公开(公告)号：US10174406B2

公开(公告)日：2019-01-08

申请号：US13552939

申请日：2012-07-19

申请人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

发明人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

IPC分类号： C22C9/00 ,  C22F1/08

摘要： A sheet material of a copper alloy has a chemical composition comprising 1.2 to 5.0 wt % of titanium, and the balance being copper and unavoidable impurities, the material having a mean crystal grain size of 5 to 25 μm and (maximum crystal grain size−minimum crystal grain size)/(mean crystal grain size) being 0.20 or less, assuming that the maximum, minimum and mean values of mean values, each of which is the mean value of crystal grain sizes in a corresponding one of a plurality of regions which are selected from the surface of the sheet material at random and which have the same shape and size, are the maximum, minimum and mean crystal grain sizes, respectively, and the material having a crystal orientation satisfying I{420}/I0{420}>1.0, assuming that the intensities of X-ray diffraction on the {420} crystal plane of the surface of the material and the standard powder of pure copper are I{420} and I0{420}, respectively.

公开(公告)号：US09905951B2

公开(公告)日：2018-02-27

申请号：US14384972

申请日：2013-03-01

申请人： DOWA METALTECH CO., LTD.

发明人： Keisuke Shinohara ,  Masafumi Ogata ,  Hiroshi Miyazawa

IPC分类号： B32B15/01 ,  H01R13/03 ,  C25D3/46 ,  C25D5/10 ,  C25D5/34 ,  H01H1/02

CPC分类号： H01R13/03 ,  C25D3/46 ,  C25D5/10 ,  C25D5/34 ,  H01H1/02 ,  Y10T428/12896 ,  Y10T428/24355

摘要： There is provided a silver-plated product wherein a silver plating film having a thickness of not greater than 10 micrometers is formed on a base material of copper or a copper alloy and wherein the surface of the silver plating film has an arithmetic average roughness Ra of not greater than 0.1 micrometers, and the silver plating film has a {111} orientation ratio of not less than 35%.

公开(公告)号：US09683307B2

公开(公告)日：2017-06-20

申请号：US14351713

申请日：2012-10-18

申请人： DOWA METALTECH CO., LTD.

发明人： Kentaro Arai ,  Hiroshi Miyazawa

IPC分类号： C25D17/06 ,  C25D17/00 ,  C25D7/06 ,  C25D5/02

CPC分类号： C25D17/06 ,  C25D5/022 ,  C25D7/0635 ,  C25D7/0671 ,  C25D7/0685 ,  C25D17/00

摘要： A partial plating device includes a drum jig which has a plurality of positioning pins provided on the outer peripheral surface thereof, and which feeds a metal member around the outer periphery thereof by engaging the metal member with the positioning pins; a rotating shaft which rotatably supports the drum jig, a jet unit that supplies plating liquid to the metal member, and a brake unit that reduces the circumferential speed of the drum jig, and which is fitted to the rotating shaft. A plating device and a partial plating method in which plating is not carried out on the first region of a metal member on the carrying-in side of the drum jig, but in which plating is carried out on the second region of a metal member on the carrying-out side.

公开(公告)号：US20160211195A1

公开(公告)日：2016-07-21

申请号：US14917095

申请日：2014-09-02

申请人： DOWA METALTECH CO., LTD.

发明人： Naoya Sunachi ,  Hideyo Osanai ,  Satoru Kurita

IPC分类号： H01L23/492 ,  H01L21/48 ,  H01L23/373 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/4924 ,  H01L21/4846 ,  H01L21/4878 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05644 ,  H01L2224/27442 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/29394 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/75315 ,  H01L2224/83009 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83385 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H05K1/053 ,  H05K3/3431 ,  H05K2203/0307 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In a method for producing an electronic part mounting substrate wherein an electronic part 14 is mounted on one major surface (a surface to which the electronic part 14 is to be bonded) of the metal plate 10 of copper, or aluminum or the aluminum alloy (when a plating film 20 of copper is formed on the surface), the one major surface of the metal plate 10 (or the surface of the plating film 20 of copper) is surface-machined to be coarsened so as to have a surface roughness of not less than 0.4 μm, and then, a silver paste is applied on the surface-machined major surface (or the surface-machined surface of the plating film 20 of copper) to arrange the electronic part 14 thereon to sinter silver in the silver paste to form a silver bonding layer 12 to bond the electronic part 14 to the one major surface of the metal plate 10 (or the surface of the plating film 20 of copper) with the silver bonding layer 12.

