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公开(公告)号：US20170115566A1
公开(公告)日：2017-04-27
申请号：US15331056
申请日：2016-10-21
发明人： Jun Hatakeyama , Takashi Sasami , Masaki Ohashi
IPC分类号： G03F7/039 , G03F7/16 , C07D307/00 , G03F7/32 , C07C309/12 , C07J31/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , C07C69/74 , C07C69/753 , C07C69/757 , C07C69/78 , C07C69/95 , C07C205/06 , C07C205/11 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/12 , C07C309/20 , C07C309/24 , C07C309/73 , C07C2601/02 , C07C2601/04 , C07C2601/08 , C07C2601/14 , C07C2601/18 , C07C2601/20 , C07C2602/08 , C07C2602/10 , C07C2602/24 , C07C2602/28 , C07C2602/42 , C07C2603/16 , C07C2603/18 , C07C2603/24 , C07C2603/50 , C07C2603/68 , C07C2603/74 , C07C2603/86 , C07D307/00 , C07J31/006 , C07J43/003 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/2037 , G03F7/2059
摘要： A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of α-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.
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公开(公告)号：US20170115565A1
公开(公告)日：2017-04-27
申请号：US15292772
申请日：2016-10-13
发明人： Jun Hatakeyama , Masaki Ohashi
IPC分类号： G03F7/039 , C08F220/30 , G03F7/32 , G03F7/20 , G03F7/004 , G03F7/40 , C08F220/28 , G03F7/16
CPC分类号： G03F7/0397 , C08F220/22 , C08F220/24 , C08F220/28 , C08F220/30 , C08F220/34 , C08F220/38 , C08F224/00 , C08F228/02 , C08F2220/283 , C08F2220/301 , C08F2220/303 , C08F2220/382 , C08F2800/20 , G03F7/0045 , G03F7/0046 , G03F7/2004 , G03F7/2006
摘要： A resist composition comprising a base resin comprising recurring units having an acid labile group and recurring units containing a rubidium or cesium salt of α-fluorinated sulfonic acid exhibits a high sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.
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公开(公告)号：US09632417B2
公开(公告)日：2017-04-25
申请号：US14961197
申请日：2015-12-07
IPC分类号： G03F7/40 , G03F7/38 , G03F7/32 , G03F7/039 , G03F7/004 , G03F7/20 , C08L25/08 , C08L33/14 , C08L25/18
CPC分类号： G03F7/40 , C08L25/08 , C08L25/18 , C08L33/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2004 , G03F7/2037 , G03F7/2041 , G03F7/325 , G03F7/38
摘要： A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.
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公开(公告)号：US09632409B2
公开(公告)日：2017-04-25
申请号：US14899278
申请日：2014-05-21
IPC分类号： G03F7/027 , G03F7/004 , C07C69/753 , C07C69/96 , H01L51/00 , G03F7/038 , G03F7/039 , C07D401/14 , C07D401/04
CPC分类号： G03F7/0042 , C07C69/753 , C07C69/96 , C07C2604/00 , C07D401/04 , C07D401/14 , G03F7/0043 , G03F7/0045 , G03F7/0046 , G03F7/027 , G03F7/0382 , G03F7/0392 , H01L51/0047
摘要： The present disclosure relates to novel fullerene derivatives, positive and negative photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for high speed, fine pattern processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays, electron beam and other charged particle rays.
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65.发明申请公开(公告)号：US20170097564A1
公开(公告)日：2017-04-06
申请号：US15284721
申请日：2016-10-04
发明人： Takashi NAGAMINE , Kotaro ENDO , Hideto NITO
CPC分类号： G03F7/0045 , C07C63/08 , C07C65/05 , C07C65/10 , C07C321/28 , C07C381/12 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/325 , G03F7/38 , G03F7/40
摘要： A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Z− represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m. Z−(Mm+)1/m (d1)
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公开(公告)号：US09581915B2
公开(公告)日：2017-02-28
申请号：US13405233
申请日：2012-02-25
CPC分类号： G03F7/70466 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/2022 , G03F7/203 , G03F7/70575
摘要： A method for performing photolithography using a photo-resist is disclosed. The photo-resist comprises a first component and a second component. The method includes providing a substrate having a surface coated with the photo-resist and selectively illuminating a region of the surface of the photo-resist using light in a first wavelength band. The method further includes illuminating the entire surface of the photo-resist using light in a second wavelength band. The first and second wavelength bands are different and may not overlap. The method also includes performing a development process for the photo-resist upon illumination with the light of the first and second wavelength bands.
