公开(公告)号：US07956380B2

公开(公告)日：2011-06-07

申请号：US11331290

申请日：2006-01-12

申请人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

发明人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/40

摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

摘要翻译： 提供了一种半导体发光器件。 在包括Ag电极的InGaN系半导体发光元件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2）的位错半导体层 ），从而可以避免沿着该位错产生的Ag迁移引起的短路。 因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。

公开(公告)号：US07727331B2

公开(公告)日：2010-06-01

申请号：US11699999

申请日：2007-01-31

申请人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B25/02

CPC分类号： H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 在从下方延伸的每个穿透位错D1的端部中，晶体层（13）具有空间（13a），（13b）。 穿透位错D1通过空间（13a），（13b）与上层分开，使得每个穿透位错D1被阻止传播到上层。 当由汉堡矢量表示的穿透位错D1的位移被保留以产生另一个位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变成结晶。

公开(公告)号：US07700959B2

公开(公告)日：2010-04-20

申请号：US11568427

申请日：2005-03-31

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L29/15 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296 ,  H01L29/201 ,  H01L29/205 ,  H01L29/227

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： A semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer is provided. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

摘要翻译： 提供一种半导体发光器件，其能够通过使用形成在电极侧的高反射金属层，并能够防止原子从高反射率金属层迁移而获得高的光反射率。 相反导电类型的半导体层形成在有源层的相对侧上，欧姆接触层是用于减小接触电阻的薄膜，透明导电层和用于反射的高反射金属层 在有源层中产生的光依次层叠在一个半导体层上。 由于透明导电层也用作阻挡层并且透射光，因此可以通过高反射率金属层的反射获得高的光取出效率。

公开(公告)号：US07501663B2

公开(公告)日：2009-03-10

申请号：US11558176

申请日：2006-11-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件包括：具有沿衬底表面取向的衬底表面的衬底; 在基板上形成包括第一生长层导电型的第一生长层; 形成在第一生长层上的掩模层; 通过通过掩模层中的开口的选择性生长形成并包括沿着晶体表面取向的晶体表面形成的第二生长层导电类型的第二生长层; 包括沿着所述晶体表面的至少一部分形成的第一包层导电类型的第一包层; 活性层 以及包括第二包覆层导电型的第二包覆层。 第一包覆层，有源层和第二覆层中的至少一个覆盖围绕开口的掩模层。

公开(公告)号：US20080121904A1

公开(公告)日：2008-05-29

申请号：US11568427

申请日：2005-03-31

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L21/329 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： There is obtained a semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

摘要翻译： 通过使用在一侧形成的电极侧形成的能够防止原子从高反射率金属层迁移的高反射金属层，能够得到高反射率的半导体发光元件 。 相反导电类型的半导体层形成在有源层的相对侧上，欧姆接触层是用于减小接触电阻的薄膜，透明导电层和用于反射的高反射金属层 在有源层中产生的光依次层叠在一个半导体层上。 由于透明导电层也用作阻挡层并且透射光，因此可以通过高反射率金属层的反射获得高的光取出效率。

公开(公告)号：US20070284564A1

公开(公告)日：2007-12-13

申请号：US11718862

申请日：2006-09-08

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L29/06 ,  G02F1/13357

CPC分类号： H01L33/32 ,  B82Y20/00 ,  G02F1/133603 ,  G02F1/133621 ,  H01L33/06 ,  H01L33/20 ,  H01L2224/0603 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/181 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H04N9/315 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well structure including well layers and barrier layers for separating between the well layers, and (C) a second GaN-based compound semiconductor layer 17 having p-type conductivity. The well layers are disposed in the active layer 15 so as to satisfy the relation d1

摘要翻译： GaN基半导体发光器件包括（A）具有n型导电性的第一GaN基化合物半导体层13，（B）具有多量子阱结构的有源层15，其包括阱层和用于分离的势垒层 （C）具有p型导电性的第二GaN基化合物半导体层17。 阱层设置在有源层15中以满足关系d 1 其中d 1是阱层密度 在有源层中的第一GaN基化合物半导体层侧，第二GaN基化合物半导体层侧的阱层密度为d 2。

公开(公告)号：US20070190677A1

公开(公告)日：2007-08-16

申请号：US11691292

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20070147453A1

公开(公告)日：2007-06-28

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US07227189B2

公开(公告)日：2007-06-05

申请号：US10868313

申请日：2004-06-15

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/32

摘要： Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.

摘要翻译： 提供氮化物半导体器件及其制造方法。 本发明包括在选择性和受控的晶体生长条件下在氮化物半导体的基体上形成氮化物半导体层。 例如，晶体生长速度，晶体生长源材料的供给和/或晶体生长面积可以随时间变化，从而导致具有增强性能的氮化物半导体器件。

公开(公告)号：US07205168B2

公开(公告)日：2007-04-17

申请号：US10494972

申请日：2003-09-08

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。