摘要翻译： 在电子部件安装基板的制造方法中，电子部件14安装在铜或铝或铝合金的金属板10的一个主表面（电子部件14的要被接合的表面）上 当在表面上形成铜的镀膜20时），将金属板10的一个主表面（或铜的镀膜20的表面）进行表面加工，粗化，使其表面粗糙度 不小于0.4μm，然后在表面加工的主表面（或铜的镀膜20的表面加工表面）上施加银膏，以将电子部件14布置在银膏中烧结银 形成银结合层12，用银接合层12将电子部件14与金属板10的一个主表面（或铜的镀膜20的表面）接合。

公开(公告)号：US20150284296A1

公开(公告)日：2015-10-08

申请号：US14443505

申请日：2012-11-20

申请人： DOWA METALTECH CO., LTD. ,  TOKUYAMA CORPORATION

发明人： Hideyo Osanai ,  Yukihiro Kitamura ,  Hiroto Aoki ,  Yukihiro Kanechika ,  Ken Sugawara ,  Yasuko Takeda

IPC分类号： C04B37/02 ,  B32B18/00 ,  C04B35/581 ,  B32B15/04 ,  C04B41/91 ,  B23K1/19

CPC分类号： C04B37/02 ,  B23K1/19 ,  B32B15/04 ,  B32B18/00 ,  C04B35/581 ,  C04B37/026 ,  C04B41/91 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/366 ,  C04B2237/407 ,  C04B2237/52 ,  C04B2237/704 ,  C04B2237/706 ,  H01L23/3735 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/022 ,  H05K3/38 ,  Y10T428/24355 ,  H01L2924/00

摘要： After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 μm, a ten-point average roughness Rz of 0.7 to 1.1 μm and a maximum height Ry of 0.9 to 1.7 μm while causing the ceramic substrate to have a flexural strength of not higher than 500 MPa and causing the thickness of a residual stress layer 10a formed along the surface of the ceramic substrate 10 to be 25 μm or less, the metal plate 14 of copper or a copper alloy is bonded to the ceramic substrate 10, which is obtained by the wet blasting treatment, via a brazing filler metal 12 to produce a metal/ceramic bonding substrate which has an excellent bonding strength of the ceramic substrate 10 to the metal plate 14 and which has an excellent heat cycle resistance.

摘要翻译： 在将含有液体中的作为磨粒的球状氧化铝的浆料喷射到氮化铝烧结体的陶瓷基板10的表面的湿式喷砂处理之后，陶瓷基板10具有不高于-50的残余应力 并且使得与金属板14接​​合的陶瓷基板10的表面的算术平均粗糙度Ra为0.15〜0.30μm，十点平均粗糙度Rz为0.7〜1.1μm，最大高度Ry为0.9 使陶瓷基板具有不高于500MPa的弯曲强度，并使沿陶瓷基板10的表面形成的残余应力层10a的厚度为25μm以下，金属板14为 通过钎焊金属12将铜或铜合金结合到通过湿式喷砂处理获得的陶瓷基板10上，以制造具有优异的陶瓷结合强度的金属/陶瓷接合基板 并且具有优异的耐热循环性。

公开(公告)号：US20150229092A1

公开(公告)日：2015-08-13

申请号：US14693990

申请日：2015-04-23

申请人： Yazaki Corporation ,  DOWA METALTECH CO., LTD.

发明人： Atsushi KUBODERA ,  Hisashi SUDA

IPC分类号： H01R43/16

CPC分类号： H01R43/16 ,  C22C9/00 ,  C22C9/06 ,  H01R13/03 ,  H01R13/11 ,  Y10T29/49204

摘要： A female terminal includes a box portion which is formed into a quadrangular prism-like shape so as for a tab of a male terminal to fit therein by bending a copper alloy plate which is obtained by being continuously and repeatedly bent before an age heat treatment is applied thereto, which has a proof stress of 700 MPa or larger and a width of 10 mm or larger and in which no crack is produced therein when bent 180 degrees about a bending axis which is at right angle to a rolling direction of the copper alloy plate. The box portion comprises notches which are formed in inner sides of bent portions produced by bending the copper alloy plate. A depth of the notch is set to be in the range from ¼ to ½ of a thickness of the copper alloy plate.

