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    DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO)
    63.
    发明申请
    DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO) 审中-公开
    减少非极性和半极性III-氮素与侧壁外延生长（SLEO）的缺陷

    公开(公告)号：US20120098102A1

    公开(公告)日：2012-04-26

    申请号：US13093452

    申请日：2011-04-25

    Applicant: Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars

    Inventor： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars

    IPC: H01L29/20 ,  C30B23/06 ,  C30B25/02

    CPC classification number: H01L21/02609 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

    Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

    Abstract translation: 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。

    Multi element, multi color solid state LED/laser
    67.
    发明授权
    Multi element, multi color solid state LED/laser 有权
    多元素，多色固态LED /激光

    公开(公告)号：US08035117B2

    公开(公告)日：2011-10-11

    申请号：US11484233

    申请日：2006-07-10

    Applicant: Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    Inventor： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    IPC: H01L33/00

    CPC classification number: H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

    Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.

    Abstract translation: 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色，蓝色和紫外光的有源层，使得LED发射绿色，蓝色，红色和紫外光，结合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个有源层发射紫外光的固态激光器，其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。

    TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO NONPOLAR AND SEMIPOLAR P-TYPE (Al,Ga,In)N
    69.
    发明申请
    TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO NONPOLAR AND SEMIPOLAR P-TYPE (Al,Ga,In)N 审中-公开
    用于实现非绝缘和双极P型（Al，Ga，In）N的低电阻接触的技术

    公开(公告)号：US20110169138A1

    公开(公告)日：2011-07-14

    申请号：US12909702

    申请日：2010-10-21

    Applicant: You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    Inventor： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC: H01L29/20 ,  H01L21/20 ,  H01L21/28

    CPC classification number: H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/40 ,  H01L2933/0016

    Abstract: A method of fabricating a p-type contact on a nonpolar or semipolar (Al,Ga,In)N device, includes the steps of growing a p-type layer on an (Al,Ga,In)N device, wherein the (Al,Ga,In)N device is a nonpolar or semipolar (Al,Ga,In)N device, and the p-type layer is a nonpolar or semipolar (Al,Ga,In)N layer; and cooling the p-type layer down, in the presence of Bis(Cyclopentadienyl)Magnesium (Cp2Mg), to form a magnesium-nitride (MgxNy) layer on the p-type layer. A metal deposition is performed to fabricate a p-type contact on the p-type layer of the (Al,Ga,In)N device, after the cooling step, wherein the p-type contact has a contact resistivity lower than a p-type contact of a polar (Al,Ga,In)N device with substantially similar composition. A hydrogen chloride (HCl) pre-treatment of the p-type layer may be performed, after the cooling step and before the metal deposition step.

    Abstract translation: 在非极性或半极性（Al，Ga，In）N器件上制造p型接触的方法包括在（Al，Ga，In）N器件上生长p型层的步骤，其中（Al ，Ga，In）N器件是非极性或半极性（Al，Ga，In）N器件，p型层是非极性或半极性（Al，Ga，In）N层; 并在双（环戊二烯基）镁（Cp2Mg）的存在下，向下冷却p型层，以在p型层上形成氮化镁（Mg x N y）层。 在冷却步骤之后，进行金属沉积以在（Al，Ga，In）N器件的p型层上制造p型接触，其中p型接触的接触电阻低于p- 极性（Al，Ga，In）N器件的类型接触具有基本相似的组成。 可以在冷却步骤之后和金属沉积步骤之前进行p型层的氯化氢（HCl）预处理。

    High light extraction efficiency light emitting diode (LED) with emitters within structured materials
    70.
    发明授权
    High light extraction efficiency light emitting diode (LED) with emitters within structured materials 失效
    高光提取效率发光二极管（LED）与结构材料中的发射体

    公开(公告)号：US07977694B2

    公开(公告)日：2011-07-12

    申请号：US11940866

    申请日：2007-11-15

    Applicant: Aurelien J. F. David ,  Claude C. A. Weisbuch ,  Steven P. DenBaars ,  Stacia Keller

    Inventor： Aurelien J. F. David ,  Claude C. A. Weisbuch ,  Steven P. DenBaars ,  Stacia Keller

    IPC: H01L27/15 ,  H01L29/26

    CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0083

    Abstract: Light Emitting Diodes (LEDs) where the emission region, usually a (Al,In,Ga)N layer, is structured for efficient light extraction, are disclosed. The structuring is designed for light extraction from thin films, such as a photonic crystal acting as a diffraction grating. In addition, the structuring controls the in-plane emission and allows new modes into which light will be emitted. Various electrode designs are proposed, including ZnO structures which are known to lead to both excellent electrical properties, such as good carrier injection, and high transparency. Alternatively, the (Al,In,Ga)N layer can be replaced by structures with other materials compositions, in order to achieve efficient light extraction.

    Abstract translation: 公开了发射区域（LED），其中发射区域（通常为（Al，In，Ga）N层）被构造用于有效的光提取。 该结构设计用于从诸如作为衍射光栅的光子晶体的薄膜的光提取。 此外，结构化控制面内发射，并允许发射光的新模式。 提出了各种电极设计，包括已知导致优异电性能的ZnO结构，例如良好的载流子注入和高透明度。 或者，（Al，In，Ga）N层可以被具有其他材料组成的结构代替，以便实现有效的光提取。

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