Semiconductor device and method of manufacturing the same
    53.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07994506B2

    公开(公告)日:2011-08-09

    申请号:US12635752

    申请日:2009-12-11

    IPC分类号: H01L29/04

    摘要: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

    摘要翻译: 具有重量轻,柔性(弯曲)和整体薄的半导体元件(薄膜晶体管,薄膜二极管,硅PIN结的光电转换元件或硅电阻元件)的半导体器件是 以及制造半导体器件的方法。 在本发明中,元件不形成在塑料膜上。 相反,使用诸如基板的平板作为形式,衬底(第三衬底(17))和包括元件(剥离层(13))的层之间的空间填充有凝结剂(通常为粘合剂),凝固剂 用作第二接合构件(16),并且在粘合剂凝固之后剥离用作形式的基板(第三基板(17)),以通过凝固的粘合剂保持包括元件(剥离层(13))的层) (第二接合部件(16))。 以这种方式,本发明实现了薄膜的薄化和重量的减轻。

    Semiconductor Device and Method of Manufacturing the Same
    55.
    发明申请
    Semiconductor Device and Method of Manufacturing the Same 有权
    半导体器件及其制造方法

    公开(公告)号:US20100148179A1

    公开(公告)日:2010-06-17

    申请号:US12635752

    申请日:2009-12-11

    IPC分类号: H01L33/00

    摘要: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

    摘要翻译: 具有重量轻,柔性(弯曲)和整体薄的半导体元件(薄膜晶体管,薄膜二极管,硅PIN结的光电转换元件或硅电阻元件)的半导体器件是 以及制造半导体器件的方法。 在本发明中,元件不形成在塑料膜上。 相反,使用诸如基板的平板作为形式,衬底(第三衬底(17))和包括元件(剥离层(13))的层之间的空间填充有凝结剂(通常为粘合剂),凝固剂 用作第二接合构件(16),并且在粘合剂凝固之后剥离用作形式的基板(第三基板(17)),以通过凝固的粘合剂保持包括元件(剥离层(13))的层) (第二接合部件(16))。 以这种方式,本发明实现了薄膜的薄化和重量的减轻。

    Semiconductor device, method of manufacturing the same, and method of designing the same
    58.
    发明授权
    Semiconductor device, method of manufacturing the same, and method of designing the same 有权
    半导体装置及其制造方法及其设计方法

    公开(公告)号:US07344925B2

    公开(公告)日:2008-03-18

    申请号:US11064820

    申请日:2005-02-25

    摘要: An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

    摘要翻译: 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法,可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件,每个单元具有多个具有相同沟道长度方向的TFT,其中多个单元沿着沟道长度方向形成多个列,其中岛状半导体 通过在沟道长度方向上行进的激光,使多个TFT中的每一个的膜结晶,其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起,并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

    Semiconductor Device and Method of Manufacturing the Same
    60.
    发明申请
    Semiconductor Device and Method of Manufacturing the Same 有权
    半导体器件及其制造方法

    公开(公告)号:US20070212853A1

    公开(公告)日:2007-09-13

    申请号:US11743695

    申请日:2007-05-03

    IPC分类号: H01L21/02

    摘要: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

    摘要翻译: 具有重量轻,柔性(弯曲)和整体薄的半导体元件(薄膜晶体管,薄膜二极管,硅PIN结的光电转换元件或硅电阻元件)的半导体器件是 以及制造半导体器件的方法。 在本发明中,元件不形成在塑料膜上。 相反,使用诸如基板的平板作为形式,衬底(第三衬底(17))和包括元件(剥离层(13))的层之间的空间填充有凝结剂(通常为粘合剂),凝固剂 用作第二接合构件(16),并且在粘合剂凝固之后剥离用作形式的基板(第三基板(17)),以通过凝固的粘合剂保持包括元件(剥离层(13))的层) (第二接合部件(16))。 以这种方式,本发明实现了薄膜的薄化和重量的减轻。