摘要翻译： 公开了一种使用光刻胶进行光刻的方法。 光致抗蚀剂包括第一组分和第二组分。 该方法包括提供具有涂覆有光致抗蚀剂的表面的基板，并且使用第一波长带中的光选择性地照射光致抗蚀剂表面的区域。 该方法还包括使用第二波长带中的光来照射光致抗蚀剂的整个表面。 第一和第二波段是不同的并且可能不重叠。 该方法还包括在用第一和第二波长带的光照射时执行光刻胶的显影处理。
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67.发明申请POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS 有权聚合物化合物，阳离子组合物，层压板和电阻图案处理公开(公告)号：US20170037167A1
公开(公告)日：2017-02-09
申请号：US15206684
申请日：2016-07-11
CPC分类号： C08F216/10 , C08F220/38 , G03F1/78 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/093 , G03F7/2059 , G03F7/322 , C08F216/02 , C08F212/32 , C08F216/1416 , C08F2220/382
摘要： A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mb+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.
摘要翻译： 该高分子化合物适合作为能够形成抗蚀剂膜的抗蚀剂组合物的基础树脂，其能够以极高的分辨率，小的LER和优异的矩形性形成图案。
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公开(公告)号：US09563128B2
公开(公告)日：2017-02-07
申请号：US14270271
申请日：2014-05-05
发明人： Deyan Wang
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0047 , G03F7/0382 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译： 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种可与抗蚀剂的树脂组分基本上不可混合的材料。 本发明的另外优选的光致抗蚀剂组合物包括1）Si取代，2）氟取代; 3）超支化聚合物; 和/或4）聚合物颗粒。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。
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公开(公告)号：US09563125B2
公开(公告)日：2017-02-07
申请号：US14950212
申请日：2015-11-24
发明人： Tatsuro Masuyama , Yuichi Mukai , Koji Ichikawa
IPC分类号： G03F7/004 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , C08F232/08 , H01L21/027 , C08F220/24 , C08F220/18 , C08F220/22
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/22 , C08F220/24 , C08F232/08 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , G03F7/38 , H01L21/0274
摘要： A non-ionic compound includes a group represented by formula (Ia): wherein R2 represents a group having a C5 to C18 alicyclic hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, Rf1 and Rf2 each independently represent a C1 to C4 perfluoroalkyl group, and * represents a binding site.
摘要翻译： 非离子性化合物包括由式（Ia）表示的基团：其中R 2表示具有可被氧原子或羰基代替的亚甲基的C 5〜C 18脂环族烃基的基团，Rf 1和Rf 2各自独立地表示 C1〜C4全氟烷基，*表示结合位点。
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公开(公告)号：US20170029547A1
公开(公告)日：2017-02-02
申请号：US15195387
申请日：2016-06-28
发明人： Jun HATAKEYAMA , Koji HASEGAWA
IPC分类号： C08F222/14 , C08F216/16 , G03F7/38 , G03F7/20 , G03F7/32 , C08F220/68 , G03F7/039
CPC分类号： C08F222/14 , C08F216/165 , C08F220/68 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/085 , G03F7/322 , G03F7/325
摘要： The present invention provides a resist composition containing a base resin composed of a polymer compound having a repeating unit in which a hydrogen atom of a carboxyl group is substituted with one or more acid-labile groups selected from groups shown by the following general formulae (1-1) to (1-5), wherein R1 to R5 represent a linear, branched, or cyclic alkyl group having 1 to 4 carbon atoms, an alkenyl group having 2 to 4 carbon atoms, or an alkynyl group having 2 to 4 carbon atoms; R6 represents a hydroxyl group or an alkoxy group or acyloxy group having 1 to 6 carbon atoms; and “m” represents 1 or 2. There can be provided a resist composition that can improve the dissolution contrast of a resist film and reduce the film shrinkage after PEB, and a patterning process using the same.
摘要翻译： 其中R 1至R 5表示具有1至4个碳原子的直链，支链或环状烷基，具有2至4个碳原子的烯基或具有2至4个碳原子的炔基; R6表示碳原子数1〜6的羟基或烷氧基或酰氧基， “m”表示1或2.可以提供能够提高抗蚀剂膜的溶解对比度并降低PEB后的膜收缩率的抗蚀剂组合物，以及使用其的图案形成工序。
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