公开(公告)号：US20150187991A1

公开(公告)日：2015-07-02

申请号：US14194509

申请日：2014-02-28

Applicant: LuxVue Technology Corporation

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L33/06 ,  H01L27/01

CPC classification number: H01L33/145 ,  G09G3/32 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/30 ,  H01L33/42 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract translation: 公开了用于形成LED器件阵列的方法和结构。 根据本发明的实施例的LED器件可以包括内部限制的电流注入区域，以减少由于边缘效应引起的非辐射复合。 限制电流的几种方式可以包括电流分布层的蚀刻去除，电流分布层和活性层的蚀刻去除，随后的台面再生长，通过离子注入或扩散的分离，量子阱混合和氧化物隔离。

公开(公告)号：US20150179703A1

公开(公告)日：2015-06-25

申请号：US14640979

申请日：2015-03-06

Applicant: LuxVue Technology Corporation

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L27/15 ,  H01L33/42

CPC classification number: H01L27/156 ,  G09G3/32 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/124 ,  H01L33/20 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. A ground line is located in the non-pixel area and an array of ground tie lines run between the bank openings in the pixel area and are electrically connected to the ground line in the non-pixel area.

Abstract translation: 描述显示面板和形成显示面板的方法。 显示面板可以包括包括像素区域和非像素区域的薄膜晶体管基板。 像素区域包括堤开口的阵列和堤开口阵列内的一组底部电极。 接地线位于非像素区域中，并且阵列阵列在像素区域中的堤开口之间延伸并且电连接到非像素区域中的接地线。

公开(公告)号：US20150093842A1

公开(公告)日：2015-04-02

申请号：US14563763

申请日：2014-12-08

Applicant: LuxVue Technology Corporation

Inventor： John A. Higginson ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/62 ,  H01L33/06 ,  H01L33/42

CPC classification number: H01L25/167 ,  H01L21/56 ,  H01L23/3171 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1262 ,  H01L33/005 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

Abstract translation: 公开了一种用于在接收基板上接收微型装置的方法和结构。 诸如微型LED器件的微器件通过覆盖接收衬底上的导电层的钝化层穿孔，并且钝化层硬化。 在一个实施例中，微型LED器件通过B阶热固性材料穿孔。 在一个实施例中，微型LED器件穿过热塑性材料。

公开(公告)号：US20140159066A1

公开(公告)日：2014-06-12

申请号：US13754739

申请日：2013-01-30

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Hsin-Hua Hu ,  Andreas Bibl

IPC: H01L21/78 ,  H01L27/15

CPC classification number: H01L21/7806 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/0079 ,  H01L2224/83 ,  H01L2224/95 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is within an array of staging cavities on a carrier substrate. Each micro device is laterally retained between a plurality of staging bollards of a corresponding staging cavity.

Abstract translation: 公开了一种稳定微器件阵列的方法和结构。 微器件阵列位于载体衬底上的分段腔阵列内。 每个微型装置横向保持在相应的分段腔的多个分段固定柱之间。

公开(公告)号：US20140159064A1

公开(公告)日：2014-06-12

申请号：US13710443

申请日：2012-12-10

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L27/15

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/06 ,  H01L33/36 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/95 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract translation: 描述了发光器件的反射堤结构。 反射堤结构可以包括衬底，衬底上的绝缘层，以及绝缘层中的堤开口阵列，每个堤开口包括底表面和侧壁。 反射层跨越绝缘层中每个堤开口的侧壁。

公开(公告)号：US20130210194A1

公开(公告)日：2013-08-15

申请号：US13749647

申请日：2013-01-24

Applicant: LuxVue Technology Corporation

Inventor： Andreas Bibl ,  John A. Higginson ,  Hsin-Hua Hu ,  Hung-Fai Stephen Law

IPC: H01L23/00

CPC classification number: H01L24/83 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/95 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29183 ,  H01L2224/75261 ,  H01L2224/75281 ,  H01L2224/75282 ,  H01L2224/75283 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2224/95001 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01031 ,  H01L2924/01051 ,  H01L2924/01029 ,  H01L2924/01048 ,  H01L2924/01082 ,  H01L2924/0103

Abstract: Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

Abstract translation: 描述静电转印头阵列组件以及将微器件阵列转移和接合到接收衬底的方法。 在一个实施例中，一种方法包括从载体基板拾取微器件阵列，其中静电转印头组件支持静电转印头阵列，使接收基片与微器件阵列接触，将静电转印头 组件将微器件阵列接合到接收衬底，以及将微器件阵列释放到接收衬底上。

公开(公告)号：US20130128585A1

公开(公告)日：2013-05-23

申请号：US13708704

申请日：2012-12-07

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L33/04 ,  F21V7/00 ,  H01L29/06

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。