公开(公告)号：US07847209B2

公开(公告)日：2010-12-07

申请号：US10530357

申请日：2003-10-09

Applicant: Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

Inventor： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

IPC: B23K9/00 ,  B23K9/02 ,  B23B9/04

CPC classification number: C23C16/515 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/40 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32311

Abstract: A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

Abstract translation: 通过等离子体CVD法形成金属氧化物膜的方法，其特征在于，在低输出区域中通过辉光放电主要使有机金属反应，然后通过高输出区域的辉光放电使有机金属与氧化性气体反应 通过有机层在塑料基板的表面上形成金属氧化物膜。 该方法根据等离子体CVD法在塑料基板的表面上形成具有优异的粘合性，柔软性和柔软性的薄膜。

公开(公告)号：US07554054B2

公开(公告)日：2009-06-30

申请号：US11237114

申请日：2005-09-28

Applicant: Yutaka Takada ,  Satoshi Fujii

Inventor： Yutaka Takada ,  Satoshi Fujii

IPC: B23K10/00

CPC classification number: H03B5/326 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32302 ,  H01J37/32311 ,  H01L21/67115 ,  H01L2924/0002 ,  H03H7/18 ,  H03H9/02582 ,  H05B6/686 ,  H05B6/705 ,  H05B6/806 ,  Y02B40/143 ,  H01L2924/00

Abstract: A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier and blocks a reflected wave directed from an object exposed with the microwave; an antenna that irradiates the microwave toward the object; and a metal cavity that traps therein the microwave irradiated to the object.

Abstract translation: 一种高频加热装置，包括：产生微波的固态振荡器; 放大器，其放大由固态振荡器产生的微波; 隔离器，其连接到放大器之后的级，并且阻挡从用微波暴露的对象引导的反射波; 将微波照射到物体上的天线; 以及在其中捕获照射到物体上的微波的金属腔。

公开(公告)号：US20080231380A1

公开(公告)日：2008-09-25

申请号：US10572532

申请日：2005-09-15

Applicant: Kibatsu Shinohara

Inventor： Kibatsu Shinohara

IPC: H03B9/10

CPC classification number: H03B9/10 ,  H01J23/34 ,  H01J37/32192 ,  H01J37/32201 ,  H05H1/46

Abstract: A magnetron (2), a launcher (4) which extracts the output power of the magnetron (2), an impedance generator (5) having one terminal connected to the output terminal of the launcher (4), and a reference signal supplier (6) connected to the other terminal of the impedance generator (5) are included. The reference signal supplier (6) supplies, to the magnetron (2), a reference signal lower in electric power and stabler in frequency than the output from the magnetron (2). The oscillation frequency of the magnetron (2) is locked to the frequency of the reference signal by injection of the reference signal. The impedance generator (5) can reduce the change width of the oscillation frequency of the magnetron (2) by adjusting the load impedance of the magnetron (2). This implements a magnetron oscillator (1) which has high frequency stability and does not fluctuate the frequency even when the output power is changed.

Abstract translation: 磁控管（2），提取磁控管（2）的输出功率的发射器（4），具有连接到发射器（4）的输出端子的一个端子的阻抗发生器（5）和参考信号供应器 包括连接到阻抗发生器（5）的另一端的6）。 参考信号供应器（6）向磁控管（2）提供电力较低的参考信号并且频率比来自磁控管（2）的输出更稳定。 通过注入参考信号，磁控管（2）的振荡频率被锁定到参考信号的频率上。 阻抗发生器（5）可以通过调整磁控管（2）的负载阻抗来减小磁控管（2）的振荡频率的变化宽度。 这实现了具有高频稳定性的磁控管振荡器（1），即使当输出功率改变时也不会使频率波动。

公开(公告)号：US20070176709A1

公开(公告)日：2007-08-02

申请号：US11343682

申请日：2006-01-31

Applicant: Lutfi Oksuz ,  Albert Ellingboe

Inventor： Lutfi Oksuz ,  Albert Ellingboe

IPC: H01P5/18

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32201 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

Abstract: A method and apparatus for producing a distributed plasma at atmospheric pressure. A distributed plasma can be produced at atmospheric pressure by using an inexpensive high frequency power source in communication with a waveguide having a plurality particularly configured couplers disposed therein. The plurality of particularly arranged couplers can be configured in the waveguide to enhance the electromagnetic field strength therein. The plurality of couplers have internal portions disposed inside the waveguide and spaced apart by a distance of ½ wavelength of the high frequency power source and external portions disposed outside the waveguide and spaced apart by a predetermined distance which is calculated to cause the electromagnetic fields in the external portions of adjacent couplers to couple and thereby further enhance the strength of the electromagnetic field in the waveguide. Plasma can be formed in plasma areas defined by gaps between electrodes disposed on the external portions.

