公开(公告)号：US20060152767A1

公开(公告)日：2006-07-13

申请号：US11326481

申请日：2006-01-06

申请人： Hiroshi Asai ,  Masayuki Nakano ,  Yasuhiro Takemoto

发明人： Hiroshi Asai ,  Masayuki Nakano ,  Yasuhiro Takemoto

IPC分类号： H04N1/40

CPC分类号： H04N1/4051 ,  H04N1/4055

摘要： In a threshold matrix generation part 3 implemented by a computer, a tint image in a specified gray level is generated from temporary lighting order set in a matrix area, and a smoothing operation is performed on the tint image, to generate a grayscale evaluation image. The lighting order is modified by changing ordinal numbers in the lighting order of respective positions included in specified areas in the matrix area which correspond to areas around boundaries of halftone dot areas in the tint image on the basis of values of corresponding pixels in the evaluation image. With this operation, when the smoothing operation is performed on a tint image in the specified gray level generated in accordance with a modified lighting order, a variation among values of pixels included in the specified areas becomes smaller than a variation among values of pixels included in the specified areas in a case where the smoothing operation is performed on the tint image in the specified gray level generated in accordance with an unmodified lighting order. Then, threshold values are determined in the matrix area with reflecting the modified lighting order, to generate the threshold matrix which is possible to suppress graininess in a generated halftone dot image.

公开(公告)号：US20050264834A1

公开(公告)日：2005-12-01

申请号：US11109728

申请日：2005-04-20

申请人： Hiroshi Asai ,  Masayuki Nakano ,  Yasuhiro Takemoto

发明人： Hiroshi Asai ,  Masayuki Nakano ,  Yasuhiro Takemoto

IPC分类号： H04N1/405 ,  H04N1/52 ,  H04N1/58

CPC分类号： H04N1/4051 ,  H04N1/4055 ,  H04N1/52

摘要： To generate a threshold matrix which is compared with an original image in creating a halftone dot image for each color component, in a matrix area for one color component, dot centers are arranged almost uniformly in a random fashion at a predetermined density and in a matrix area for another color component, dot centers are arranged almost uniformly in a random fashion at a density about 0.7 times the predetermined density. Then, threshold values are set so that dots should grow around the dot centers in accordance with an increase in gray level of the original image, to generate the threshold matrix for each color component. In creating the halftone dot images by using these threshold matrixes, characteristics of spatial frequency of the halftone dot images of these color components can be represented in a frequency space as areas (75K, 75C) in a shape of concentric rings. As a result, it is possible to create a multicolor halftone dot image with less graininess, with no portions approximate to each other in the characteristics of spatial frequency of these halftone dot images.

摘要翻译： 为了产生与原始图像进行比较以创建每个颜色分量的半色调点图像的阈值矩阵，在一个颜色分量的矩阵区域中，以预定密度和矩阵的随机方式几乎均匀地布置点中心 面积为另一种颜色分量，点中心几乎均匀地以约0.7倍于预定密度的密度随机排列。 然后，设置阈值，使得根据原始图像的灰度级的增加，点应该围绕点中心生长，以产生每个颜色分量的阈值矩阵。 在通过使用这些阈值矩阵创建半色调点图像时，这些颜色分量的半色调点图像的空间频率的特性可以在频率空间中表示为同心圆形区域（75K，75C）。 结果，可以产生具有较少颗粒度的多色半色调点图像，在这些半色调网点图像的空间频率的特性中没有彼此近似的部分。

公开(公告)号：US06600585B1

公开(公告)日：2003-07-29

申请号：US09375381

申请日：1999-08-17

申请人： Masayuki Nakano

发明人： Masayuki Nakano

IPC分类号： H04B1004

CPC分类号： H04B10/502 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H04B10/564 ,  H01L2924/00014

摘要： An optical transmitter includes a light-emitting diode, a drive circuit for outputting a light signal while driving the light-emitting diode which is connected between two electrodes of an anode and a cathode of the light-emitting diode, a voltage applying terminal for a light-emitting diode which is arranged on a package on which the light-emitting diode and the drive circuit are mounted, for applying a voltage to one electrode of the light-emitting diode, and a current supplying terminal for screening a light-emitting diode and arranged on the package for applying a current to the other electrode of the light-emitting diode at a time of screening the light-emitting diode.

