摘要:
A packaged semiconductor device has, according to one embodiment of the present invention, a semiconductor pellet having an electronic circuit therein and electrode pads formed on a principal surface of the pellet, a plurality of electrical connection bumps provided on the electrode pads, a plurality of heat dissipation bumps provided at the principal surface of the pellet and electrically insulated from the electronic circuit and the electrode pads, electrical connection leads for the electronic circuit, heat dissipators for the electronic circuit and a packaging material for sealing pellet, the electrical connection bumps, the heat dissipation bumps and parts of the electrical connection leads and the heat dissipator. One or more of the heat dissipation bumps are arranged relatively nearer to the electronic circuit than the electrical connection bumps for thermal coupling to the electronic circuit. One or more of the electrical connection leads may be engaged with the electrical connection bumps and the heat dissipation bumps and/or one or more of the dissipators may be engaged with the heat dissipation bumps and the electrical connection bumps, thereby serving to effect electrical connection to and heat dissipation for the electronic circuit.
摘要:
An output power control circuit is provided in a casing of a mobile radio apparatus together with an automatic power control circuit and an RF signal amplifier. The output power control circuit applied level control signals to the automatic power control circuit for maintaining the power level of the output RF signal of the RF amplifier at one of a plurality of output power levels corresponding to the level control signals. The output power control circuit has a receiver, a temperature sensing circuit and a logic circuit. The receiver receives RF signals transmitted by a master station and detects power level setting command signals included in the received RF signal. The temperature sensing circuit detects an internal temperature of the casing and provides a power reduction signal upon detecting that the internal temperature has exceeded a predetermined temperature. The logic circuit receives the power level setting command signal from said receiver, and generates a level control signal for determining an output power level corresponding to the power level setting command signal, and generates a level control signal for determining an output power level which is lower than that specified by the power level setting command signal upon receiving the power reduction signal from the temperature sensing circuit.
摘要:
An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
摘要:
An overcurrent protection apparatus for a DC motor which can be used with a speed control system of a DC motor to prevent an overcurrent condition arising when the DC motor is run with a heavy load or locked by an overload from burning or overheating windings of the motor. The apparatus is constructed using at least one integrated circuit and includes a current mirror circuit for detecting an overcurrent and for cutting off the supply current of the DC motor. A timing circuit prevents overcurrents lasting only a short time from triggering the apparatus to shut down the motor. Once the apparatus is triggered to shut off the motor, the motor will remain off for an indefinite period of time until the apparatus is reset.
摘要:
A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要:
A thermoplastic resin composition excellent in coating property which comprises (A) at least one of polyamide resins and polyacetal resins, (B) at least one of aromatic monovinyl compound/vinyl cyanide copolymers comprising units of aromatic monovinyl compounds and units of vinyl cyanides in a weight ratio of 60:40 to 80:20 and having an intrinsic viscosity of 0.3 to 1.1 and (C) at least one of conjugated diene rubber/vinyl cyanide graft copolymers comprising units of conjugated diene rubbers in an amount of 5 to 45% by weight based on the weight of the graft copolymers in a weight proportion of the components (A), (B) and (C) being 0.1-10: 5-90: 5-94.9.
摘要:
An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of the second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance.
摘要:
A salt represented by formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, L1 represents a C1-C17 divalent saturated hydrocarbon group in which a methylene group may be replaced by an oxygen atom or a carbonyl group, L2 and L3 respectively represent a single bond or a C1-C6 divalent saturated alkyl group in which a methylene group may be replaced by an oxygen atom or a carbonyl group, ring W1 and ring W2 respectively represent a C3-C36 hydrocarbon ring, R1 and R2 respectively represent a hydrogen atom or C1-C6 alkyl group, R3 represents C1-C6 alkyl group, t represents an integer of 0 to 2 and Z+ represents an organic counter ion.