Abstract translation: 一种用于在大气压下制造分布式等离子体的方法和装置。 通过使用与具有设置在其中的多个特别配置的耦合器的波导连通的便宜的高频电源，可以在大气压下产生分布式等离子体。 多个特别布置的耦合器可以配置在波导中以增强其中的电磁场强度。 多个耦合器具有设置在波导内部的内部部分，并且间隔开高频电源的1/2波长的距离和设置在波导外部的外部部分，并隔开预定距离，该预定距离被计算为使得电磁场在 相邻耦合器的外部部分耦合，从而进一步增强波导中电磁场的强度。 等离子体可以形成在由设置在外部部分上的电极之间的间隙限定的等离子体区域中。

公开(公告)号：US06653788B2

公开(公告)日：2003-11-25

申请号：US09977951

申请日：2001-10-17

Applicant: Toshio Ogura ,  Masumi Kuga ,  Tomokatsu Oguro ,  Toru Moriike

Inventor： Toshio Ogura ,  Masumi Kuga ,  Tomokatsu Oguro ,  Toru Moriike

IPC: H01J2550

CPC classification number: H01J37/32201 ,  H01J23/005 ,  H01J23/02 ,  H01J23/20 ,  H01J23/213 ,  H01J23/22 ,  H01J23/48 ,  H01J25/587 ,  H01J2223/05 ,  H01J2223/12 ,  H01J2223/14 ,  H01J2223/15

Abstract: A magnetron has an anode cylinder, a plurality of vanes extending radially inwardly from the anode cylinder, a cathode filament extending along a center axis of the anode cylinder, an output section including an antenna coupled to one of the vanes, and a magnetic circuit section for supplying a magnetic field into the anode cylinder, whereby the magnetron oscillates at a fundamental frequency in a range from 400 MHz to 600 MHz.

公开(公告)号：US5179264A

公开(公告)日：1993-01-12

申请号：US450343

申请日：1989-12-13

Applicant: Jerome J. Cuomo ,  Charles R. Guarnieri ,  Stanley Whitehair

Inventor： Jerome J. Cuomo ,  Charles R. Guarnieri ,  Stanley Whitehair

IPC: H05B6/64 ,  H05B6/68 ,  H05H1/46

CPC classification number: H01J37/32201 ,  H01J37/3222 ,  H05H1/46

Abstract: A solid state microwave generator is utilized as an excitation source for material/ plasma processes. The invention provides very close precise control of the solid state device's power levels to control the ultimate power output and frequency which control is not readily possible with vacuum tube devices. Utilizing the concepts of the invention the total power generated by the system may be easily varied and, further, the power may be easily monitored and used to control other device parameters such as frequency and the like. Because of the degree of control possible within the overall process system of the invention any measurable physical property of the process such as temperature, power, color (e.g., optical pyrometer), or the like that can be monitored and converted to a control signal can be utilized by the present system to carefully control the overall process conditions. These control features are lacking in currently available vacuum tube microwave devices. It is also probable that the overall cost of the solid state based microwave power generators systems will be far less than that of comparable tube type microwave generators.

公开(公告)号：US20240282554A1

公开(公告)日：2024-08-22

申请号：US18652609

申请日：2024-05-01

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Amormino ,  Hanh Nguyen ,  Kallol Bera ,  Philip Allan Kraus

IPC: H01J37/32 ,  H03F3/19 ,  H03F3/21

CPC classification number: H01J37/32201 ,  H01J37/32311 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/335 ,  H03F3/19 ,  H03F3/21

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

公开(公告)号：US12046453B2

公开(公告)日：2024-07-23

申请号：US17018532

申请日：2020-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Atsushi Kubo ,  Eiki Kamata ,  Nobuhiko Yamamoto

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01J37/3222 ,  C23C16/52 ,  H01J37/32266 ,  H01J37/32311 ,  H01L21/67288 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32293 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/202

Abstract: A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

公开(公告)号：US20240234098A1

公开(公告)日：2024-07-11

申请号：US18410958

申请日：2024-01-11

Applicant: NITRICITY INC.

Inventor： John A. SCHWALBE ,  Joshua M. MCENANEY ,  Sreekumar CHOCKALINGAM ,  Sami KILANI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32201 ,  H01J37/32522 ,  H01J2237/3321 ,  H01J2237/339

Abstract: Aspects of the present disclosure involve a plasma reactor system that includes a gas-flow-engineered reactor to more efficiently produce fixed nitrogen products. In some instances, the gas-flow-engineered reactor may include a gas vortex-inducing input mechanism and/or a quenching mechanism integrated or otherwise associated with the plasma reactor system.

公开(公告)号：US20240194450A1

公开(公告)日：2024-06-13

申请号：US17907857

申请日：2021-06-28

Applicant: Hitachi High-Tech Corporation

Inventor： Yasushi Sonoda ,  Motohiro Tanaka ,  Yusuke Nakatani

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32201 ,  H01J2237/327 ,  H01L21/67069

Abstract: A plasma processing device and method which allow control of a density ratio between ions and radicals, including a processing chamber, a radio frequency power supply which supplies microwave radio frequency power for plasma generation, a magnetic field generating mechanism which generates a magnetic field in the processing chamber, a sample stand disposed in the processing chamber, and a shielding plate disposed above the sample stand for shielding incidence of an ions onto the sample stand. The magnetic field generating mechanism includes a coil disposed around an outer periphery of the processing chamber, and a power supply connected to the coil. The mechanism allows a power supply of the magnetic field generating mechanism or the radio frequency power supply to control a plasma generating position with respect to the shielding plate, and to generate plasma by periodically changing the plasma generating position vertically with respect to the shielding plate.