公开(公告)号：US11942337B2

公开(公告)日：2024-03-26

申请号：US17063820

申请日：2020-10-06

申请人： SEMES CO., LTD.

发明人： Eui Sang Lim ,  Young Hun Lee ,  Jinwoo Jung ,  Miso Park ,  Byongwook Ahn ,  Yong Hee Lee

IPC分类号： H01L21/67 ,  H01J37/32

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/334

摘要： The apparatus includes a support unit to support the substrate in a treatment space of a process chamber, a first fluid supply unit to supply a supercritical fluid having an organic solvent dissolved in the supercritical fluid, to the treatment space, a second fluid supply unit to supply the supercritical fluid having no organic solvent dissolved in the supercritical fluid, to the treatment space, an exhaust unit to exhaust the treatment space, a controller to control the first fluid supply unit, the second fluid supply unit, and the exhaust unit. The controller controls the first and second fluid supply units such that the supercritical fluid having no organic solvent dissolved in the supercritical fluid is supplied to the treatment space through the second fluid supply unit, after the supercritical fluid mixed with the organic solvent is supplied to the treatment space through the first fluid supply unit.

公开(公告)号：US20240096663A1

公开(公告)日：2024-03-21

申请号：US18126933

申请日：2023-03-27

申请人： SEMES CO., LTD.

发明人： Soo Han SONG ,  Jung Bong CHOI ,  Kang Seop YUN ,  Young Il LEE ,  Min Ok KANG

IPC分类号： H01L21/67

CPC分类号： H01L21/67115 ,  H01L21/6708

摘要： Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

公开(公告)号：US20240091819A1

公开(公告)日：2024-03-21

申请号：US18117592

申请日：2023-03-06

申请人： SEMES CO., LTD.

发明人： Ju Hwan LEE ,  Hyeon Jun LEE ,  So Young PARK ,  Myung A JEON

IPC分类号： B08B3/02 ,  B08B13/00

CPC分类号： B08B3/022 ,  B08B13/00 ,  H01L21/67051

摘要： Proposed are a substrate processing apparatus having improved substrate drying performance by separately providing a chemical liquid supply nozzle and a gas supply nozzle; and a substrate processing method.

公开(公告)号：US11927886B2

公开(公告)日：2024-03-12

申请号：US17194174

申请日：2021-03-05

申请人： SEMES CO., LTD.

发明人： Doo Young Oh ,  Joon Jae Lee

IPC分类号： H01L21/02 ,  B05C9/12 ,  B05C11/10 ,  G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/67 ,  H01L21/677

CPC分类号： G03F7/2041 ,  B05C9/12 ,  B05C11/1044 ,  G03F7/0035 ,  G03F7/0048 ,  G03F7/162 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67745

摘要： Disclosed are a substrate treating apparatus and a substrate treating method. According to an embodiment of the inventive concept, the purge operation of the purge nozzle is performed while the nozzle arm is moved from the first substrate support member to the second substrate support member, it hardly influences the operation of treating the substrate while the nozzle arm is moved from the first substrate support member to the second substrate support member. According to an embodiment of the inventive concept, the substrate treating apparatus may perform an operation of purging the photosensitive liquid nozzle while the treatment liquid supply unit performs a process of supplying the photosensitive liquid to the substrate. Accordingly, because the operation of purging the photosensitive liquid nozzle is performed at the same time when the substrate treating apparatus performs a process, productivity may be improved.

公开(公告)号：US11923219B2

公开(公告)日：2024-03-05

申请号：US16912762

申请日：2020-06-26

申请人： SEMES CO., LTD.

发明人： Youngseop Choi ,  Young Hun Lee ,  Yong-Jun Seo ,  Bok Kyu Lee ,  Miso Park

IPC分类号： H01L21/67 ,  B08B3/08 ,  B08B7/04 ,  B08B13/00

CPC分类号： H01L21/67248 ,  B08B3/08 ,  B08B7/04 ,  B08B13/00 ,  H01L21/67051 ,  H01L21/67103 ,  H01L21/6719

摘要： The inventive concept relates to an apparatus for treating a substrate. In an embodiment, the apparatus includes a process chamber having a process space in which the substrate is treated with a fluid in a supercritical state, a support unit that supports the substrate in the process space, a fluid supply unit that supplies the fluid into the process space, a filler member disposed to face the substrate placed on the support unit in the process space, and a measurement unit that measures a state in the process space, the measurement unit being provided in the filler member.

公开(公告)号：US11923213B2

公开(公告)日：2024-03-05

申请号：US17128159

申请日：2020-12-20

申请人： SEMES CO., LTD.