摘要翻译： 光发射机包括发光二极管，用于在连接在发光二极管的阳极和阴极的两个电极之间的发光二极管的同时输出光信号的驱动电路，用于发光二极管的电压施加端子 布置在其上安装有发光二极管和驱动电路的封装上的用于向发光二极管的一个电极施加电压的发光二极管和用于屏蔽发光二极管的电流供给端子 并且布置在封装件上，以在屏蔽发光二极管时将电流施加到发光二极管的另一个电极。

公开(公告)号：US06242224B1

公开(公告)日：2001-06-05

申请号：US08848661

申请日：1997-04-29

申请人： Masayuki Nakano ,  Hiroto Chaen ,  Toshiyuki Sugimoto ,  Toshio Miyake

发明人： Masayuki Nakano ,  Hiroto Chaen ,  Toshiyuki Sugimoto ,  Toshio Miyake

IPC分类号： C12P1914

CPC分类号： A23G3/42 ,  A23G3/346 ,  A23G3/38 ,  A23G2200/02 ,  A23G2200/06 ,  A23L9/12 ,  A23L19/20 ,  A23L27/34 ,  A23L27/35 ,  A23L29/35 ,  A61K8/60 ,  A61K8/732 ,  A61Q11/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/02 ,  C12N9/2411 ,  C12N9/2414 ,  C12P19/14 ,  C12R1/05 ,  C12Y302/01 ,  C13K13/00 ,  Y10S435/829

摘要： Disclosed is a novel amylase which mainly forms maltohexaose and maltoheptaose when acts on starch, but does not substantially hydrolyze maltohexaose and a lower molecular oligosaccharide than maltohexaose. The amylase can be prepared from microorganisms of the genus Alcaligenes, and has a relatively-high optimum temperature and thermal stability, as well as a relatively-wide range of optimum pH and pH stability. By using the amylase, saccharide compositions rich in maltohexaose and/or maltoheptaose or those rich in maltohexaitol and/or maltoheptaitol can be readily prepared in an industrial scale, and the saccharide compositions thus obtained can be used in a variety of food products, cosmetics and pharmaceuticals.

摘要翻译： 公开了一种新的淀粉酶，当作用于淀粉时，主要形成麦芽六糖和麦芽庚糖，但不比麦芽六糖大大水解麦芽六糖和低分子寡糖。 淀粉酶可以由产碱杆菌属的微生物制备，并且具有相对较高的最佳温度和热稳定性，以及相对宽范围的最佳pH和pH稳定性。 通过使用淀粉酶，可以容易地以工业规模制备富含麦芽六糖和/或麦芽庚糖的富含麦芽六糖和/或麦芽庚糖醇的糖组合物，由此获得的糖组合物可用于各种食品，化妆品和 药品。

公开(公告)号：US6107348A

公开(公告)日：2000-08-22

申请号：US848750

申请日：1997-05-01

申请人： Masayuki Nakano ,  Hiroto Chaen ,  Toshiyuki Sugimoto ,  Toshio Miyake

发明人： Masayuki Nakano ,  Hiroto Chaen ,  Toshiyuki Sugimoto ,  Toshio Miyake

IPC分类号： A23G3/00 ,  A23G3/34 ,  A23G3/38 ,  A23G3/42 ,  A23L1/09 ,  A23L1/187 ,  A23L1/218 ,  A23L1/236 ,  A61K8/04 ,  A61K8/34 ,  A61K8/60 ,  A61K8/73 ,  A61Q11/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/02 ,  C08B37/00 ,  C12N9/26 ,  C12P19/14 ,  C12P19/20 ,  C13K13/00 ,  A61K47/36 ,  C12P19/04

CPC分类号： A23G3/42 ,  A23G3/346 ,  A23G3/38 ,  A23L19/20 ,  A23L27/34 ,  A23L27/35 ,  A23L29/35 ,  A23L9/12 ,  A61K8/60 ,  A61K8/732 ,  A61Q19/00 ,  C12N9/2411 ,  C12N9/2414 ,  C12P19/14 ,  C12R1/05 ,  C12Y302/01 ,  C13K13/00 ,  A23G2200/02 ,  A23G2200/06 ,  A61Q11/00 ,  A61Q17/04 ,  A61Q19/02 ,  Y10S435/829

摘要： Disclosed is a novel amylase which mainly forms maltohexaose and maltoheptaose when acts on starch, but does not substantially hydrolyze maltohexaose and a lower molecular oligosaccharide than maltohexaose. The amylase can be prepared from microorganisms of the genus Alcaligenes, and has a relatively-high optimum temperature and thermal stability, as well as a relatively-wide range of optimum pH and pH stability. By using the amylase, saccharide compositions rich in maltohexaose and/or maltoheptaose or those rich in maltohexaitol and/or maltoheptaitol can be readily prepared in an industrial scale, and the saccharide compositions thus obtained can be used in a variety of food products, cosmetics and pharmaceuticals.

