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公开(公告)号：US20100206217A1
公开(公告)日：2010-08-19
申请号：US12439887
申请日：2007-08-31
Applicant: Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
Inventor： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada
CPC classification number: C23C16/01 , C23C16/27 , C23C16/56 , C25F3/00 , C30B29/04 , C30B31/22 , C30B33/06
Abstract: The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method.The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.
Abstract translation: 本发明提供一种用于分离金刚石的表面层的方法，其包括将离子注入金刚石以在金刚石的表面附近形成非金刚石层; 以及通过在电解液中跨越电极施加交流电压来蚀刻金刚石中的非金刚石层; 以及分离金刚石生长层的方法，其还包括根据上述方法在形成非金刚石层之后通过气相合成法生长金刚石的步骤。 本发明适用于各种单晶和多晶钻石。 更具体地，即使使用大的单晶金刚石，一部分单晶金刚石可以在相对较短的时间内以可重复使用的形式被有效地分离。
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公开(公告)号：US07772585B2
公开(公告)日：2010-08-10
申请号：US11446955
申请日：2006-06-06
Applicant: Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
Inventor： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
CPC classification number: C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
Abstract: A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
Abstract translation: 通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，产生在暴露部分“Pgr”上覆盖有小面的凸面小丘，从而形成氮化物半导体晶体衬底; 覆盖部分，不掩埋小面，保持凸面小丘在＆Pgr; 和网络凹面，不考虑小平面上的位错，形成凹陷凹陷，形成缺陷积聚区H，减小了小平面山丘的位错，改善了小丘到低缺陷密度单晶区Z，产生了坚固的 氮化物晶体，并将氮化物晶体切割和研磨成镜状氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。
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公开(公告)号：US07767021B2
公开(公告)日：2010-08-03
申请号：US11529115
申请日：2006-09-28
Applicant: Soo-Hyung Seo , Joon-Suk Song , Myung-Hwan Oh
Inventor： Soo-Hyung Seo , Joon-Suk Song , Myung-Hwan Oh
IPC: C30B25/00
Abstract: A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.
Abstract translation: SiC单晶的生长方法包括以下步骤：用于降低比表面积的高纯度SiC源，并且增加α相的比例，并使C的摩尔分数大于源中的Si的摩尔分数， 将SiC源提供到坩埚中，将SiC种子布置在坩埚中，并且通过加热SiC源来生长SiC单晶。
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64.发明授权Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法公开(公告)号：US07754012B2
公开(公告)日：2010-07-13
申请号：US12082745
申请日：2008-04-14
Applicant: Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
Inventor： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
CPC classification number: C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
Abstract: A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.
Abstract translation: 提供了高品质的III族氮化物晶体的制造方法。 通过该方法，将晶体原料溶液和含氮气体引入加热的反应器容器中，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置引入反应器容器，然后通过反应器容器的气体出口被排出到耐压容器的内部。 由于气体直接引入反应容器，因此可以防止附着在耐压容器等上的杂质进入晶体生长部位。 此外，气体流过反应器容器，以抑制气体入口处的蒸发的碱金属等的聚集，并且减少金属蒸气进入气体供应装置的流动。
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65.发明授权Highly aligned vertical GaN nanowires using submonolayer metal catalysts 有权使用亚单层金属催化剂的高度对准的垂直GaN纳米线公开(公告)号：US07745315B1
公开(公告)日：2010-06-29
申请号：US11866684
申请日：2007-10-03
Applicant: George T. Wang , Qiming Li , J. Randall Creighton
Inventor： George T. Wang , Qiming Li , J. Randall Creighton
IPC: H01L21/205 , C30B25/00 , C30B29/38 , C30B29/60
CPC classification number: H01L21/0254 , C30B11/12 , C30B25/00 , C30B29/406 , C30B29/60 , H01L21/0242 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , Y10S977/762 , Y10S977/816 , Y10S977/891
Abstract: A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.
Abstract translation: 使用单层或次单层数量的金属原子形成垂直取向的晶体取向的纳米线（纳米柱）的方法，以形成用作III族氮化物纳米线的MOCVD生长的催化剂的均匀尺寸的金属岛。
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Patent Agency Ranking
66.发明授权Nanowire-templated lateral epitaxial growth of non-polar group III nitrides 有权非极性III族氮化物的纳米线模板侧向外延生长公开(公告)号：US07670933B1
公开(公告)日：2010-03-02
申请号：US11866748
申请日：2007-10-03
Applicant: George T. Wang , Qiming Li , J. Randall Creighton
Inventor： George T. Wang , Qiming Li , J. Randall Creighton
IPC: H01L21/205 , C30B25/00 , C30B29/38 , C30B29/60
CPC classification number: H01L21/0242 , C30B25/005 , C30B25/02 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L21/02653 , Y10S117/902 , Y10S977/762 , Y10S977/816 , Y10S977/817 , Y10S977/821 , Y10S977/891
Abstract: A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
Abstract translation: 使用来自III族氮化物纳米线的横向生长来生长高质量非极性III族氮化物的方法。 纳米线模板侧向外延生长（NTLEG）的方法采用通过金属催化的金属有机化学气相沉积（MOCVD）生长的晶体取向的，基本上垂直的III族氮化物纳米线阵列作为实际无裂纹的侧向生长和聚结的模板 III族氮化物膜。 该方法不需要图案化或分离氮化物生长步骤。
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67.发明授权Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor 有权含Al的III-V族化合物半导体的气相生长方法，以及制造含有Al的III-V族化合物半导体的方法和装置公开(公告)号：US07645340B2
公开(公告)日：2010-01-12
申请号：US10509177
申请日：2003-04-07
Applicant: Akinori Koukitu , Yoshinao Kumagai , Tomohiro Marui
Inventor： Akinori Koukitu , Yoshinao Kumagai , Tomohiro Marui
IPC: C30B25/00
CPC classification number: C30B25/02 , C23C16/303 , C30B25/14 , C30B29/403 , Y10T117/10 , Y10T117/1016
Abstract: A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.
