公开(公告)号：US20060094239A1

公开(公告)日：2006-05-04

申请号：US10980561

申请日：2004-11-03

申请人： Stefan Wurm

发明人： Stefan Wurm

IPC分类号： H01L21/44

CPC分类号： H01L21/76864 ,  H01L21/28562 ,  H01L21/3165 ,  H01L21/318 ,  H01L21/7685 ,  H01L21/76858

摘要： Methods of forming dense seed layers and structures thereof. Seed layers comprising a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal layer, resulting in a well defined interface region between the metal layer and a subsequently formed material layer. A seed layer comprising a monolayer of atoms is formed over the metal layer, the temperature of the workpiece is lowered, and a physisorbed layer is formed over the seed layer, the physisorbed layer comprising a weakly bound layer of first molecules. A portion of the first molecules in the physisorbed layer are dissociated by irradiating the physisorbed layer with energy, the dissociated atoms of the first molecules being proximate the seed layer. The workpiece is then heated, causing integration of the dissociated atoms of the first molecules of the physisorbed layer into the seed layer and removing the physisorbed layer.

摘要翻译： 形成致密种子层的方法及其结构。 可以在金属层上制造包含密度为约0.5或更大的单分子层的种子层，从而在金属层和随后形成的材料层之间形成良好限定的界面区域。 在金属层上形成包含单层原子的籽晶层，降低了工件的温度，并在晶种层上形成了物理吸附层，该物理吸附层包含第一分子的弱结合层。 通过用能量照射物理吸附层来解离物理吸附层中的第一分子的一部分，第一分子的解离的原子靠近种子层。 然后加热工件，导致物理层的第一分子的解离的原子与种子层的整合并去除物理吸附层。

公开(公告)号：US20060040483A1

公开(公告)日：2006-02-23

申请号：US10920990

申请日：2004-08-18

申请人： Hiroaki Niimi ,  Luigi Colombo ,  Koji Shimomura ,  Takuya Sugawara ,  Tatsuo Matsudo

发明人： Hiroaki Niimi ,  Luigi Colombo ,  Koji Shimomura ,  Takuya Sugawara ,  Tatsuo Matsudo

IPC分类号： H01L21/3205

CPC分类号： H01L21/022 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3115 ,  H01L21/3144 ,  H01L21/3165 ,  H01L29/513 ,  H01L29/517

摘要： A method and system for modifying a gate dielectric stack by exposure to a plasma. The method includes providing the gate dielectric stack having a high-k layer formed on a substrate, generating a plasma from a process gas containing an inert gas and one of an oxygen-containing gas or a nitrogen-containing gas, where the process gas pressure is selected to control the amount of neutral radicals relative to the amount of ionic radicals in the plasma, and modifying the gate dielectric stack by exposing the stack to the plasma.

摘要翻译： 一种用于通过暴露于等离子体来修改栅极电介质叠层的方法和系统。 该方法包括提供具有形成在衬底上的高k层的栅极电介质堆叠，从含有惰性气体和含氧气体或含氮气体中的一种的工艺气体产生等离子体，其中工艺气体压力 被选择为相对于等离子体中的离子基团的量来控制中性自由基的量，以及通过将该叠层暴露于等离子体来修改栅极电介质堆叠。

公开(公告)号：US20050161434A1

公开(公告)日：2005-07-28

申请号：US10509370

申请日：2003-03-31

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： F02D41/02 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/318 ,  H01L29/78 ,  C23F1/00

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US20050124150A1

公开(公告)日：2005-06-09

申请号：US11003926

申请日：2004-12-03

申请人： Jae-Suk Lee

发明人： Jae-Suk Lee

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/8242 ,  H01L21/302

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/3165 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device fabrication method, which includes forming an inter metal dielectric on a semiconductor substrate having wirings and planarizing the inter metal dielectric through a chemical mechanical polishing, wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.

摘要翻译： 本发明涉及一种半导体器件制造方法，其包括在具有布线的半导体衬底上形成金属间电介质，并通过化学机械抛光使金属间电介质平坦化，其中通过进行至少一个周期形成金属间电介质 沉积多晶硅，等离子体处理多晶硅，并氧化多晶硅。

公开(公告)号：US06815341B2

公开(公告)日：2004-11-09

申请号：US10695804

申请日：2003-10-30

申请人： Hiroshi Yuasa

发明人： Hiroshi Yuasa

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/3165 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

摘要翻译： 绝缘膜由半导体衬底上的含碳二氧化硅膜形成。 在绝缘膜中形成有互连槽。 在互连槽的底面和侧面上形成密度高到足以允许几乎没有氧通过的二氧化硅层。 并且在互连槽内部的二氧化硅层上形成金属互连。

公开(公告)号：US06759263B2

公开(公告)日：2004-07-06

申请号：US10231620

申请日：2002-08-29

申请人： Chentsau Ying ,  Xiaoyi Chen ,  Padmapani C. Nallan ,  Ajay Kumar

发明人： Chentsau Ying ,  Xiaoyi Chen ,  Padmapani C. Nallan ,  Ajay Kumar

IPC分类号： H01L2100

CPC分类号： H01L21/02244 ,  B82Y25/00 ,  B82Y40/00 ,  C23F4/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L21/02071 ,  H01L21/02252 ,  H01L21/31116 ,  H01L21/3165 ,  H01L21/32136 ,  H01L21/32139 ,  H01L43/12 ,  Y10S438/911

摘要： A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such the protected and unprotected regions are defined. The unprotected regions are oxidized to form isolated magnetic regions.

