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119 条记录 (耗时 0.029 秒)

    Low density, high porosity material as gate dielectric for field emission device
    52.
    发明授权
    Low density, high porosity material as gate dielectric for field emission device 失效

    公开(公告)号：US5569058A

    公开(公告)日：1996-10-29

    申请号：US461230

    申请日：1995-06-05

    申请人： Bruce Gnade ,  Chih-Chen Cho ,  Jules D. Levine

    发明人： Bruce Gnade ,  Chih-Chen Cho ,  Jules D. Levine

    IPC分类号： H01J1/304 ,  H01J1/30 ,  H01J9/18

    CPC分类号： H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

    摘要： A porous dielectric material such as silica-based aerogel is used as the dielectric layer 48 between the gate and the cathode on the emitter plate 12 of a field emission device. Aerogel, which can have a relative dielectric constant as low as 1.03, is deposited over the resistive layer 44 of the emitter plate 12. Metal layer 49, functioning as the gate electrode, is subsequently deposited over the aerogel layer 48. The use of aerogel as a gate dielectric reduces power consumption. In a disclosed embodiment, aerogel layer 48 is comprised of sublayers 48a, 48b, and 48c of aerogels of differing densities, thereby providing better adhesion of the aerogel gate dielectric to both the resistive layer 44 and metal layer 49. Methods of fabricating the aerogel gate dielectric are disclosed.

    Porous composites as a low dielectric constant material for electronics applications
    53.
    发明授权
    Porous composites as a low dielectric constant material for electronics applications 失效
    多孔复合材料作为用于电子应用的低介电常数材料

    公开(公告)号：US5561318A

    公开(公告)日：1996-10-01

    申请号：US477029

    申请日：1995-06-07

    申请人： Bruce E. Gnade ,  Chih-Chen Cho ,  Douglas M. Smith

    发明人： Bruce E. Gnade ,  Chih-Chen Cho ,  Douglas M. Smith

    IPC分类号： C04B38/00 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

    CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L21/3121 ,  H01L2221/1047 ,  H01L2924/0002

    摘要： This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying and gelling one or more solutions between and over conductors 24 and drying the wet gel to create at least porous dielectric sublayers 28 and 29. By varying the composition of the solutions, gelling conditions, drying temperature, composition of the solvents in the wet gel, or a combination of these approaches, the porosity of the sublayers may be tailored individually. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.

    摘要翻译： 本发明提供一种在相邻导体之间制造具有降低的电容的半导体器件的方法。 该方法可以包括在导体24之间和之上施加和凝胶化一种或多种溶液并干燥湿凝胶以产生至少多孔介电子层28和29.通过改变溶液的组成，胶凝条件，干燥温度，溶剂的组成 在湿凝胶中，或这些方法的组合，子层的孔隙率可以单独定制。 无孔介电层30可以形成在多孔层28之上，多孔层28可以完成层间电介质。 公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。

    Epitaxial metal-insulator-metal-semiconductor structures
    54.
    发明授权
    Epitaxial metal-insulator-metal-semiconductor structures 失效
    外延金属 - 绝缘体 - 金属 - 半导体结构

    公开(公告)号：US5529640A

    公开(公告)日：1996-06-25

    申请号：US302302

    申请日：1994-09-08

    申请人： Chih-Chen Cho

    发明人： Chih-Chen Cho

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/3205 ,  H01L29/51 ,  H01L29/06

    CPC分类号： H01L21/28194 ,  H01L21/28512 ,  H01L21/314 ,  H01L21/32051 ,  H01L29/51

    摘要： In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1.times.10.sup.-7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25.degree. C. and 400.degree. C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25.degree. C. and 200.degree. C., starting a deposition of epitaxial CaF.sub.2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200.degree. C. and 500.degree. C. over a time period, maintaining the third temperature until the epitaxial CaF.sub.2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF.sub.2 on the first metal layer.

    摘要翻译： 在本发明的一种形式中，一种用于在半导体表面上生长外延绝缘体 - 金属结构的方法包括以下步骤：将半导体表面保持在低于约1×10-7毫巴的压力，将半导体表面保持在基本固定的第一 在约25℃至400℃之间的温度下，在半导体表面上沉积外延金属层，将半导体表面调节至约25℃至200℃之间的基本固定的第二温度，开始沉积外延 CaF2在第一金属层上，在一段时间内将第二温度升至第二温度至200℃至500℃之间的第三基本上固定的温度，保持第三温度，直到外延CaF 2沉积到期望的厚度，并停止 在第一金属层上沉积外延CaF 2。

    Method of forming air gap dielectric spaces between semiconductor leads
    55.
    发明授权
    Method of forming air gap dielectric spaces between semiconductor leads 失效
    在半导体引线之间形成气隙电介质空间的方法

