成满足式Al x Ga y In 1-x-y N的氮基III半导体层，包括x = 0，y = 0和x = y = 0，并分离中间体ZnO 通过仅用于ZnO层的蚀刻液进行湿法蚀刻。

公开(公告)号：US5834326A

公开(公告)日：1998-11-10

申请号：US763779

申请日：1996-12-11

申请人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325 ,  Y10S148/065 ,  Y10S148/113

摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

公开(公告)号：US5825789A

公开(公告)日：1998-10-20

申请号：US577620

申请日：1995-12-22

申请人： Yoshiaki Watanabe ,  Satoshi Miyaguchi ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Yoshiaki Watanabe ,  Satoshi Miyaguchi ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/323 ,  H01S3/10 ,  H01S3/083

CPC分类号： H01S5/0201 ,  H01S5/028

摘要： A method for forming a resonator in a semiconductor laser device comprises the steps of; filling with a resin a gap surrounding the side surfaces of the waveguide for a resonator other than the end-surface to be polished; polishing the end-surface and the resin surrounding it; forming a predetermined optical coating on the polished end-surface and the resin in the state of the laser waveguide and the electrode being embedded; and removing the embedding resin. Both the bending of polished end-surfaces and the entering of the thin film into the side surface of the laser waveguide is prevented so that a high smooth end-surface of mirror coating for resonator is achieved. Furthermore, any crystals are used for a substrate carrying a semiconductor laser structure with a resonator even if that crystal is of non-cleavage, according to that method.

摘要翻译： 一种在半导体激光器件中形成谐振器的方法包括以下步骤： 用树脂填充围绕波导的侧表面的间隙，用于除了待抛光的端面之外的谐振器; 抛光端面和周围的树脂; 在激光波导和电极嵌入的状态下在抛光的端面上形成预定的光学涂层和树脂; 并除去嵌入树脂。 抛光端面的弯曲和薄膜进入激光波导的侧表面均被防止，从而实现了用于谐振器的镜面涂层的高光滑端面。 此外，根据该方法，任何晶体都用于携带具有谐振器的半导体激光器结构的衬底，即使该晶体是非分裂的。

公开(公告)号：US5281830A

公开(公告)日：1994-01-25

申请号：US781910

申请日：1991-10-24

申请人： Masahiro Kotaki ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Masahiro Kotaki ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/32 ,  H01L33/325 ,  H01L33/40

摘要： There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, where 0.ltoreq.x

摘要翻译： 公开了具有pn结的两种类型的氮化镓LED。 氮化镓化合物半导体（Al x Ga 1-x N，其中0 <= x <1）的LED包括n层; 在掺杂p型杂质和照射电子线时显示p型导电的p层，p层与n层的接合; 用于n层的第一电极，以连接到n层，穿过形成在从p层延伸到n层的p层中的孔; 以及p层的第二电极，其形成在由p层中形成的沟槽分隔开的区域中，以便从p层的上表面延伸到所述n层。 LED包括n层; 掺有p型杂质的i层，i层与n层结合; 用于所述n层的第一电极，以连接到n层，穿过形成在从i层的上表面延伸到n层的i层中的孔; 在i层的特定区域中的p型部分，其通过用电子射线转换成p型导电，所述p型部分被形成为使得所述第一电极被所述i层绝缘和分离; 和用于所述p型部件的第二电极。

公开(公告)号：US4408217A

公开(公告)日：1983-10-04

申请号：US213599

申请日：1980-12-04

申请人： Hiroyuki Kobayashi ,  Yoshimasa Ohki ,  Yukio Toyoda ,  Isamu Akasaki

发明人： Hiroyuki Kobayashi ,  Yoshimasa Ohki ,  Yukio Toyoda ,  Isamu Akasaki

IPC分类号： H01L21/205 ,  H01L21/86 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L33/0008 ,  H01L33/007 ,  Y10S117/913

摘要： An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.

摘要翻译： 一种电致发光半导体器件，包括依次外延沉积在热处理蓝宝石衬底的表面上的导电和阻性结晶氮化镓（GaN）的主体，以及外延沉积在电阻体上的绝缘晶体氮化镓体。

公开(公告)号：US4319259A

公开(公告)日：1982-03-09

申请号：US142712

申请日：1980-04-22

申请人： Masaaki Ohsima ,  Isamu Akasaki

发明人： Masaaki Ohsima ,  Isamu Akasaki

IPC分类号： H01L21/208 ,  H01L33/30 ,  H01S5/00 ,  H01L27/14

CPC分类号： H01L33/0062 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02625 ,  H01L33/0025

摘要： An electroluminescent element comprising an n-type GaAs substrate, a GaAsP grading layer and an n-type GaAsP constant layer both of which are grown on the substrate epitaxially in this order, and an In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y layer formed on top of the constant layer where 0.002.ltoreq.x.ltoreq.0.08 and 0.2.ltoreq.y.ltoreq.0.4.

摘要翻译： 一种电致发光元件，包括在基板上以该顺序外延生长的n型GaAs衬底，GaAsP分级层和n型GaAsP恒定层，以及形成在恒定的顶部上的In x Ga 1-x As y P 1-y层 其中0.002≤x≤0.08且0.2≤y≤0.4。

公开(公告)号：US09099597B2

公开(公告)日：2015-08-04

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/16 ,  H01L33/12 ,  H01L33/34

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100. Visible light is created from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from the nitride semiconductor layer.

摘要翻译： 提供一种发光二极管，其可以获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发射。由多孔状态的单晶6H型SiC组成的多孔层124形成在 发光二极管元件100的SiC衬底102.当从氮化物半导体层发射的紫外线激发多孔层124时，可见光由蓝色到绿色产生。

公开(公告)号：US09029174B2

公开(公告)日：2015-05-12

申请号：US14001454

申请日：2011-02-25

申请人： Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L21/02365 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L2224/16225

摘要： A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.

摘要翻译： 一种结构包括基板，形成在基板的表面上并包括AlN层的模板层，以及通过在模板层上堆叠AlGaN半导体层而形成的器件结构部分。 对于该结构，通过激光通过基板的激光的激光和激光被AlN层吸收，AlN层从靠近基板的一侧照射，其中AlN 层从基底接收压应力。 这允许AlN层在AlN层和衬底之间的至少一个界面上比衬底的表面更多地膨胀，以便增加压缩应力，以便从AlN层去除衬底。

公开(公告)号：US20120037923A1

公开(公告)日：2012-02-16

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/02

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same.[MEANS FOR SOLVING] Porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100 such that visible light which is from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from nitride semiconductor layer.

摘要翻译： [问题]提供一种能够获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发光二极管及其制造方法。 [解决方案]由多孔状态的单晶6H型SiC构成的多孔层124形成在发光二极管元件100的SiC衬底102上，使得当多孔层124的蓝色到绿色的可见光 被从氮化物半导体层发射的紫外线激发。

公开(公告)号：US07985964B2

公开(公告)日：2011-07-26

申请号：US12313123

申请日：2008-11-17

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/40

摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

摘要翻译： 本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。