Copper fine powder and method for preparing the same
    52.
    发明授权
    Copper fine powder and method for preparing the same 失效
    铜精细粉及其制备方法

    公开(公告)号:US06391087B1

    公开(公告)日:2002-05-21

    申请号:US09714198

    申请日:2000-11-17

    IPC分类号: B22F924

    CPC分类号: B22F9/24 B22F1/0011 H05K1/095

    摘要: Copper fine powder has an electrical resistance in its powdery state of not more than 1×10−3 &OHgr;·cm; a BET specific surface area ranging from 0.15 to 0.3 m2/g; a tap density of not less than 4.5 g/cc; a product of the tap density and the particle size, of not less than 13, the particle size being calculated from the specific surface area and; a particle size distribution observed in the microtrack measurement as expressed in terms of D50 and D90 ranging from 4 to 7 &mgr;m and 9 to 11 &mgr;m, respectively; and a weight loss through hydrogen-reduction of not more than 0.30%. The copper fine powder is prepared by adding an alkali hydroxide to an aqueous copper salt solution containing divalent copper ions maintained at not less than 55° C. in an amount of not less than the chemical equivalent to form cupric oxide; then gradually adding a reducing sugar to the reaction system while maintaining the temperature of the system to not less than 55° C. to reduce the cupric oxide to cuprous oxide; followed by filtration and washing, re-suspension to form a slurry, gradual addition of a hydrazine reducing agent to the slurry in the presence of a pH buffer capable of maintaining the pH to 5.5 to 8.5 to thus reduce the cuprous oxide to metal copper.

    摘要翻译: 铜精细粉末的电阻在其粉末状态不超过1×10-3欧米加•厘米; BET比表面积为0.15〜0.3m2 / g; 振实密度不小于4.5g / cc; 振实密度和粒径的乘积不小于13,粒径由比表面积计算; 在微轨迹测量中观察到的粒度分布如D50和D90所示,分别为4至7μm和9至11μm; 并且通过氢还原的重量减少不大于0.30%。 通过向不低于55℃的含有二价铜离子的铜盐水溶液中加入碱金属氢氧化物,其量不小于形成氧化铜的化学当量; 然后逐渐向反应体系中加入还原糖,同时将体系温度保持在不低于55℃,将氧化铜还原为氧化亚铜; 然后过滤和洗涤,再悬浮以形成浆料,在能够将pH维持在5.5至8.5的pH缓冲剂存在下,向该浆液中逐渐加入肼还原剂,从而将氧化亚铜还原成金属铜。

    Method of preparing diamond semiconductor
    53.
    发明授权
    Method of preparing diamond semiconductor 有权
    制备金刚石半导体的方法

    公开(公告)号:US06376276B1

    公开(公告)日:2002-04-23

    申请号:US09644671

    申请日:2000-08-24

    IPC分类号: H01L2100

    摘要: There is provided a method of reliably preparing a diamond semiconductor by irradiating diamond with a corpuscular ray. In this method, when a diamond substrate is irradiated with a corpuscular ray, the diamond substrate is maintained at a temperature of 300° C. to 2000° C., the angle of the surface of the diamond substrate irradiated is set within −20° to +20° to the (001) crystal plane of the diamond substrate, and the angle of the direction of the corpuscular ray is set within −20° to +20° to the crystal orientation of the diamond substrate. Preferably, the direction of the corpuscular ray forms an angle of 3° to 10° with the crystal orientation.

    摘要翻译: 提供了一种通过用红外线照射金刚石来可靠地制备金刚石半导体的方法。 在这种方法中,当金刚石基底被辐照时,将金刚石基底保持在300℃至2000℃的温度,将金刚石基底的表面的角度设置在-20° 与金刚石基板的(001)晶面成+ 20°,并且将红外线的方向的角度设定在与金刚石基板的<001>晶体取向成-20°〜+ 20°的范围内。 优选地,颗粒射线的方向与<001>晶体取向形成3°至10°的角度。

    Slotless motor
    54.
    发明授权
    Slotless motor 失效
    无槽电机

    公开(公告)号:US5313131A

    公开(公告)日:1994-05-17

    申请号:US962662

    申请日:1992-10-19

    CPC分类号: H02K1/12 H02K3/04 H02K3/47

    摘要: A slotless motor has a sufficiently small gap between a stator and a rotor, and improves characteristics of the torque and the power factor. Accordingly, the slotless motor comprises stator cores having no slots, coils forming revolving magnetic fields in the stator cores, and rotors having a permanent magnet. The coils are disposed along the stator cores cylindrically and constructed in one layer. Each of the coils forms a part which decreases the distribution of the number of turns in the direction of a diameter of the stator cores, and adjoining coils pile on each other at the part in the direction of the diameter of the stator cores. The distribution changes in response to a predetermined range.

