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公开(公告)号：US20240038498A1
公开(公告)日：2024-02-01
申请号：US18486288
申请日：2023-10-13
发明人： Taehoon PARK , Jaihyung WON , Naeil LEE , Jinhyung PARK , Choonkum BAIK , Hyonam LIM
IPC分类号： H01J37/32 , C23C16/507 , C23C16/52 , C23C16/455
CPC分类号： H01J37/32183 , H01J37/321 , H01J37/32091 , H01J37/32568 , H01J37/3244 , C23C16/507 , C23C16/52 , C23C16/45565 , C23C16/4557 , H01J2237/332
摘要： A film deposition apparatus includes a reactive gas supply configured to supply a reactive gas to a first chamber; a source gas supply configured to supply a source gas to a second chamber; a first plasma mechanism configured to generate inductively coupled plasma for activating the reactive gas; a second plasma mechanism configured to generate capacitively coupled plasma for activating the reactive gas activated by the first plasma mechanism and the source gas; and a controller. The second plasma mechanism includes an upper electrode; a lower electrode opposite to the upper electrode; a first high-frequency power supply configured to apply a high-frequency power to the upper electrode via a first matcher; a second high-frequency power supply configured to apply a high-frequency power to the upper electrode via a second matcher; and a third matcher connected to the lower electrode. The third matcher includes a variable capacitor.
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公开(公告)号：US20240035164A1
公开(公告)日：2024-02-01
申请号：US18359731
申请日：2023-07-26
申请人： ASM IP Holding, B.V.
发明人： Jan Deckers , Eric James Shero
IPC分类号： C23C16/52 , C23C16/448 , H01L21/67 , C23C16/455 , G01N7/18
CPC分类号： C23C16/52 , C23C16/4481 , H01L21/67253 , C23C16/45553 , G01N7/18
摘要： The invention provides in method and systems for determining the amount of solid precursor in a precursor vessel of a semiconductor manufacturing process, wherein the amount of precursor in the precursor vessel is determined by measuring through monochromatic measurements an optical absorption in the process gas flowing from the precursor vessel to the process chamber.
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公开(公告)号：US20240035162A1
公开(公告)日：2024-02-01
申请号：US18156102
申请日：2023-01-18
发明人： Zhepeng CONG , Tao SHENG , Martin Jeffrey SALINAS
CPC分类号： C23C16/46 , C23C16/4408 , H01L21/681 , H01L21/67259 , H01L21/67017 , C23C16/52 , C23C16/4583
摘要： Embodiments described herein relate semiconductor manufacturing and processing. More particularly, a processing systems for auto correcting misalignments of substrates in process chambers is provided. The processing system includes a process chamber having a substrate support disposed within a chamber volume of the process chamber. The substrate support includes a pocket for receiving a substrate, and a plurality of flow conduits extending between a top surface of the pocket and a bottom surface of the substrate support. An imaging device is coupled to the process chamber and configured to monitor a position of a substrate when loaded in the pocket of the substrate support.
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公开(公告)号：US20240035153A1
公开(公告)日：2024-02-01
申请号：US18266264
申请日：2021-12-13
IPC分类号： C23C16/32 , C23C16/46 , C23C16/455 , C23C16/52 , C30B23/02 , C30B35/00 , C01B32/977
CPC分类号： C23C16/325 , C23C16/46 , C23C16/45512 , C23C16/52 , C30B23/02 , C30B35/007 , C01B32/977 , C01P2006/10 , C01P2006/80
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.g. 1)
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公开(公告)号：US11885015B2
公开(公告)日：2024-01-30
申请号：US17804174
申请日：2022-05-26
发明人： Katsumasa Yamaguchi , Tsubasa Yokoi
CPC分类号： C23C16/405 , C23C16/52 , C23C16/56
摘要： A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.
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66.发明公开公开(公告)号：US20240026567A1
公开(公告)日：2024-01-25
申请号：US18350517
申请日：2023-07-11
申请人： ASM IP Holding, B.V.
发明人： Rami Khazaka
IPC分类号： C30B25/16 , H01L21/02 , C23C16/455 , C23C16/52 , C23C16/24 , C30B25/12 , C30B29/06 , C30B29/68
CPC分类号： C30B25/165 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , C23C16/45529 , C23C16/45546 , C23C16/52 , C23C16/24 , C30B25/12 , C30B29/06 , C30B29/68 , H10B12/01
摘要： A method for forming an epitaxial stack on a plurality of substrates comprises providing a plurality of substrates to a process chamber and executing deposition cycles, wherein each deposition cycle comprises a first deposition pulse and a second deposition pulse. The epitaxial stack comprises a first epitaxial layer stacked alternatingly and repeatedly with a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer having a first native lattice parameter. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer having a second native lattice parameter, wherein the first native lattice parameter lies in a range within 1.5% larger than and 0.9% smaller than the second native lattice parameter.
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公开(公告)号：US20240026539A1
公开(公告)日：2024-01-25
申请号：US18197919
申请日：2023-05-16
发明人： Suncheul Kim , Donghyun LEE , Uihyoung LEE , Donghoon Han
IPC分类号： C23C16/52 , C23C16/505 , C23C16/448
CPC分类号： C23C16/52 , C23C16/505 , C23C16/4486
摘要： Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.
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公开(公告)号：US20240018660A1
公开(公告)日：2024-01-18
申请号：US18218441
申请日：2023-07-05
发明人： Hiroyuki MATSUURA
IPC分类号： C23C16/52 , H01J37/32 , C23C16/455
CPC分类号： C23C16/52 , H01J37/32449 , C23C16/45544 , C23C16/45536 , H01J37/32568 , H01J2237/3321
摘要： A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall configured to cover the opening and to define an internal space communicating with an inside of the processing container, a processing gas supply configured to supply a processing gas to the internal space, a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall, and a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space.
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公开(公告)号：US11873560B2
公开(公告)日：2024-01-16
申请号：US16088102
申请日：2017-03-15
IPC分类号： C23C16/52 , G05B23/02 , C23C16/455 , G05B19/048 , H01L21/67
CPC分类号： C23C16/52 , C23C16/45536 , C23C16/45544 , G05B19/048 , G05B23/0221 , H01L21/67253 , G05B2219/45026
摘要： Provided is an abnormality detection system that includes a first controller configured to control a substrate processing apparatus and a second controller configured to control a device provided in the substrate processing apparatus according to an instruction from the first controller, thereby detecting an abnormality in the device. The second controller includes a storage unit configured to collect status signals for the device for a predetermined time and at a predetermined sampling interval in a predetermined cycle and accumulate the collected status signals for the device, and the first controller includes an abnormality determination unit configured to acquire the accumulated status signals for the device from the second controller at a time interval equal to or longer than the predetermined time, and determine presence or absence of an abnormality in the device.
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70.发明公开公开(公告)号：US20240014032A1
公开(公告)日：2024-01-11
申请号：US18473625
申请日：2023-09-25
IPC分类号： H01L21/02 , C23C16/02 , C23C16/34 , C23C16/32 , C23C16/36 , C23C16/46 , C23C16/52 , C23C16/30
CPC分类号： H01L21/02271 , H01L21/0217 , H01L21/02126 , H01L21/02167 , C23C16/0218 , C23C16/345 , C23C16/325 , C23C16/36 , C23C16/46 , C23C16/52 , C23C16/308
摘要： There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.
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