公开(公告)号：US06586318B1

公开(公告)日：2003-07-01

申请号：US09473576

申请日：1999-12-28

申请人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

发明人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L21/2254 ,  H01L29/78669

摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

摘要翻译： 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中，使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

公开(公告)号：US6107641A

公开(公告)日：2000-08-22

申请号：US927023

申请日：1997-09-10

申请人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce ,  Christopher L. Chua ,  Michael G. Hack

发明人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce ,  Christopher L. Chua ,  Michael G. Hack

IPC分类号： H01L21/223 ,  H01L21/225 ,  H01L21/266 ,  H01L21/336 ,  H01L27/144 ,  H01L27/146 ,  H01L29/786 ,  H01L31/0216 ,  H01L29/76

CPC分类号： H01L29/78696 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/266 ,  H01L27/1443 ,  H01L27/14603 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78669 ,  H01L31/02162 ,  H01L31/02165 ,  Y10S438/94

摘要： An improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser doping technique is applied to fabricate such transistors. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.

摘要翻译： 提供了不具有源极/栅极或漏极/栅极重叠的改进的薄膜晶体管结构。 应用激光掺杂技术来制造这种晶体管。 消除源极/栅极和漏极/栅极重叠显着降低或消除了源极和栅极之间的寄生电容和馈通电压。 可以获得具有高场效应迁移率的短沟道a-Si：H薄膜晶体管。 提供了改进的像素性能和像素到像素的均匀性。

公开(公告)号：US6031248A

公开(公告)日：2000-02-29

申请号：US67657

申请日：1998-04-28

申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

IPC分类号： H01L27/146 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/46

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.

摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。

公开(公告)号：US5893948A

公开(公告)日：1999-04-13

申请号：US630955

申请日：1996-04-05

申请人： Norbert H. Nickel ,  Gregory B. Anderson ,  Steven E. Ready ,  James B. Boyce ,  Ping Mei

发明人： Norbert H. Nickel ,  Gregory B. Anderson ,  Steven E. Ready ,  James B. Boyce ,  Ping Mei

IPC分类号： H01L31/04 ,  C30B13/00 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B13/06

CPC分类号： C30B29/06 ,  C30B13/00 ,  Y10S117/902

摘要： The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.

摘要翻译： 本发明提供了一种在衬底上形成多个单晶硅晶体的方法。 该方法在衬底上形成多个成核位点。 在覆盖多个硅成核位​​置的衬底上形成非晶硅层。 通过使用激光束熔化非晶硅层，然后结晶以形成多个单晶硅晶体。 多个单晶硅晶体中的每一个对应于多个成核位点中的一个。

公开(公告)号：US07710371B2

公开(公告)日：2010-05-04

申请号：US11014490

申请日：2004-12-16

申请人： Ping Mei ,  Jurgen Daniel ,  James B. Boyce ,  Kathleen Dore Boyce, legal representative ,  Jackson Ho ,  Rachel Lau ,  Yu Wang

发明人： Ping Mei ,  Jurgen Daniel ,  James B. Boyce ,  Jackson Ho ,  Rachel Lau ,  Yu Wang

IPC分类号： G09G3/34 ,  C25B9/00 ,  F04B17/00 ,  B41J2/14 ,  G02F1/153 ,  H04R19/00

CPC分类号： C25D5/02 ,  C23C18/28 ,  C25D5/56 ,  H04R19/04

摘要： Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume. Arrays of such cells can be implemented for various applications, such as optical modulators, displays, printheads, and microphones.

摘要翻译： 细胞可以包括在诸如聚合物层的柔性结构和支撑表面之间限定的可变体积，其中柔性结构和支撑表面附接在围绕其未连接的第二区域的第一区域中。 各种粘合结构可以附接柔性结构和支撑表面。 当未拉伸时，柔性结构可以位于支撑表面上的平坦位置。 响应于远离支撑表面的拉伸力，柔性结构可以移出平坦位置，从而提供可变的体积。 诸如柔性结构的电极，在支撑表面上以及柔性结构上的电极可以具有彼此耦合并且具有可变体积的电荷水平。 支撑结构可以包括具有提供电极和外部电路之间的信号路径的信号电路的器件层。 一个或多个管道可以提供与每个电池的可变体积的流体连通。 可以对诸如光学调制器，显示器，打印头和麦克风的各种应用来实现这种单元的阵列。

公开(公告)号：US07585424B2

公开(公告)日：2009-09-08

申请号：US11037886

申请日：2005-01-18

申请人： Ping Mei

发明人： Ping Mei

IPC分类号： H01L21/027

CPC分类号： H01L51/0017 ,  C23F4/00 ,  Y10S438/924 ,  Y10S438/945

摘要： This invention provides a pattern reversal process for self aligned imprint lithography (SAIL). The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at least one covered area of the layer of material. The exposed areas are treated to toughen the material and reverse the pattern. Subsequent etching removes the un-toughened material. A thin-film transistor device provided by the pattern reversal process is also provided.