    摘要翻译: 无槽电动机在定子和转子之间具有足够小的间隙,并且改善了扭矩和功率因数的特性。 因此,无槽电动机包括没有槽的定子铁心,在定子铁心中形成旋转磁场的线圈,以及具有永久磁铁的转子。 线圈沿着定子铁芯圆柱形地设置并且构造成一层。 每个线圈形成一个部件,它减少定子铁芯直径方向上的匝数分布,以及邻接的线圈在定子铁心的直径方向的一部分彼此堆叠。 分布响应于预定范围而变化。

    Operation data-recording system for a machine
    56.
    发明授权
    Operation data-recording system for a machine 失效
    机器操作数据记录系统

    公开(公告)号:US4757454A

    公开(公告)日:1988-07-12

    申请号:US766906

    申请日:1985-08-16

    IPC分类号: G01D9/00 G07C5/08 G06F15/20

    CPC分类号: G01D9/005 G07C5/0858

    摘要: This invention provides a system for recording operation data of a machine, wherein a program for converting signals stored through a sensor or measuring means into operation data in conformity with the increase or alteration of the sensor or measuring means due to the operation status of the machine or to the type of the component of the machine is preliminarily stored in one or separate card-type external memory or other transportable external memory. The terminal of the system is designed to allow an connection of various kinds of the sensor or measuring means. Accordingly, it is possible to conduct processing and recording of various kinds of operation data by exchanging the external memory stored with a prescribed operation data-processing program, or by changing the writing of the program. It is also possible to record operation data in the external memory stored with the operation data-processing program after the program is read out to simplify the operation of an operator.

    摘要翻译: 本发明提供了一种用于记录机器的操作数据的系统,其中用于通过传感器或测量装置存储的信号转换成与由于机器的操作状态而增加或改变传感器或测量装置的操作数据的程序 或机器的部件的类型预先存储在一个或单独的卡式外部存储器或其他可运输的外部存储器中。 该系统的端子被设计成允许连接各种传感器或测量装置。 因此,可以通过交换用规定的操作数据处理程序存储的外部存储器或通过改变程序的写入来进行各种操作数据的处理和记录。 在读出程序之后,还可以将操作数据记录在与操作数据处理程序一起存储的外部存储器中,以简化操作者的操作。

    SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF, AND DISPLAY DEVICE
    59.
    发明申请
    SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF, AND DISPLAY DEVICE 审中-公开
    半导体器件及其制造方法和显示器件

    公开(公告)号:US20120256185A1

    公开(公告)日:2012-10-11

    申请号:US13516512

    申请日:2010-12-14

    摘要: The semiconductor device (100A) of the present invention includes an insulating substrate (11), and a first and a second thin film transistors (10A and 10B) supported by the insulating substrate (11). The first and the second thin film transistors (10A and 10B) have respective channel regions (33a and 33b). The channel region (33a) of the first thin film transistor (10A) is formed in a first crystalline semiconductor layer (30A) having a first average grain diameter. The channel region (33b) of the second thin film transistor (10B) is formed in a second crystalline semiconductor layer (30B) having a second average grain diameter which is smaller than the first average grain diameter. The thickness of the first crystalline semiconductor layer (30A) is larger than the thickness of the second crystalline semiconductor layer (30B).

    摘要翻译: 本发明的半导体器件(100A)包括绝缘基板(11)和由绝缘基板(11)支撑的第一和第二薄膜晶体管(10A和10B)。 第一和第二薄膜晶体管(10A和10B)具有各自的沟道区域(33a和33b)。 第一薄膜晶体管(10A)的沟道区域(33a)形成在具有第一平均晶粒直径的第一晶体半导体层(30A)中。 第二薄膜晶体管(10B)的沟道区域(33b)形成在第二平均晶粒直径小于第一平均晶粒直径的第二晶体半导体层(30B)中。 第一晶体半导体层(30A)的厚度大于第二晶体半导体层(30B)的厚度。