公开(公告)号：US20140077318A1

公开(公告)日：2014-03-20

申请号：US13617432

申请日：2012-09-14

申请人： Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

发明人： Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

摘要翻译： 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

公开(公告)号：US08670170B2

公开(公告)日：2014-03-11

申请号：US13238139

申请日：2011-09-21

申请人： Ming-Chieh Chou ,  Yao-Hui Lee ,  Han-Wei Su ,  Yu-Jen Wang

发明人： Ming-Chieh Chou ,  Yao-Hui Lee ,  Han-Wei Su ,  Yu-Jen Wang

IPC分类号： G02B26/08

CPC分类号： G02B26/0841 ,  G02B26/101

摘要： An optical scanning projection system includes a scanning light source component, a second reflecting element, a transparent element, a scanning element, a photosensitive element and a control module. The transparent element receives a main light beam emitted by the scanning light source component and reflects a part of the main light beam to be a reflected light. The reflected light is reflected by the second reflecting element, and the scanning element reflects the reflected light from the second reflecting element in a scanning manner. The photosensitive element receives the reflected light from the scanning element and outputs a sensing signal, and the control module actuates or stops actuating the scanning light source component according to the sensing signal. Therefore, when the scanning element is damaged, the control module may instantly stop actuating the scanning light source component, thereby enhancing the using safety of the optical scanning projection system.

摘要翻译： 光学扫描投影系统包括扫描光源组件，第二反射元件，透明元件，扫描元件，感光元件和控制模块。 透明元件接收由扫描光源组件发射的主光束并将主光束的一部分反射成反射光。 反射光被第二反射元件反射，扫描元件以扫描方式反射来自第二反射元件的反射光。 感光元件接收来自扫描元件的反射光并输出感测信号，并且控制模块根据感测信号来驱动或停止启动扫描光源部件。 因此，当扫描元件损坏时，控制模块可以立即停止致动扫描光源部件，从而提高光学扫描投影系统的使用安全性。

公开(公告)号：US20130230741A1

公开(公告)日：2013-09-05

申请号：US13409456

申请日：2012-03-01

申请人： Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

发明人： Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

IPC分类号： G11B5/64 ,  G11B5/84

CPC分类号： G01R33/098 ,  G11B5/82 ,  G11C11/161 ,  H01F10/123 ,  H01F10/16 ,  H01F10/3231 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

摘要： A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness

摘要翻译： 使用硼含量为25〜40原子％并且厚度<20埃的CoFeB或CoFeNiB磁性层来实现磁性器件中的高垂直磁各向异性和增强的热稳定性。 将Co，Ni，Fe或其合金制成的除尘层添加到CoFeB层的顶表面和底表面，以增加磁阻以及改善Hc和Hk。 另一实施例包括在CoFeB自由层中的非磁性金属插入。 具有升高的B含量的CoFeB层可以作为自由层偶极层或参考层并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 热稳定性增加，使得在退火至至少400℃1小时后保留大量的Hk。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US20120154882A1

公开(公告)日：2012-06-21

申请号：US13238139

申请日：2011-09-21

申请人： Ming-Chieh CHOU ,  Yao-Hui Lee ,  Han-Wei Su ,  Yu-Jen Wang

发明人： Ming-Chieh CHOU ,  Yao-Hui Lee ,  Han-Wei Su ,  Yu-Jen Wang

IPC分类号： G02B26/08

CPC分类号： G02B26/0841 ,  G02B26/101

摘要： An optical scanning projection system includes a scanning light source component, a second reflecting element, a transparent element, a scanning element, a photosensitive element and a control module. The transparent element receives a main light beam emitted by the scanning light source component and reflects a part of the main light beam to be a reflected light. The reflected light is reflected by the second reflecting element, and the scanning element reflects the reflected light from the second reflecting element in a scanning manner. The photosensitive element receives the reflected light from the scanning element and outputs a sensing signal, and the control module actuates or stops actuating the scanning light source component according to the sensing signal. Therefore, when the scanning element is damaged, the control module may instantly stop actuating the scanning light source component, thereby enhancing the using safety of the optical scanning projection system.

摘要翻译： 光学扫描投影系统包括扫描光源组件，第二反射元件，透明元件，扫描元件，感光元件和控制模块。 透明元件接收由扫描光源组件发射的主光束并将主光束的一部分反射成反射光。 反射光被第二反射元件反射，扫描元件以扫描方式反射来自第二反射元件的反射光。 感光元件接收来自扫描元件的反射光并输出感测信号，并且控制模块根据感测信号来驱动或停止启动扫描光源部件。 因此，当扫描元件损坏时，控制模块可以立即停止致动扫描光源部件，从而提高光学扫描投影系统的使用安全性。