摘要翻译： 公开了一种新的淀粉酶，当作用于淀粉时，主要形成麦芽六糖和麦芽庚糖，但不比麦芽六糖大大水解麦芽六糖和较低分子寡糖。 淀粉酶可以由产碱杆菌属的微生物制备，并且具有相对较高的最佳温度和热稳定性，以及相对宽范围的最佳pH和pH稳定性。 通过使用淀粉酶，可以容易地以工业规模制备富含麦芽六糖和/或麦芽庚糖的富含麦芽六糖和/或麦芽庚糖醇的糖组合物，由此获得的糖组合物可用于各种食品，化妆品和 药品。

公开(公告)号：US5330573A

公开(公告)日：1994-07-19

申请号：US39213

申请日：1993-04-05

申请人： Masayuki Nakano ,  Ryozo Kuramoto ,  Shigeo Otozaki ,  Katsuaki Kaneko ,  Hideo Shibasaki ,  Noritoshi Tamura

发明人： Masayuki Nakano ,  Ryozo Kuramoto ,  Shigeo Otozaki ,  Katsuaki Kaneko ,  Hideo Shibasaki ,  Noritoshi Tamura

IPC分类号： C04B14/42 ,  C01B33/24 ,  C01B33/44 ,  C04B16/02 ,  C04B28/18 ,  C04B40/00 ,  C04B111/30 ,  C04B2/00

CPC分类号： C04B28/188 ,  C04B28/18 ,  C04B2111/00189 ,  Y02P40/615 ,  Y02W30/97

摘要： A molding of calcium silicate having high strength, which is similar to a natural timber, wherein tobermorite, C--S--H (Calcium Silicate hydrate) and quartz are mixed, and glass fiber and pulp are added, respectively, and a Ti/Qi peak ratio of which is powder X-ray diffracted is 0.1 to 1.0, and an absolute bulk density of the molding is 0.3 to 0.7 g/cc.

摘要翻译： PCT No.PCT / JP91 / 01069 Sec。 371日期：1993年4月5日 102（e）日期1993年4月5日PCT 1991年8月9日PCT PCT。 出版物WO93 / 02986 日期：1993年2月18日。一种与天然木材类似的高强度硅酸钙的成型，其中分别加入了雪宝石，CSH（硅酸钙水合物）和石英以及玻璃纤维和纸浆， 粉末X射线衍射的Ti / Qi峰值比为0.1〜1.0，成型体的绝对体积密度为0.3〜0.7g / cc。

公开(公告)号：US09287458B2

公开(公告)日：2016-03-15

申请号：US13148777

申请日：2010-02-08

申请人： Hiroyuki Togawa ,  Masayuki Nakano ,  Hidetaka Yamada

发明人： Hiroyuki Togawa ,  Masayuki Nakano ,  Hidetaka Yamada

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62

摘要： A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.

摘要翻译： 一种半导体发光二极管，包括：支撑衬底; 依次设置在支撑基板的上表面侧的中间电极部，第二导电半导体层，有源层，第一导电半导体层和上电极部分的中间层; 以及设置在所述支撑基板的下表面侧的下电极层，其中：所述中间层具有直线状或岛状形状的至少一个中间电极部， 并且上电极部分和中间电极部分分别以这些电极部分的位置关系设置在通过将这些电极部分投影在与支撑基板的上表面平行的假想平面上的视图中 彼此偏移。

公开(公告)号：US08581106B2

公开(公告)日：2013-11-12

申请号：US13206389

申请日：2011-08-09

申请人： Yoshikazu Oshika ,  Masayuki Nakano

发明人： Yoshikazu Oshika ,  Masayuki Nakano

IPC分类号： H05K1/09

CPC分类号： H05K1/111 ,  B23K35/001 ,  H01L21/4864 ,  H01L23/15 ,  H01L23/49811 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/341 ,  H05K3/388 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2224/48

摘要： A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.