    公开(公告)号：US5407860A

    公开(公告)日：1995-04-18

    申请号：US250064

    申请日：1994-05-27

    申请人： Richard A. Stoltz ,  Howard Tigelaar ,  Chih-Chen Cho

    发明人： Richard A. Stoltz ,  Howard Tigelaar ,  Chih-Chen Cho

    IPC分类号： H01L21/768 ,  H01L21/44

    CPC分类号： H01L21/7682 ,  H01L21/76834

    摘要： This is a device and method of forming air gaps in between metal leads comprising. The method comprising: forming the metal leads 51-53 on an insulating layer 50; depositing a nonwetting material layer 56 on the metal leads 51-53 and the insulating layer 50; anisotropically etching the nonwetting material 56 to remove the nonwetting material 56 from open areas and leaving the nonwetting material on side walls of the metal leads 51-53; and depositing a dielectric layer 60 on top of the metal leads 51-53, and the insulating layer 50, whereby the air gaps 58 are produced in between the metal leads 51-53 below the dielectric layer 60. The method may include anisotropically etching at an angle, not vertical, whereby the etching allows removal of the nonwetting material from exterior side walls of the metal leads. The method may also include leaving the nonwetting material layer in between the metal leads. The deposition of the dielectric layer may utilize plasma deposition and spin on techniques.

    摘要翻译： 这是在金属引线之间形成气隙的装置和方法，包括。 该方法包括：在绝缘层50上形成金属引线51-53; 在金属引线51-53和绝缘层50上沉积非润湿材料层56; 各向异性地蚀刻不润湿材料56以从开放区域除去非润湿材料56，并将非润湿材料留在金属引线51-53的侧壁上; 以及在金属引线51-53和绝缘层50的顶部上沉积电介质层60，由此在电介质层60下方的金属引线51-53之间产生气隙58.该方法可以包括各向异性蚀刻 角度不垂直，由此蚀刻允许从金属引线的外侧壁去除非润湿材料。 该方法还可以包括将非润湿材料层留在金属引线之间。 电介质层的沉积可以利用等离子体沉积和旋转技术。

    "> Fluorosurfactant in photoresist for amorphous
    56.
    发明授权
    Fluorosurfactant in photoresist for amorphous "Teflon" patterning 失效
    无定形“特氟龙”图案的光致抗蚀剂中的含氟表面活性剂

    公开(公告)号：US5403437A

    公开(公告)日：1995-04-04

    申请号：US148773

    申请日：1993-11-05

    申请人： Howard R. Beratan ,  Chih-Chen Cho ,  Scott R. Summerfelt

    发明人： Howard R. Beratan ,  Chih-Chen Cho ,  Scott R. Summerfelt

    IPC分类号： B05D1/40 ,  B05D7/00 ,  B32B27/30 ,  C09D127/12 ,  G03F7/004 ,  G03F7/085 ,  H01L21/312 ,  H01L21/822 ,  H01L27/04 ,  B44C1/22 ,  B29C37/00

    CPC分类号： G03F7/085 ,  G03F7/0046

    摘要： This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The method comprising: depositing an TFE AF layer 36 on a substrate; combining a fluorosurfactant with a first material to produce a second material 38; and depositing the second material 38 on the TFE AF layer 36. The method may include: patterning and etching the second material; removing the second material; and forming a third material 42 on the TFE AF layer 44. The third material may be a metal or a semiconductor. The ZFSNF fluorosurfactant may be combined with a photoresist and then patterned and etched. The TFE AF layer may also be heated. A second coating of the second material may also be added.

    摘要翻译： 这是一种形成这种装置和方法，其中该装置具有非晶“TEFLON”（TFE AF）层。 该方法包括：在衬底上沉积TFE AF层36; 将含氟表面活性剂与第一材料组合以产生第二材料38; 并将第二材料38沉积在TFE AF层36上。该方法可以包括：图案化和蚀刻第二材料; 去除第二种材料; 并在TFE AF层44上形成第三材料42.第三材料可以是金属或半导体。 ZFSNF含氟表面活性剂可与光致抗蚀剂组合，然后进行图案化和蚀刻。 TFE AF层也可以被加热。 还可以添加第二材料的第二涂层。

    Isopropanol catalyst for copper chemical vapor deposition
    58.
    发明授权
    Isopropanol catalyst for copper chemical vapor deposition 失效
    用于铜化学气相沉积的异丙醇催化剂

    公开(公告)号：US5087485A

    公开(公告)日：1992-02-11

    申请号：US567491

    申请日：1990-08-14

    申请人： Chih-Chen Cho

    发明人： Chih-Chen Cho

    IPC分类号： C23C16/18 ,  C23C16/20

    CPC分类号： C23C16/20 ,  C23C16/18

    摘要： An alcohol having an alpha hydrogen with the remaining groupings attached to the carbon atom being either hydrogen or an alkyl group having from 1 to 5 carbon atoms, preferably isopropanol, is added to the flow stream of a copper chelate gas, preferably a copper diketonate, the copper diketonate preferably being Cu(hfac).sub.2 or a composition identical thereto wherein one or more of the fluorine atoms is replaced by one of hydrogen atoms, and alkyl group having from one to five carbon atoms and a gas, preferably a reducing agent, preferably hydrogen. As a second embodiment, some or all of the copper can be replaced by aluminum to provide either Al(hfac).sub.3 or a combination of Cu(hfac).sub.2 and Al(hfac).sub.3. While the flow rates of each of the components is not critical and will vary with materials used and conditions, a flow rate for the reducing agent of from about 15 to about 60 SCCM and preferably 20 SCCM is appropriate with the amount of alcohol and metal chelate entering the flow stream being determined by the vapor pressure of the material involved. The flow stream enters as standard CVD reactor wherein the sample to be coated with copper is heated, thereby causing the copper to be deposited only on the heated area. The other reaction products are gaseous and are removed from the reactor by means of a pump or the like as is well known.