公开(公告)号：US20110143514A1

公开(公告)日：2011-06-16

申请号：US12754451

申请日：2010-04-05

申请人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

发明人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC分类号： H01L21/28

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

摘要： Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

公开(公告)号：US20100289382A1

公开(公告)日：2010-11-18

申请号：US12843239

申请日：2010-07-26

申请人： Yi-Cheng CHEN ,  Yu-Jen Wang ,  Chien Li ,  Chien-Shien Yeh

发明人： Yi-Cheng CHEN ,  Yu-Jen Wang ,  Chien Li ,  Chien-Shien Yeh

IPC分类号： H02N2/04

CPC分类号： H02N2/026 ,  H02N2/002 ,  H02N2/0055

摘要： An ultrasonic linear motor includes a substrate; a vibrator disposed on the substrate having an oblique or curved face at two sides thereof; and a slider having clamping portions at two sides thereof for correspondingly contacting with the two side faces of the vibrator and the substrate surfaces, wherein the vibrator is for generating a driving force to the slider while connecting with a power supply, such that the clamping portions of the slider slides with respect to the two side surfaces of the vibrator and with respect to the substrate surface, thereby generating a linear translation. The present invention adopts a simple structure having few elements that enables easy manufacturing and integration with other elements, thus reducing manufacturing cost.

摘要翻译： 超声波线性电动机包括：基板; 设置在所述基板上的振动器，在其两侧具有倾斜或弯曲面; 以及滑块，其具有在其两侧的夹持部分，用于相应地接触所述振动器的两个侧面和所述基板表面，其中所述振动器用于在与电源连接的同时向所述滑块产生驱动力，使得所述夹紧部分 滑块相对于振动器的两个侧表面相对于基板表面滑动，从而产生线性平移。 本发明采用具有很少元件的简单结构，能够容易地制造和与其它元件集成，从而降低制造成本。

公开(公告)号：US20100265759A1

公开(公告)日：2010-10-21

申请号：US12687720

申请日：2010-01-14

申请人： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

发明人： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.

摘要翻译： 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）器件的MRAM单元和具有串联耦合到MTJ器件的源极 - 漏极路径的字线选择器。 负极衬底偏置电压连接到字线选择器的主体以增加字线选择器的驱动电流。 字线选择器的阈值电压也减小。

公开(公告)号：US20100258886A1

公开(公告)日：2010-10-14

申请号：US12422579

申请日：2009-04-13

申请人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

发明人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

摘要： The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.

摘要翻译： 本公开提供一种半导体存储器件。 该器件包括在半导体衬底上的底部电极; 设置在底部电极上的反铁磁层; 设置在反铁磁层上的钉扎层; 设置在被钉扎层上的阻挡层; 设置在阻挡层上的第一铁磁层; 设置在所述第一铁磁层上的缓冲层，所述缓冲层包括钽; 设置在所述缓冲层上的第二铁磁层; 以及设置在第二铁磁层上的顶电极。

公开(公告)号：US20100139767A1

公开(公告)日：2010-06-10

申请号：US12472359

申请日：2009-05-26

申请人： Jui-Ching Hsieh ,  Pin Chang ,  Chung-De Chen ,  Li-Chi Pan ,  Yu-Jen Wang ,  Chin-Horng Wang

发明人： Jui-Ching Hsieh ,  Pin Chang ,  Chung-De Chen ,  Li-Chi Pan ,  Yu-Jen Wang ,  Chin-Horng Wang

IPC分类号： H01L31/024 ,  H01L23/34 ,  H01L33/00 ,  H01L21/50

CPC分类号： H01L23/3672 ,  H01L23/42 ,  H01L31/052 ,  H01L33/62 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/16 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/013

摘要： A chip package structure including a heat dissipation substrate, a chip and a heterojunction heat conduction buffer layer is provided. The chip is disposed on the heat dissipation substrate. The heterojunction heat conduction buffer layer is disposed between the heat dissipation substrate and the chip. The heterojunction heat conduction buffer layer includes a plurality of pillars perpendicular to the heat dissipation substrate. The aspect ratio of each pillar is between about 3:1 and 50:1.

摘要翻译： 提供了包括散热基板，芯片和异质结导热缓冲层的芯片封装结构。 芯片设置在散热基板上。 异质结导热缓冲层设置在散热基板和芯片之间。 异质结导热缓冲层包括垂直于散热基板的多个支柱。 每个柱的纵横比在约3:1至50:1之间。

公开(公告)号：US07723128B2

公开(公告)日：2010-05-25

申请号：US12032973

申请日：2008-02-18

申请人： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

发明人： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L43/08 ,  H01L43/12

摘要： A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.

摘要翻译： 形成集成电路的方法包括形成磁隧道结（MTJ）层; 蚀刻MTJ层以形成MTJ电池; 以及在MTJ电池的侧壁上形成电介质覆盖层，其中形成电介质覆盖层的步骤是用蚀刻MTJ层的步骤进行的。