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    Collision detection sensor for vehicle
    1.
    发明授权
    Collision detection sensor for vehicle 有权

    公开(公告)号：US08368523B2

    公开(公告)日：2013-02-05

    申请号：US12218072

    申请日：2008-07-10

    申请人： Hisashi Takahashi ,  Shuji Nakamura

    发明人： Hisashi Takahashi ,  Shuji Nakamura

    IPC分类号： B60Q1/00

    CPC分类号： B60R19/483 ,  B60R21/0136

    摘要： A collision detection sensor includes an absorber, a chamber member, a pressure sensor, and a collision detection circuit. The absorber is deformed with a collision to absorb collision impact force. The absorber is located in a vehicle bumper and located in front of a bumper reinforcement in a vehicle front-rear direction. The chamber member defines a chamber room therein. The chamber member is located in the bumper and located in front of the bumper reinforcement in the vehicle front-rear direction. The pressure sensor detects pressure in the chamber room. The collision detection circuit detects the collision based on the detected pressure. A front end of the absorber is located further away from the bumper reinforcement than a front end of the chamber member in the vehicle front-rear direction.

    Collision detection sensor for vehicle
    2.
    发明申请
    Collision detection sensor for vehicle 有权
    车辆碰撞检测传感器

    公开(公告)号：US20090015392A1

    公开(公告)日：2009-01-15

    申请号：US12218072

    申请日：2008-07-10

    申请人： Hisashi Takahashi ,  Shuji Nakamura

    发明人： Hisashi Takahashi ,  Shuji Nakamura

    IPC分类号： B60Q1/00 ,  G08G1/16

    CPC分类号： B60R19/483 ,  B60R21/0136

    摘要： A collision detection sensor includes an absorber, a chamber member, a pressure sensor, and a collision detection circuit. The absorber is deformed with a collision to absorb collision impact force. The absorber is located in a vehicle bumper and located in front of a bumper reinforcement in a vehicle front-rear direction. The chamber member defines a chamber room therein. The chamber member is located in the bumper and located in front of the bumper reinforcement in the vehicle front-rear direction. The pressure sensor detects pressure in the chamber room. The collision detection circuit detects the collision based on the detected pressure. A front end of the absorber is located further away from the bumper reinforcement than a front end of the chamber member in the vehicle front-rear direction.

    摘要翻译： 碰撞检测传感器包括吸收器，室构件，压力传感器和碰撞检测电路。 吸收体随碰撞而变形以吸收碰撞冲击力。 吸收器位于车辆保险杠中，位于车辆前后方向上的保险杠加强件的前方。 室构件在其中限定室室。 舱室构件位于保险杠中，位于保险杠加强件前部的车辆前后方向上。 压力传感器检测腔室中的压力。 碰撞检测电路基于检测到的压力来检测碰撞。 吸收器的前端比车辆前后方向上的室构件的前端远离保险杠加强件定位。

    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
    8.
    发明授权
    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
    通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加

    公开(公告)号：US08772758B2

    公开(公告)日：2014-07-08

    申请号：US13470598

    申请日：2012-05-14

    申请人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/06

    CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513

    摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

    摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。