公开(公告)号：US08541788B2

公开(公告)日：2013-09-24

申请号：US12581759

申请日：2009-10-19

申请人： Steven P. Denbaars ,  Shuji Nakamura ,  Max Batres

发明人： Steven P. Denbaars ,  Shuji Nakamura ,  Max Batres

IPC分类号： H01L27/15

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

摘要： A light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a reflective layer adjacent the light emitting region of the diode. This light emitting diode includes a confinement structure. The confinement structure may be an opening in the reflective layer generally beneath the top ohmic contact that defines a non-contact area between the reflective layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. The LED may include roughened emitting surfaces to further enhance light extraction.

摘要翻译： 具有在二极管的顶表面的部分上的欧姆接触的垂直取向的发光二极管和与二极管的发光区相邻的反射层。 该发光二极管包括限制结构。 约束结构可以是反射层中通常在顶部欧姆接触下方的开口，其限定反射层和二极管的发光区域之间的非接触区域，以促进除非接触之外的电流流动 面积又减少欧姆接触下方的发光复合数，并增加不在所述欧姆接触下方的区域中的发光复合数。 LED可以包括粗糙化的发射表面以进一步增强光提取。

公开(公告)号：US20130215921A1

公开(公告)日：2013-08-22

申请号：US13593340

申请日：2012-08-23

申请人： Daniel A. Cohen ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel A. Cohen ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S5/30 ,  H01L33/32

CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01L21/02631 ,  H01L33/32 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

摘要翻译： 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

公开(公告)号：US08450192B2

公开(公告)日：2013-05-28

申请号：US12207407

申请日：2008-09-09

申请人： Benjamin A. Haskell ,  Paul T. Fini ,  Shigemasa Matsuda ,  Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Benjamin A. Haskell ,  Paul T. Fini ,  Shigemasa Matsuda ,  Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L29/20 ,  H01L21/203

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262

摘要： Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

摘要翻译： 描述了平面，非极性，III族氮化物膜的生长方法。 所得到的膜适合于通过各种生长技术的后续装置再生长。

公开(公告)号：US08402212B2

公开(公告)日：2013-03-19

申请号：US12105093

申请日：2008-04-17

申请人： Shuji Nakamura ,  Makio Mizuno ,  Katsuya Tanaka

发明人： Shuji Nakamura ,  Makio Mizuno ,  Katsuya Tanaka

IPC分类号： G06F13/00

CPC分类号： G06F3/0635 ,  G06F3/0617 ,  G06F3/067 ,  G06F3/0689 ,  G06F11/201 ,  G06F11/2056 ,  G06F11/2092

摘要： High availability is provided in a storage system that offers expandability more inexpensively. Provided is a storage system including multiple expanders to be connected to multiple storage mediums, multiple cascades connected respectively to a prescribed number of expanders among the multiple expanders, and multiple control units for respectively controlling the multiple cascades. One end of the multiple cascades is connected with an inter-cascade link, and the inter-cascade link has a logically connected state and a logically disconnected state.

摘要翻译： 在可更便宜地提供可扩展性的存储系统中提供高可用性。 提供了一种存储系统，包括要连接到多个存储介质的多个扩展器，分别连接到多个扩展器中的规定数量的扩展器的多个级联，以及用于分别控制多个级联的多个控制单元。 多个级联的一端与级联链路相连，级联链路具有逻辑连接状态和逻辑断开状态。

公开(公告)号：US08368523B2

公开(公告)日：2013-02-05

申请号：US12218072

申请日：2008-07-10

申请人： Hisashi Takahashi ,  Shuji Nakamura

发明人： Hisashi Takahashi ,  Shuji Nakamura

IPC分类号： B60Q1/00

CPC分类号： B60R19/483 ,  B60R21/0136

摘要： A collision detection sensor includes an absorber, a chamber member, a pressure sensor, and a collision detection circuit. The absorber is deformed with a collision to absorb collision impact force. The absorber is located in a vehicle bumper and located in front of a bumper reinforcement in a vehicle front-rear direction. The chamber member defines a chamber room therein. The chamber member is located in the bumper and located in front of the bumper reinforcement in the vehicle front-rear direction. The pressure sensor detects pressure in the chamber room. The collision detection circuit detects the collision based on the detected pressure. A front end of the absorber is located further away from the bumper reinforcement than a front end of the chamber member in the vehicle front-rear direction.