摘要翻译： 阴端子包括形成为四边形棱柱形状的盒部，以便通过弯曲铜合金板而将阳端子的突片装配在其中，该铜合金板在老化热处理之前被连续且重复地弯曲而获得 其应用为700MPa以上，宽度为10mm以上，在与铜合金的轧制方向成直角的弯曲轴弯曲180°的状态下不产生裂纹 盘子。 盒部分包括形成在通过弯曲铜合金板而产生的弯曲部分的内侧中的凹口。 凹口的深度设定在铜合金板的厚度的1/4至1/2的范围内。

公开(公告)号：US09034123B2

公开(公告)日：2015-05-19

申请号：US12068795

申请日：2008-02-12

申请人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

发明人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

IPC分类号： C22C9/06 ,  C22F1/08 ,  H01R13/03

CPC分类号： C22C9/06 ,  C22F1/08 ,  H01R13/03

摘要： This invention provides a copper alloy sheet material containing, in mass %, Ni: 0.7%-4.2% and Si: 0.2%-1.0%, optionally containing one or more of Sn: 1.2% or less, Zn: 2.0% or less, Mg: 1.0% or less, Co: 2.0% or less, and Fe: 1.0% or less, and a total of 3% or less of one or more of Cr, B, P, Zr, Ti, Mn and V, the balance being substantially Cu, and having a crystal orientation satisfying Expression (1): I{420}/I0{420}>1.0  (1), where I{420} is the x-ray diffraction intensity from the {420} crystal plane in the sheet plane of the copper alloy sheet material and I0{420} is the x-ray diffraction intensity from the {420} crystal plane of standard pure copper powder. The copper alloy sheet material has highly improved strength, post-notching bending workability, and stress relaxation resistance property.

摘要翻译： 本发明提供一种铜合金板材，其以质量％计含有Ni：0.7％〜4.2％，Si：0.2％-1.0％，任选地含有Sn：1.2％以下，Zn：2.0％以下中的一种以上， Mg：1.0％以下，Co：2.0％以下，Fe：1.0％以下，Cr，B，P，Zr，Ti，Mn，V中的1种以上的合计3％以下， 余量基本上为Cu，并且具有满足表达式（1）的晶体取向：I {420} / I0 {420}> 1.0（1）其中I {420}是{420}晶面的x射线衍射强度 在铜合金板材的片材平面中，I0 {420}是标准纯铜粉末{420}晶面的x射线衍射强度。 铜合金板材的强度，后切口弯曲加工性和耐应力松弛性能具有很高的改进。

公开(公告)号：US08992702B2

公开(公告)日：2015-03-31

申请号：US12805055

申请日：2010-07-09

申请人： Weilin Gao ,  Akira Sugawara ,  Ryosuke Miyahara ,  Hisashi Suda

发明人： Weilin Gao ,  Akira Sugawara ,  Ryosuke Miyahara ,  Hisashi Suda

IPC分类号： C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22F1/08 ,  C22C9/10

CPC分类号： C22C9/06 ,  C22C9/10 ,  C22F1/08 ,  H01B1/026

摘要： There is provided a copper alloy sheet including 1.0 to 3.5 mass % Ni, 0.5 to 2.0 mass % Co, and 0.3 to 1.5 mass % Si, a Co/Ni mass ratio being 0.15 to 1.5, an (Ni+Co)/Si mass ratio being 4 to 7, and a balance being composed of Cu and an unavoidable impurity, wherein in observation results of a crystal grain boundary property and crystal orientation by EBSP measurement, a density of twin boundaries among all crystal grain boundaries is 40% or more and an area ratio of crystal grains with Cube orientation is 20% or more, on a rolled surface.