发明人： Tae Shin Kim ,  Young Dae Chung ,  Ji Hoon Jeong ,  Jee Young Lee ,  Won Geun Kim

IPC分类号： H01L23/00 ,  B08B3/10 ,  B23K26/00 ,  B23K26/06 ,  B23K26/064 ,  B23K26/352 ,  G02B7/02 ,  G02B27/09 ,  H01L21/02 ,  H01L21/268 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687 ,  B23K101/40 ,  B23K103/00

CPC分类号： H01L21/67115 ,  B08B3/10 ,  B23K26/0006 ,  B23K26/0604 ,  B23K26/0626 ,  B23K26/064 ,  B23K26/352 ,  G02B7/028 ,  G02B27/0916 ,  G02B27/0955 ,  H01L21/02057 ,  H01L21/268 ,  H01L21/67051 ,  H01L21/67248 ,  H01L21/68764 ,  H01L22/20 ,  B23K2101/40 ,  B23K2103/56

摘要： Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

公开(公告)号：US20240072142A1

公开(公告)日：2024-02-29

申请号：US18218751

申请日：2023-07-06

申请人： SEMES CO., LTD.

发明人： Thomas Jongwan KWON ,  Hae-won CHOI ,  Yunsang KIM

IPC分类号： H01L29/423 ,  H01L21/3213

CPC分类号： H01L29/4236 ,  H01L21/32137

摘要： Provided is a method of manufacturing a semiconductor device, the method including steps of providing a semiconductor substrate having one or more trenches, forming a gate insulating layer on the semiconductor substrate inside the trenches, and forming a buried gate electrode layer on the gate insulating layer to at least partially fill the trenches, wherein the step of forming the buried gate electrode layer includes a step of repeating a unit cycle a plurality of times, the unit cycle including an atomic layer deposition (ALD) process for forming a conductive layer on the gate insulating layer to serve as the buried gate electrode layer, and an atomic layer etching (ALE) process for preferentially etching portions of the conductive layer formed near the trenches and portions of the conductive layer formed on upper ends of the trenches over other portions of the conductive layer inside the trenches.

公开(公告)号：US11915905B2

公开(公告)日：2024-02-27

申请号：US16918299

申请日：2020-07-01

申请人： SEMES CO., LTD.

发明人： Hyoungkyu Son ,  Yu Dong Han ,  Hyeon Gyu Kim ,  Seon Ok Kim

IPC分类号： H01J37/32 ,  H01L21/683 ,  H01J37/20

CPC分类号： H01J37/20 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/32715 ,  H01L21/683 ,  H01J2237/334

摘要： A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod.

公开(公告)号：US20240064967A1

公开(公告)日：2024-02-22

申请号：US18206490

申请日：2023-06-06

申请人： SEMES CO., LTD.

发明人： Chengyeh Hsu ,  Thomas Jongwan Kwon ,  Yunsang Kim ,  Haewon Choi

IPC分类号： H10B12/00

CPC分类号： H10B12/482 ,  H10B12/488 ,  H10B12/315

摘要： A semiconductor device includes bit lines each extending in a first direction on a substrate and spaced apart from each other in a second direction, semiconductor patterns disposed on each of the bit lines and including a first semiconductor pattern disposed on a first bit line, and a second semiconductor pattern arranged to be offset in the second direction from the first semiconductor pattern on the first bit line, word lines each extending in the second direction and surrounding a sidewall of each of the semiconductor patterns, the word lines including a first word line extending in the second direction and surrounding the first semiconductor pattern, and a second word line spaced apart in the first direction from the first word line and extending in the second direction while surrounding the second semiconductor pattern, and storage nodes respectively disposed on the semiconductor patterns.

公开(公告)号：US20240059497A1

公开(公告)日：2024-02-22

申请号：US18340569

申请日：2023-06-23

申请人： SEMES CO., LTD.

发明人： In Su JO ,  Tae Uk PARK

IPC分类号： B65G43/02 ,  H01L21/677 ,  H01L21/67

CPC分类号： B65G43/02 ,  H01L21/67715 ,  H01L21/67259 ,  H01L21/67733 ,  H01L21/67736 ,  B65G2812/99 ,  B65G2811/0678 ,  B65G2201/0297

摘要： A transfer system according to the present invention comprises a first travel rail including a first merging section; a second travel rail merging the first travel rail at a merging point and including a second merging section corresponding to the first merging section; a transfer/loading area defined in the second merging section and located upstream of the merging point; and a controller (OCS) for controlling an operation of at least one transfer vehicle moving along the first travel rail and the second travel rail, wherein a second transfer vehicle moves along the second travel rail and enters the transfer/loading area, the second transfer vehicle starts a transfer/loading operation in the transfer/loading area, the first transfer vehicle moves along the first travel rail and enters the first merging section, and the first transfer vehicle passes through the merging point before the second transfer vehicle.