    摘要翻译： 在铜螯合气体，优选铜二酮酸盐的流动流中加入具有连接到碳原子上的剩余基团的醇为氢或具有1至5个碳原子的烷基，优选异丙醇的醇， 铜二酮酸盐优选为Cu（hfac）2或与其相同的组成，其中一个或多个氟原子被氢原子和具有1至5个碳原子的烷基和气体，优选还原剂代替， 优选氢。 作为第二实施方案，可以用铝代替一些或全部铜，以提供Al（hfac）3或Cu（hfac）2和Al（hfac）3的组合。 虽然每个组分的流速不是关键的，并且将随着所用的材料和条件而变化，但还原剂的流速为约15至约60SCCM，优选为20SCCM，适用于醇和金属螯合物的量 进入流动流由所涉材料的蒸汽压力决定。 流动物流作为标准CVD反应器进入，其中待涂覆铜的样品被加热，从而使铜沉积在加热区域上。 其他反应产物是气态的，并且通过泵等将其从反应器中除去，如众所周知的那样。

    OPERATING METHOD OF ONE-TIME PROGRAMMABLE READ ONLY MEMORY
    59.
    发明申请
    OPERATING METHOD OF ONE-TIME PROGRAMMABLE READ ONLY MEMORY 有权
    一次性编程只读存储器的操作方法

    公开(公告)号：US20080316791A1

    公开(公告)日：2008-12-25

    申请号：US12191844

    申请日：2008-08-14

    申请人： Ching-Sung Yang ,  Wei-Zhe Wong ,  Chih-Chen Cho

    发明人： Ching-Sung Yang ,  Wei-Zhe Wong ,  Chih-Chen Cho

    IPC分类号： G11C17/00 ,  G11C7/00

    CPC分类号： H01L27/112 ,  H01L27/11206

    摘要： The present invention provides a method of operating a one-time programmable read only memory (OTPROM). The OTPROM includes at least a select transistor, an electrode and a dielectric layer disposed on a substrate, wherein the electrode is set up on the source region of the select transistor and the dielectric layer is set up between the electrode and the source region. The method of operating the one-time programmable read only memory includes performing a programming operation to write a digital data value of ‘1’ into the memory and performing a programming operation to write a digital data value of ‘0’ into the memory.

    摘要翻译： 本发明提供一种操作一次性可编程只读存储器（OTPROM）的方法。 OTPROM至少包括设置在基板上的选择晶体管，电极和电介质层，其中电极设置在选择晶体管的源极区域上，电介质层被设置在电极和源极区域之间。 操作一次性可编程只读存储器的方法包括执行编程操作以将数字数据值“1”写入存储器，并执行编程操作以将数字数据值“0”写入存储器。

    OPERATING METHOD OF NON-VOLATILE MEMORY
    60.
    发明申请
    OPERATING METHOD OF NON-VOLATILE MEMORY 审中-公开
    非易失性存储器的操作方法

    公开(公告)号：US20080279001A1

    公开(公告)日：2008-11-13

    申请号：US11927702

    申请日：2007-10-30

    申请人： Saysamone Pittikoun ,  Houng-Chi Wei ,  Chih-Chen Cho

    发明人： Saysamone Pittikoun ,  Houng-Chi Wei ,  Chih-Chen Cho

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： H01L29/42324 ,  G11C16/0483 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114

    摘要： A non-volatile memory having a plurality of memory units each including a select unit and a memory unit is provided. The select unit is disposed on the substrate. The memory cell is disposed on one sidewall of the select unit and the substrate. The select unit includes a gate disposed on the substrate and a first gate dielectric layer disposed between the gate and the substrate. The memory cell includes a pair of floating gate disposed on the substrate, a control gate disposed on the upper surface of the floating gates, an inter-gate dielectric layer disposed between the floating gate and the control gate, a tunneling dielectric layer disposed between the floating gate and the substrate and a second gate dielectric layer disposed between the bottom of the control gate and the substrate.

    摘要翻译： 提供具有多个存储单元的非易失性存储器，每个存储器单元包括选择单元和存储器单元。 选择单元设置在基板上。 存储单元设置在选择单元和基板的一个侧壁上。 选择单元包括设置在基板上的栅极和设置在栅极和基板之间的第一栅极电介质层。 所述存储单元包括设置在所述衬底上的一对浮置栅极，设置在所述浮置栅极的上表面上的控制栅极，设置在所述浮置栅极和所述控制栅极之间的栅极间电介质层， 浮置栅极和衬底以及设置在控制栅极的底部和衬底之间的第二栅极电介质层。