Abstract translation: 通过常规HVPE法生长含Al III-V族化合物半导体的晶体的方法，其特征在于它包括在700℃或更低的温度下使Al与卤化氢反应形成卤化物的步骤 的Al 该方法允许抑制氯化铝（AlCl）或溴化铝（AlBr）的形成，其与作为用于生长的反应容器的材料的石英剧烈反应，导致实现Al的气相生长 含有III-V族化合物半导体，其速率为100微米/小时或更高，这导致大量生产基板和具有令人满意的耐恶劣环境的半导体元件。
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68.发明授权Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them 失效精确定位的纳米晶须和纳米晶须阵列及其制备方法公开(公告)号：US07608147B2
公开(公告)日：2009-10-27
申请号：US10751944
申请日：2004-01-07
Applicant: Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Thomas M. I. Martensson
Inventor： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Thomas M. I. Martensson
IPC: C30B25/00
Abstract: A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbor. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.
Abstract translation: 纳米工程结构，其包括在预定空间配置中在衬底上的大于约1000纳米晶须的阵列，用于例如光子带隙阵列，其中每个纳米晶须位于与预定位置不超过约20％的距离内， 距离其最近的邻居的距离。 为了制造阵列，将一组催化材料的质量定位在表面上，加热并且引入气态物质，以便从每个物质形成催化种子颗粒并从催化种子颗粒生长 外延的是预定材料的纳米晶须，并且其中熔化时的每个质量与基底表面保持大致相同的界面，使得导致物质迁移穿过所述表面的力小于穿过基底上的润湿界面的保持力 表面。
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公开(公告)号：US20090175777A1
公开(公告)日：2009-07-09
申请号：US12245002
申请日：2008-10-03
Applicant: Geoffrey Alan SCARSBROOK , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Barbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
Inventor： Geoffrey Alan SCARSBROOK , Philip Maurice Martineau , John Lloyd Collins , Ricardo Simon Sussmann , Barbel Susanne Charlotte Dorn , Andrew John Whitehead , Daniel James Twitchen
CPC classification number: C30B29/04 , C30B25/00 , C30B25/105 , Y10T428/263 , Y10T428/30
Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
Abstract translation: 通过CVD制备并具有一种或多种电子特性的单晶金刚石; 使钻石适合电子应用。 还提供了制造单晶CVD金刚石的方法。
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70.发明申请公开(公告)号：US20090139401A1
公开(公告)日：2009-06-04
申请号：US11921681
申请日：2006-05-10
Applicant: Satoshi Takamizawa
Inventor： Satoshi Takamizawa
CPC classification number: B01D69/142 , B01D69/122 , B01J20/223 , C01B3/0015 , C07F1/005 , C08G73/0633 , C08G79/14 , C30B7/00 , C30B7/14 , C30B29/54 , C30B29/58 , Y02E60/328
Abstract: A large single crystal of a complex such as an organic carboxylic acid metal complex, which crystal is useful as an adsorbent of various gases and vapors of organic solvents and as a hydrogen-absorbing material, as well as a process for producing the crystal, is disclosed. Two layers wherein an upper layer thereof is constituted by a solution containing a metal salt and an organic carboxylic acid having a conjugated system, or a solution containing a metal salt of the organic carboxylic acid having a conjugated system, and wherein a lower layer of the two layers is constituted by a solvent which is not miscible with the solvent of the solution, is formed. Vapor of pyrazine or a substituted pyrazine from a solution of pyrazine or the substituted pyrazine is introduced into the upper layer to allow reaction, thereby forming a large single crystal(s) of the organic carboxylic acid metal complex at the interface between the two layers, which crystal(s) has (have) a longer side with a size of not less than 0.8 mm.
Abstract translation: 诸如有机羧酸金属络合物的复合物的大单晶，其可用作各种气体和有机溶剂的蒸气和吸收吸收材料的吸附剂，以及制备晶体的方法是 披露 两层，其上层由含有金属盐和具有共轭体系的有机羧酸的溶液构成，或含有具有共轭体系的有机羧酸的金属盐的溶液，其中， 形成两层由不溶于溶剂的溶剂的溶剂构成。 将吡嗪或取代的吡嗪的吡嗪或取代的吡嗪的蒸气引入上层以允许反应，从而在两层之间的界面处形成大的单晶有机羧酸金属络合物， 哪个晶体具有尺寸不小于0.8mm的长边。
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