公开(公告)号：US20080057675A1

公开(公告)日：2008-03-06

申请号：US11842104

申请日：2007-08-20

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: H01L21/46

CPC classification number: H01L21/67092 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US20080038901A1

公开(公告)日：2008-02-14

申请号：US11841970

申请日：2007-08-20

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: H01L21/30

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L21/2007

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。

公开(公告)号：US20070123013A1

公开(公告)日：2007-05-31

申请号：US11627924

申请日：2007-01-26

Applicant: FRANCOIS HENLEY ,  Nathan Cheung

Inventor： FRANCOIS HENLEY ,  Nathan Cheung

IPC: H01L21/425

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US20060280961A1

公开(公告)日：2006-12-14

申请号：US11314359

申请日：2005-12-22

Applicant: Takayuki Yamada ,  Kazuaki Tabata

Inventor： Takayuki Yamada ,  Kazuaki Tabata

IPC: C25D5/10 ,  B32B9/00 ,  B32B3/00

CPC classification number: C25D5/12 ,  B32B3/085 ,  B32B15/00 ,  B32B15/04 ,  B32B15/043 ,  B32B15/20 ,  B32B2255/06 ,  B32B2255/205 ,  B32B2307/202 ,  B32B2457/00 ,  B81C99/008 ,  B81C99/009 ,  B81C2201/0191 ,  B81C2201/0197 ,  C23C26/00 ,  C23C28/021 ,  C23C28/023 ,  C25D5/022 ,  C25D5/16 ,  Y10T29/49128 ,  Y10T29/49146 ,  Y10T29/49155 ,  Y10T29/49169 ,  Y10T29/49172 ,  Y10T428/12493 ,  Y10T428/12882 ,  Y10T428/24917 ,  Y10T428/24983

Abstract: A laminated structure includes: a plurality of first electroconductive films each having a prescribed hardness; and a plurality of second electroconductive films each having a hardness that is lower than the prescribed hardness. The first and second electroconductive films are laminated alternately.

Abstract translation: 叠层结构包括：具有规定硬度的多个第一导电膜; 以及多个第二导电膜，其各自具有低于规定硬度的硬度。 第一和第二导电膜交替层叠。

公开(公告)号：US20060216849A1

公开(公告)日：2006-09-28

申请号：US11434930

申请日：2006-05-17

Applicant: Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/30

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

公开(公告)号：US07075104B2

公开(公告)日：2006-07-11

申请号：US10800148

申请日：2004-03-12

Applicant: Sadeg M. Faris

Inventor： Sadeg M. Faris

IPC: H01L35/24

CPC classification number: B81C1/00071 ,  B81C1/0038 ,  B81C2201/019 ,  B81C2201/0191

Abstract: A novel method of manufactring a microchannel plate (“MCP”) is disclosed. The method comprises the steps of ion implantation of a substrate, the subsequent formation of channels paterned on the surface of the substrate and bonding of the subsequent substrate to a handle wafer. The layers are subsequently cleaved and the steps repeated until a MCP structure is achieved. The resulting MCP structure is cost-effective as compared to conventional manufacturing processes and the resulting MCP structure exhibits a funneling effect. The MCP structure may also be used for optical signal amplification for a biochip array.

Abstract translation: 公开了一种制造微通道板（“MCP”）的新颖方法。 该方法包括以下步骤：衬底的离子注入，随后形成在衬底的表面上引导的通道并将随后的衬底接合到处理晶片。 这些层随后被切割，并重复这些步骤，直到达到MCP结构。 所得到的MCP结构与传统的制造工艺相比具有成本效益，并且所得到的MCP结构表现出漏斗效应。 MCP结构也可用于生物芯片阵列的光信号放大。

公开(公告)号：US20060141747A1

公开(公告)日：2006-06-29

申请号：US11281042

申请日：2005-11-16

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/425

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20060084012A1

公开(公告)日：2006-04-20

申请号：US10965279

申请日：2004-10-14

Applicant: Ralph Nuzzo ,  William Childs ,  Michael Motala ,  Keon Lee

Inventor： Ralph Nuzzo ,  William Childs ,  Michael Motala ,  Keon Lee

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/0191 ,  B81C2203/038 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/34 ,  G03F7/346

Abstract: A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

Abstract translation: 制造微结构的方法包括选择性地激活含硅弹性体的表面的一部分，使活化部分与物质接触，并且将活化部分和物质接合，使得表面的活化部分和物质的活性部分 与活化部分的接触不可逆地附着。 选择性激活可以通过将掩模定位在含硅弹性体的表面上，并用UV辐射照射暴露部分来实现。

公开(公告)号：US20040241902A1

公开(公告)日：2004-12-02

申请号：US10755007

申请日：2004-01-08

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Oliver Rayssac

IPC: H01L021/44

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

Abstract translation: 一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。 应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。 该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

公开(公告)号：US06770337B2

公开(公告)日：2004-08-03

申请号：US10356047

申请日：2003-01-31

Applicant: Mark K. Debe ,  Martin B. Wolk

Inventor： Mark K. Debe ,  Martin B. Wolk

IPC: B41M530

CPC classification number: B41M5/38207 ,  B41M5/385 ,  B41M5/42 ,  B81C1/00031 ,  B81C2201/0191 ,  H01J7/24 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2221/68368 ,  H05K3/046 ,  Y10S977/701 ,  Y10S977/833 ,  Y10S977/89

Abstract: Articles having a component with a surface defining microstructured features can be formed using thermal transfer elements. One example of a suitable thermal transfer element includes a microstructured layer having a surface defining microstructured features imposed on the microstructured layer. The thermal transfer element is configured and arranged for the transfer of at least a portion of the microstructured layer to a receptor while substantially preserving the microstructured features of that portion.

Abstract translation: 可以使用热转印元件形成具有限定微结构特征的表面的部件的制品。 合适的热转印元件的一个实例包括具有限定微结构化层上的微结构特征的表面的微结构化层。 热传递元件被配置和布置成用于将微结构化层的至少一部分转移到受体，同时基本上保留该部分的微结构化特征。