公开(公告)号：US20040110340A1

公开(公告)日：2004-06-10

申请号：US10603895

申请日：2003-06-25

发明人： Gyu Hyun Kim ,  Hyo Geun Yoon ,  Geun Min Choi`

IPC分类号： H01L021/8242 ,  H01L021/302 ,  H01L021/461

CPC分类号： H01L27/10894 ,  H01L21/31133 ,  H01L21/3165 ,  H01L27/10814

摘要： A method for manufacturing a semiconductor device wherein a cylindrical capacitor is formed by selectively etching an oxide film in a cell area for preventing bridging between cells during a wet etching process of the oxide film in the cell area is described herein. A step difference between the interlayer insulating film formed in the cell area and the interlayer insulating film formed in the peripheral circuit area is minimized by covering the peripheral circuit area by the photoresist film and selectively etching the oxide film in the cell area to form a cylindrical capacitor, thereby simplifying the manufacturing process. In addition, bridging between the cells is prevented by performing a simple wet etching process using a single wet station, without performing a separate dry etching process for removing the oxide film and the photoresist film pattern, thereby improving the yield of the device.

摘要翻译： 这里描述了一种用于制造半导体器件的方法，其中通过在电池区域中的氧化膜的湿蚀刻工艺中选择性地蚀刻在电池区中用于防止电池之间的桥接的氧化膜形成圆柱形电容器。 通过用光致抗蚀剂膜覆盖外围电路区域并选择性地蚀刻电池区域中的氧化膜，使形成在电池区域中的层间绝缘膜与形成在外围电路区域中的层间绝缘膜之间的阶梯差被最小化，以形成圆柱形 电容器，从而简化制造过程。 此外，通过使用单个湿站进行简单的湿式蚀刻处理来防止电池之间的桥接，而不进行用于去除氧化膜和光致抗蚀剂膜图案的单独的干蚀刻工艺，从而提高器件的产量。

公开(公告)号：US20020136831A1

公开(公告)日：2002-09-26

申请号：US10140678

申请日：2002-05-07

发明人： Christian M. Gronet ,  Peter A. Knoot ,  Gary E. Miner ,  Guangcai Xing ,  David R. Lopes ,  Satheesh Kuppurao

IPC分类号： C23C016/00 ,  B05D003/02

CPC分类号： C01B13/322 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3165 ,  H01L21/31662

摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

摘要翻译： 在基板上形成氧化物的方法。 根据本发明的方法，将基板放置在室中。 然后将含氧气体和含氢气体进料到室中。 然后使含氧气体和含氢气体彼此反应以在室中形成水蒸气。 然后水蒸汽氧化底物。

公开(公告)号：US06379870B1

公开(公告)日：2002-04-30

申请号：US09614633

申请日：2000-07-12

申请人： Jude A. Dunne

发明人： Jude A. Dunne

IPC分类号： G03F700

CPC分类号： H01L22/24 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3165 ,  H01L21/76802 ,  H01L21/76814

摘要： The invention provides a process for monitoring the quality of via or trench formation in the production of a semiconductor device. More particularly, the invention pertains to a process for detecting side wall oxidation of low dielectric constant materials during the formation of vias or trenches in dielectrics. At least one via and/or trench is cleaved and contacted with a solvent to remove partially oxidized portions of dielectrics on the side walls, enabling defects to be visually inspected.

摘要翻译： 本发明提供了一种在半导体器件的生产中监测通孔或沟槽形成的质量的方法。 更具体地说，本发明涉及在形成电介质中的通孔或沟槽期间检测低介电常数材料的侧壁氧化的方法。 至少一个通孔和/或沟槽被切割并与溶剂接触以除去侧壁上的电介质的部分氧化部分，从而可以目视检查缺陷。

公开(公告)号：US3372067A

公开(公告)日：1968-03-05

申请号：US34726064

申请日：1964-02-25

申请人： TELEFUNKEN PATENT

发明人： HORST SCHAFER

IPC分类号： C23C26/00 ,  H01L21/00 ,  H01L21/033 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/31683 ,  C23C26/00 ,  H01L21/00 ,  H01L21/033 ,  H01L21/314 ,  H01L21/3165 ,  Y10S148/043 ,  Y10S148/049 ,  Y10S148/059 ,  Y10S148/072 ,  Y10S148/106 ,  Y10S148/117 ,  Y10S438/923 ,  Y10S438/945