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    Semiconductor device and method of manufacturing the same
    66.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07732262B2

    公开(公告)日：2010-06-08

    申请号：US11477376

    申请日：2006-06-30

    申请人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    发明人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    IPC分类号： H01L21/46

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2221/6835 ,  H01L2221/68368

    摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

    摘要翻译： 为了提供一种制造半导体器件的方法，该半导体器件包括转印步骤，该转印步骤能够在分离包含半导体元件或在其上形成的集成电路的元件形成层的情况下控制衬底和元件形成层的粘附性 衬底并将其粘合到另一衬底上。 在半导体元件或包括形成在基板（第一基板）和基板之上的多个半导体元件的集成电路之间）形成由良好的粘合性材料制成的粘合剂，因此可以防止半导体元件剥离 制造半导体元件的基板，并且通过在形成半导体元件之后去除粘合剂，使得更容易将半导体元件与基板分离。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    67.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20090275196A1

    公开(公告)日：2009-11-05

    申请号：US12480752

    申请日：2009-06-09

    申请人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya Maruyama ,  Yumiko OHNO

    发明人： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya Maruyama ,  Yumiko OHNO

    IPC分类号： H01L21/283

    CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

    摘要： (Object)It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.

    摘要翻译： （对象）本发明的目的是提供一种不会对被剥离层造成损害的剥离方法，并且不仅允许以小的表面积剥离层，而且还可以使用剥离层 大的表面积要完全剥离。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。 （解决方案）当在基板上设置金属层11时，设置与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11 进行氧化并形成金属氧化物层16，通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面，可以进行清晰的分离。