摘要翻译： 提供了含有1.0〜3.5质量％的Ni，0.5〜2.0质量％的Co和0.3〜1.5质量％的Si，Co / Ni质量比为0.15〜1.5，（Ni + Co）/ Si质量 比例为4〜7，余量由Cu和不可避免的杂质构成，其中，通过EBSP测定，在晶界特性和晶体取向的观察结果中，所有晶粒边界的双边界密度为40％以上 并且在轧制表面上具有Cube取向的晶粒的面积比为20％以上。

公开(公告)号：US20140057131A1

公开(公告)日：2014-02-27

申请号：US14006546

申请日：2011-03-29

申请人： Hideyo Osanai ,  Takayuki Takahashi ,  Satoru Ideguchi ,  Hirotaka Kotani

发明人： Hideyo Osanai ,  Takayuki Takahashi ,  Satoru Ideguchi ,  Hirotaka Kotani

IPC分类号： H05K1/05 ,  B22D19/00 ,  B22D19/04

CPC分类号： H05K1/053 ,  B22D19/0081 ,  B22D19/04 ,  H01L21/481 ,  H01L21/4871 ,  H01L23/3735 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/022 ,  H05K2201/09136 ,  H05K2201/2009 ,  H05K2203/128 ,  Y10T428/12618 ,  Y10T428/2457 ,  Y10T428/2462 ,  Y10T428/24942 ,  H01L2924/00

摘要： A metal/ceramic bonding substrate includes: a ceramic substrate; a metal plate bonded directly to one side of the ceramic substrate; a metal base plate bonded directly to the other side of the ceramic substrate; and a reinforcing member having a higher strength than that of the metal base plate, the reinforcing member being arranged so as to extend from one of both end faces of the metal base plate to the other end face thereof without interrupting that the metal base plate extends between a bonded surface of the metal base plate to the ceramic substrate and the opposite surface thereof.

摘要翻译： 金属/陶瓷接合基板包括：陶瓷基板; 直接结合在陶瓷基板的一侧的金属板; 金属基板直接结合到陶瓷基板的另一侧; 所述加强构件具有比所述金属基板高的强度，所述加强构件被布置成从所述金属基板的两个端面之一延伸到所述另一端面，而不会中断所述金属基板延伸 在金属基板与陶瓷基板的接合面与其相对面之间。

公开(公告)号：US20120305292A1

公开(公告)日：2012-12-06

申请号：US13521928

申请日：2011-01-12

申请人： Hisashi Hori ,  Takanori Kokubo ,  Hideyo Osanai ,  Takayuki Takahashi ,  Kunihiko Chihara

发明人： Hisashi Hori ,  Takanori Kokubo ,  Hideyo Osanai ,  Takayuki Takahashi ,  Kunihiko Chihara

IPC分类号： H05K7/20 ,  B23K31/02

CPC分类号： H05K1/0201 ,  H01L23/3735 ,  H01L23/473 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/0058 ,  H01L2924/00

摘要： There is provide a liquid-cooled integrated substrate which has reduced material cost and processing cost, is reduced in warpage (shape deformation) as an integrated substrate, and has excellent strength and heat radiation performance, and a manufacturing method of the liquid-cooled integrated substrate. There is provided a liquid-cooled integrated substrate 1 in which a metal circuit board 15 made of aluminum or an aluminum alloy is bonded to one surface of a ceramic substrate 10, one surface of a plate-like metal base plate 20 made of aluminum or an aluminum alloy is bonded to another surface of the ceramic substrate 10, and a liquid-cooling type radiator 30 composed of an extrusion material is bonded to another surface of the metal base plate 20, wherein a relation between a thickness t1 of the metal circuit board 15 and a thickness t2 of the metal base plate 20 satisfies t2/t1≧2 where the thickness t1 of the metal circuit board 15 is 0.4 to 3 mm and the thickness t2 of the metal base plate 20 is 0.8 to 6 mm.

摘要翻译： 提供了一种液体冷却的一体化基板，其具有降低的材料成本和加工成本，减少作为一体基板的翘曲（形状变形），并且具有优异的强度和散热性能，以及液冷集成的制造方法 基质。 提供了一种液体冷却集成基板1，其中由铝或铝合金制成的金属电路板15结合在陶瓷基板10的一个表面上，由铝制成的板状金属基板20的一个表面 将铝合金结合到陶瓷基板10的另一表面，将由挤出材料构成的液冷式散热器30接合到金属基板20的另一个表面，其中金属电路的厚度t1 板15和金属基板20的厚度t2满足t2 /t1≥2，其中金属电路板15的厚度t1为0.4〜3mm，金属基板20的厚度t2为0.8〜6mm。