公开(公告)号：US20130022528A1

公开(公告)日：2013-01-24

申请号：US13592750

申请日：2012-08-23

申请人： Tadao Hashimoto ,  Shuji Nakamura

发明人： Tadao Hashimoto ,  Shuji Nakamura

IPC分类号： C30B7/10 ,  C01B21/06

CPC分类号： C30B29/406 ,  C30B7/10

摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

摘要翻译： 具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积， 平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。 通过使用具有上部区域和下部区域的高压容器，通过与常规使用的温度和温度差更高的氨热法生长GaN本体晶体。 下部区域的温度为550℃以上，上部区域的温度为500℃以上，下部和上部区域之间的温度差保持在30℃以上。 使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。

公开(公告)号：US08357925B2

公开(公告)日：2013-01-22

申请号：US13300977

申请日：2011-11-21

申请人： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/34333

摘要： A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

摘要翻译： 制造了发射波长（λpeak）范围从280nm到360nm的大功率和高效率发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

公开(公告)号：US20120313077A1

公开(公告)日：2012-12-13

申请号：US13493483

申请日：2012-06-11

申请人： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  Chih-Chien Pan ,  Yuji Zhao ,  Shinichi Tanaka

发明人： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  Chih-Chien Pan ,  Yuji Zhao ,  Shinichi Tanaka

IPC分类号： H01L33/04 ,  H01L33/32

CPC分类号： H01L33/0062 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/16

摘要： High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).

摘要翻译： 高发射功率和低效率下垂半极蓝光发光二极管（LED）。

公开(公告)号：US20120301634A1

公开(公告)日：2012-11-29

申请号：US13575434

申请日：2011-01-25

申请人： Shuji Nakamura ,  Yoshikazu Yukami ,  Kanae Nishimura

发明人： Shuji Nakamura ,  Yoshikazu Yukami ,  Kanae Nishimura

IPC分类号： B32B9/04 ,  B05D5/00 ,  B32B15/09 ,  B05D1/36 ,  B32B15/08 ,  B32B15/095

CPC分类号： C23C16/30 ,  C08J7/045 ,  C08J2367/02 ,  C08J2369/00 ,  C08J2433/04 ,  C23C14/024 ,  C23C14/06 ,  C23C16/0272 ,  Y10T428/10 ,  Y10T428/265 ,  Y10T428/31507 ,  Y10T428/31598 ,  Y10T428/31663

摘要： A gas barrier film having excellent gas barrier properties (e.g., barrier properties against water vapor), a production process of the film, and a device provided with the film are provided.A gas barrier film 10 having high gas barrier properties (e.g., barrier properties against water vapor) is obtainable by forming an anchor layer 12 on at least one side of a base film 11 and forming a barrier layer 13 on the anchor layer, wherein the anchor layer is formed from a cured product of a polymerizable composition containing at least a silicone (meth)acrylate monomer and/or prepolymer, and the barrier layer contains a metal or a metal compound.

摘要翻译： 提供了具有优异的阻气性（例如防水蒸气的阻隔性），膜的制造工艺和设置有膜的装置的阻气膜。 具有高阻气性（例如，抗水蒸汽的阻隔性）的阻气膜10可以通过在基膜11的至少一侧上形成锚固层12并在锚定层上形成阻挡层13来获得，其中 锚固层由至少含有硅氧烷（甲基）丙烯酸酯单体和/或预聚物的可聚合组合物的固化产物形成，阻挡层含有金属或金属化合物。

公开(公告)号：US20120256158A1

公开(公告)日：2012-10-11

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/04

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。