摘要翻译： 公开了一种具有在焊接中具有优异润湿性的电极层的基座及其制造方法。 用于安装半导体器件的基座（1）包括副安装座基板（2），形成在副安装座基板（2）的表面上的基板保护层（3），形成在基板保护层上的电极层（4） 层（3）和形成在所述电极层（3）上的焊料层（5），其中所述电极层（4）的平均表面粗糙度小于1μm。 电极层（4）的平均表面粗糙度降低，能够提高焊料层（5）的润湿性，使焊料层（5）和半导体装置牢固地结合在一起，而不会产生任何的焊剂。 从而获得了安装在其上的半导体器件的耐热性降低的基座（1），降低其温度升高并提高其性能和使用寿命。

公开(公告)号：US08472208B2

公开(公告)日：2013-06-25

申请号：US11908861

申请日：2006-03-17

申请人： Yoshikazu Oshika ,  Masayuki Nakano

发明人： Yoshikazu Oshika ,  Masayuki Nakano

IPC分类号： H01R9/00

CPC分类号： H05K1/111 ,  B23K35/001 ,  H01L21/4864 ,  H01L23/15 ,  H01L23/49811 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/341 ,  H05K3/388 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2224/48

摘要： A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount (1) for having a semiconductor device mounted thereon comprises a submount substrate (2), a substrate protective layer (3) formed on a surface of the submount substrate (2), an electrode layer (4) formed on the substrate protective layer (3) and a solder layer (5) formed on the electrode layer (3) wherein the electrode layer (4) is made having an average surface roughness of less than 1 μm. The reduced average surface roughness of the electrode layer (4) improves wettability of the solder layer (5), allowing the solder layer (5) and a semiconductor device to be firmly bonded together without any flux therebetween. A submount (1) is thus obtained which with the semiconductor device mounted thereon is reduced in heat resistance, reducing its temperature rise and improving its performance and service life.

摘要翻译： 公开了一种具有在焊接中具有优异润湿性的电极层的基座及其制造方法。 用于安装半导体器件的基座（1）包括副安装座基板（2），形成在副安装座基板（2）的表面上的基板保护层（3），形成在基板保护层上的电极层 层（3）和形成在所述电极层（3）上的焊料层（5），其中所述电极层（4）的平均表面粗糙度小于1μm。 电极层（4）的平均表面粗糙度降低，能够提高焊料层（5）的润湿性，使焊料层（5）和半导体装置牢固地结合在一起，而不会产生任何的焊剂。 从而获得了安装在其上的半导体器件的耐热性降低的基座（1），降低其温度升高并提高其性能和使用寿命。

公开(公告)号：US08310047B2

公开(公告)日：2012-11-13

申请号：US12067355

申请日：2006-09-19

申请人： Masayuki Nakano ,  Yoshikazu Oshika

发明人： Masayuki Nakano ,  Yoshikazu Oshika

IPC分类号： H01L23/34

CPC分类号： C22C5/02 ,  B23K35/262 ,  B23K35/264 ,  B23K35/282 ,  B23K35/286 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3033 ,  H01L21/50 ,  H01L23/3735 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15724 ,  H01L2924/19107 ,  H01L2924/351 ,  H05K1/0306 ,  H05K1/111 ,  H05K3/3457 ,  H05K2201/09745 ,  Y02P70/611 ,  Y10T29/49393 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00

摘要： A heat sink (10) is disclosed which comprises a substrate (1), an electrode layer (2) formed on the substrate (1) and a solder layer (3) formed on the substrate (1) wherein the solder layer (3) provides a bonding strength of not less than 30 MPa and a shear strain of not less than 0.07. The heat sink may be a sub-mount which comprises a sub-mount substrate (1), an electrode layer (2) formed on the substrate (1) and a solder layer (3) formed on the substrate (1) wherein the electrode layer (2) is formed with a window portion (2A) having the solder layer (3) embedded therein and is connected to an outer peripheral area of the solder layer (3). A sub-mount that has a high strength of bonding between the solder layer (3) and a semiconductor device is provided at a reduced cost.

摘要翻译： 公开了一种散热器（10），其包括基板（1），形成在基板（1）上的电极层（2）和形成在基板（1）上的焊料层（3），其中焊料层（3） 提供不小于30MPa的接合强度和不小于0.07的剪切应变。 散热器可以是子安装件，其包括副安装基板（1），形成在基板（1）上的电极层（2）和形成在基板（1）上的焊料层（3），其中电极 层（2）形成有其中嵌入有焊料层（3）的窗口部分（2A），并且连接到焊料层（3）的外周区域。 以降低的成本提供了在焊料层（3）和半导体器件之间具有高粘合强度的子安装件。