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    MEMS device and fabrication method
    67.
    发明授权
    MEMS device and fabrication method 有权
    MEMS器件及其制造方法

    公开(公告)号：US09371223B2

    公开(公告)日：2016-06-21

    申请号：US14314703

    申请日：2014-06-25

    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

    Inventor： Xuanjie Liu ,  Hongmei Xie ,  Liangliang Guo

    IPC: H01L41/09 ,  B81C1/00

    CPC classification number: B81C1/00246 ,  B81B7/007 ,  B81B2207/015 ,  B81B2207/094 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2203/0109 ,  B81C2203/036 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L41/0973

    Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.

    Abstract translation: 提供了MEMS器件及其形成方法。 第一金属互连结构形成在第一半导体衬底上以连接到第一半导体衬底中的CMOS控制电路。 在第一金属互连结构上形成具有空腔的接合层，然后与第二半导体衬底接合。 导电插塞穿过第二半导体衬底的第一区域，穿过接合层和第一金属互连结构。 第二金属互连结构包括形成在第二半导体衬底的第一区域上的第一端和连接到导电插塞的第二端。 通孔设置成穿过第二半导体衬底的第二区域并且通过位于空腔上的接合层的顶部以留下可移动电极以形成MEMS器件。

    MEMS DEVICE AND FABRICATION METHOD
    68.
    发明申请
    MEMS DEVICE AND FABRICATION METHOD 有权
    MEMS器件和制造方法

    公开(公告)号：US20150001632A1

    公开(公告)日：2015-01-01

    申请号：US14314703

    申请日：2014-06-25

    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

    Inventor： XUANJIE LIU ,  HONGMEI XIE ,  LIANGLIANG GUO

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00246 ,  B81B7/007 ,  B81B2207/015 ,  B81B2207/094 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2203/0109 ,  B81C2203/036 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L41/0973

    Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.

    Abstract translation: 提供了MEMS器件及其形成方法。 第一金属互连结构形成在第一半导体衬底上以连接到第一半导体衬底中的CMOS控制电路。 在第一金属互连结构上形成具有空腔的接合层，然后与第二半导体衬底接合。 导电插塞穿过第二半导体衬底的第一区域，穿过接合层和第一金属互连结构。 第二金属互连结构包括形成在第二半导体衬底的第一区域上的第一端和连接到导电插塞的第二端。 通孔设置成穿过第二半导体衬底的第二区域，并通过位于空腔上的接合层的顶部部分留下可动电极以形成MEMS器件。

    Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same
    69.
    发明授权
    Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same 有权
    微电子机械装置包括一个封装层，一个部分被去除以暴露一个基本平坦的表面，该表面具有一个设置在室外的部分，并且包括形成有集成电路的场区域，以及用于制造集成电路的方法

    公开(公告)号：US08421167B2

    公开(公告)日：2013-04-16

    申请号：US12952895

    申请日：2010-11-23

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: H01L21/00

    CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

    Microelectromechanical systems, and methods for encapsualting and fabricating same
    70.
    发明申请
    Microelectromechanical systems, and methods for encapsualting and fabricating same 有权
    微机电系统及其密封和制造方法

    公开(公告)号：US20080237756A1

    公开(公告)日：2008-10-02

    申请号：US11901826

    申请日：2007-09-18

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: H01L23/06 ,  H01L21/02

    CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

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