摘要翻译： 本发明提供了一种用于自对准压印光刻（SAIL）的图案反转方法。 该方法包括提供衬底并在衬底上沉积至少一层材料。 然后在材料层上建立图案，该图案提供材料层的至少一个暴露区域和至少一个覆盖区域。 处理暴露的区域以增强材料并反转图案。 随后的蚀刻去除未增韧的材料。 还提供了通过图案反转处理提供的薄膜晶体管器件。

公开(公告)号：US07521313B2

公开(公告)日：2009-04-21

申请号：US11037887

申请日：2005-01-18

申请人： Ping Mei

发明人： Ping Mei

IPC分类号： H01L21/8238

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603 ,  H01L29/7869

摘要： This invention provides a method of fabricating an active matrix of thin film devices through a pattern reversal self aligned imprint lithography (SAIL) process. The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at least one covered area of the layer of material. The exposed areas are treated to provide etch resistance to the material and reverse the pattern. Subsequent etching removes the etch susceptible material, the etch resistant material remaining. A thin-film stack is then deposited upon the remaining etch resistant material. These deposited thin-films are then processed in accordance with the desired characteristics of the thin film devices.

摘要翻译： 本发明提供一种通过图案反转自对准压印光刻（SAIL）工艺制造薄膜器件的有源矩阵的方法。 该方法包括提供衬底并在衬底上沉积至少一层材料。 然后在材料层上建立图案，该图案提供材料层的至少一个暴露区域和至少一个覆盖区域。 处理暴露的区域以对材料提供耐蚀刻性并逆转图案。 随后的蚀刻去除蚀刻敏感材料，留下耐蚀刻材料。 然后将薄膜堆叠沉积在剩余的耐蚀刻材料上。 然后根据薄膜器件的期望特性对这些沉积的薄膜进行处理。

公开(公告)号：US20070040491A1

公开(公告)日：2007-02-22

申请号：US11589580

申请日：2006-10-30

申请人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01J1/62

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869

摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

摘要翻译： 本文公开了薄膜器件及其形成方法。 一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条 跳闸。 第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。 在第一和第二至少半导电条之间形成纳米间隙。

公开(公告)号：US07071548B2

公开(公告)日：2006-07-04

申请号：US10696825

申请日：2003-10-30

申请人： Albert Hua Jeans ,  Ping Mei

发明人： Albert Hua Jeans ,  Ping Mei

IPC分类号： H01L23/12 ,  H01L21/20 ,  C04B37/00

CPC分类号： H01L21/02282 ,  C09D175/04 ,  H01L21/312

摘要： An article comprises a semiconductor substrate and a coating mixture on the semiconductor substrate. The coating mixture Is comprised of adhesion promoter and photopolymer. The adhesion promoter contains α-amino propyltriethoxysilane in organic solution.

摘要翻译： 一种制品包括在半导体衬底上的半导体衬底和涂层混合物。 涂料混合物由粘合促进剂和光聚合物组成。 粘合促进剂在有机溶液中含有α-氨基丙基三乙氧基硅烷。

公开(公告)号：US20050157547A1

公开(公告)日：2005-07-21

申请号：US10985762

申请日：2004-11-09

申请人： Ping Mei ,  James Easton

发明人： Ping Mei ,  James Easton

IPC分类号： G11C16/04 ,  G11C5/06 ,  G11C16/02 ,  G11C17/16 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C16/06

CPC分类号： G11C17/16

摘要： A memory device includes a memory array of thin film transistor (TFT) memory cells. The memory cells include a floating gate separated from a gate electrode portion of a gate line by an insulator. The gate electrode portion includes a diffusive conductor that diffuses through the insulator under the application of a write voltage. The diffusive conductor forms a conductive path through the insulator that couples the gate line to the floating gate, changing the gate capacitance and therefore the state of the memory cell. The states of the memory cells are detectable as the differing current values for the memory cells. The memory cells are three terminal devices, and read currents do not pass through the conductive paths in the memory cells during read operations. This renders the memory cells robust, because read currents will not interfere with the storage mechanism in the memory cells. The memory array can be fabricated using multiple steps using the same mask. The use of a single mask for multiple steps reduces the time and cost involved in fabricating the memory array.

摘要翻译： 存储器件包括薄膜晶体管（TFT）存储单元的存储器阵列。 存储单元包括通过绝缘体与栅极线的栅极部分分离的浮动栅极。 栅电极部分包括在施加写入电压下扩散通过绝缘体的漫射导体。 扩散导体形成通过绝缘体的导电路径，其将栅极线耦合到浮动栅极，改变栅极电容并因此改变存储器单元的状态。 存储器单元的状态可被检测为存储器单元的不同电流值。 存储单元是三个终端设备，并且读取电流在读取操作期间不通过存储器单元中的导电路径。 这使得存储器单元牢固，因为读取电流将不会干扰存储器单元中的存储机制。 可以使用相同的掩模使用多个步骤来制造存储器阵列。 对于多个步骤使用单个掩模减少了制造存储器阵列所涉及的时间和成本。