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公开(公告)号：US20080303039A1
公开(公告)日：2008-12-11
申请号：US11760521
申请日：2007-06-08
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/642 , H01L33/647 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.
摘要翻译： 用于半导体器件的安装件包括载体，设置在载体的底表面上的至少两个金属引线和延伸穿过载体厚度的空腔以暴露金属引线的顶表面的一部分。 半导体发光器件位于空腔中，并且与金属引线电连接并物理连接。 载体可以是例如硅，并且引线可以是多层结构，例如连接到厚铜层的薄金层。
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公开(公告)号：US06989555B2
公开(公告)日：2006-01-24
申请号：US10830202
申请日：2004-04-21
IPC分类号： H01L29/24
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
摘要翻译： 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。
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公开(公告)号：US06646292B2
公开(公告)日：2003-11-11
申请号：US09803002
申请日：2001-03-09
IPC分类号： H01L3300
CPC分类号： H01L33/22 , H01L27/156 , H01L33/02 , H01L33/025 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/64 , H01L33/641
摘要： A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient &agr;, at the emission wavelength of the active region, of &agr;>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, &agr;, of the substrate material is &agr;
摘要翻译： 发光器件包括：形成在衬底一侧的半导体结构，所述半导体结构具有多个半导体层和所述层内的有源区; 以及分别与所述结构的不同半导体层接触的第一和第二导电电极; 该衬底包括在有源区的发射波长处具有α> 3cm -1的折射率n> 2.0和光吸收系数α的材料。 在优选实施例中，基底材料的折射率n> 2.3，并且基底材料的光吸收系数α为α<1cm -1。
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64.发明授权公开(公告)号：US06525335B1
公开(公告)日：2003-02-25
申请号：US09707495
申请日：2000-11-06
IPC分类号： H01L2906
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/32
摘要： A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement semiconductor layer to the stack. A light emitting semiconductor device includes a first carrier confinement layer of a first semiconductor having a first conductivity type, an active region, and a wafer bonded interface disposed between the active region and the first carrier confinement layer. The light emitting semiconductor device may further include a second carrier confinement layer of a second semiconductor having a second conductivity type, with the active region disposed between the first carrier confinement layer and the second carrier confinement layer. The wafer bonded confinement layer provides enhanced carrier confinement and device performance.
摘要翻译： 一种形成发光半导体器件的方法包括制造包括有源区的层叠层，并将包括载流子限制半导体层的结构晶片粘合到堆叠。 发光半导体器件包括具有第一导电类型的第一半导体的第一载流子限制层，有源区和设置在有源区和第一载流子限制层之间的晶片接合界面。 发光半导体器件还可以包括具有第二导电类型的第二半导体的第二载流子限制层，其中有源区域设置在第一载流子限制层和第二载流子限制层之间。 晶片接合限制层提供增强的载体限制和装置性能。
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公开(公告)号：US06504171B1
公开(公告)日：2003-01-07
申请号：US09490777
申请日：2000-01-24
申请人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
发明人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
IPC分类号： H01L2906
摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.
摘要翻译： 发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率 在有源区域的发光有源层（即，跨过有源区域）的分布曲线。 啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布 活性区内的组成。 因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。 器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。 发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。
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66.发明授权Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。
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公开(公告)号：US09768353B2
公开(公告)日：2017-09-19
申请号：US15426662
申请日：2017-02-07
申请人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelein J. F. David
发明人： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelein J. F. David
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
摘要： A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
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68.发明授权Method and system for dicing substrates containing gallium and nitrogen material with conductive core via structures 有权用于通过结构将具有导电芯的镓和氮材料切割成基底的方法和系统公开(公告)号：US08911518B1
公开(公告)日：2014-12-16
申请号：US13491483
申请日：2012-06-07
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/025 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： The present disclosure relates generally to semiconductor techniques. More specifically, embodiments of the present disclosure provide methods for efficiently dicing substrates containing gallium and nitrogen material. Additionally, the present disclosure provides techniques resulting in an optical device comprising a substrate having a dislocation bundle center being used as a conductive region for a contact.
摘要翻译： 本公开一般涉及半导体技术。 更具体地，本公开的实施例提供了用于有效地切割含有镓和氮材料的衬底的方法。 另外，本公开提供了一种技术，其导致包括具有位错束中心的基板的光学装置用作接触的导电区域。
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公开(公告)号：US08482104B2
公开(公告)日：2013-07-09
申请号：US13346507
申请日：2012-01-09
IPC分类号： H01L29/20
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/2003
摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。
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公开(公告)号：US20120241798A1
公开(公告)日：2012-09-27
申请号：US13459279
申请日：2012-04-30
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
摘要翻译： 本发明的实施方案包括包含与主体结合的主体和种子层的基板，以及包括设置在种子层上生长的n型区域和p型区域之间的发光层的半导体结构。 在垂直于半导体结构的生长方向的方向上的折射率的变化设置在主体和发光层之间。
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