公开(公告)号：US20120153253A1

公开(公告)日：2012-06-21

申请号：US13218827

申请日：2011-08-26

申请人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

公开(公告)号：US20120132943A1

公开(公告)日：2012-05-31

申请号：US13204013

申请日：2011-08-05

申请人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

发明人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

IPC分类号： H01L33/58

CPC分类号： H01L33/22 ,  H01L33/325 ,  H01L33/40

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，电极，p型半导体层和发光层。 p型半导体层设置在n型半导体层和电极之间，并且包括与电极接触的p侧接触层。 发光层设置在n型和p型半导体层之间。 p侧接触层包括具有垂直于从n型半导体层朝向p型半导体层的第一方向的平面的平坦部分和从平坦部分向电极突出的多个突出部分。 沿着第一方向的多个突出部分的高度小于从发光层发射的光的主波长的四分之一。 平面内的多个突出部的密度为5×10 7 / cm 2以上2×10 8 / cm 2以下。

公开(公告)号：US20120056157A1

公开(公告)日：2012-03-08

申请号：US13222500

申请日：2011-08-31

申请人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3407 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。 阻挡层中的至少一个包括第一和第二部分层。 第一部分层设置在n型层的一侧。 第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。 阱层中的至少一个包括第三和第四部分层。 第三部分层设置在n型层的一侧。 第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

公开(公告)号：US08093083B1

公开(公告)日：2012-01-10

申请号：US13029416

申请日：2011-02-17

申请人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法。 该器件包括包含氮化物半导体的晶体层。 晶体层含有In和Ga原子。 该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。 晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。 第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。 （1-1 / xv）/（1-1 / xs）小于0.1。

公开(公告)号：US07683390B2

公开(公告)日：2010-03-23

申请号：US12036409

申请日：2008-02-25

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US07531397B2

公开(公告)日：2009-05-12

申请号：US11969079

申请日：2008-01-03

申请人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

发明人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

IPC分类号： H01L21/36

CPC分类号： H01L33/32 ,  C30B25/18 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/861 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.

摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。

公开(公告)号：US20060043419A1

公开(公告)日：2006-03-02

申请号：US11185768

申请日：2005-07-21

申请人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

发明人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

IPC分类号： H01L31/109

CPC分类号： H01L33/32 ,  C30B25/18 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/861 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.

摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。

公开(公告)号：US08878213B2

公开(公告)日：2014-11-04

申请号：US13220072

申请日：2011-08-29

申请人： Naoharu Sugiyama ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L33/22 ,  H01L33/08

CPC分类号： H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。 发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。 透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

公开(公告)号：US08835950B2

公开(公告)日：2014-09-16

申请号：US13398170

申请日：2012-02-16

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22 ,  H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US08835901B2

公开(公告)日：2014-09-16

申请号：US13030440

申请日：2011-02-18

申请人： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/04 ,  H01L33/12

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。 发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。 多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。 第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。 第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。