Reducing the load on the bitlines of a ROM bitcell array

    公开(公告)号:US09898568B2

    公开(公告)日:2018-02-20

    申请号:US14748075

    申请日:2015-06-23

    CPC classification number: G06F17/5068 G06F17/5081 G06F2217/78

    Abstract: Systems, apparatuses, and methods for reducing the load on the bitlines of a ROM bitcell array are described. The connections between nets of a ROM bitcell array may be assigned based on their programmed values using a traditional approach. Then, a plurality of optimizations may be performed on the assignment of nets to reduce the load on the bitlines of the array. A first optimization may swap the connections between ground and bitline for the nets of a given column responsive to detecting that the number of connections to the corresponding bitline is greater than the number of connections to ground for the given column. A second optimization may remove the connection of a net to a bitline if three consecutive nets of a given column are connected to the bitline.

    Dynamic wavefront creation for processing units using a hybrid compactor

    公开(公告)号:US09898287B2

    公开(公告)日:2018-02-20

    申请号:US14682971

    申请日:2015-04-09

    Abstract: A method, a non-transitory computer readable medium, and a processor for repacking dynamic wavefronts during program code execution on a processing unit, each dynamic wavefront including multiple threads are presented. If a branch instruction is detected, a determination is made whether all wavefronts following a same control path in the program code have reached a compaction point, which is the branch instruction. If no branch instruction is detected in executing the program code, a determination is made whether all wavefronts following the same control path have reached a reconvergence point, which is a beginning of a program code segment to be executed by both a taken branch and a not taken branch from a previous branch instruction. The dynamic wavefronts are repacked with all threads that follow the same control path, if all wavefronts following the same control path have reached the branch instruction or the reconvergence point.

    PAIRED VALUE COMPARISON FOR REDUNDANT MULTI-THREADING OPERATIONS

    公开(公告)号:US20180039531A1

    公开(公告)日:2018-02-08

    申请号:US15231251

    申请日:2016-08-08

    Abstract: Techniques for performing redundant multi-threading (“RMT”) include the use of an RMT compare instruction by two program instances (“work-items”). The RMT compare instruction specifies a value from each work-item to be compared. Upon executing the RMT compare instructions, the work-items transmit the values to a hardware comparator unit. The hardware comparator unit compares the received values and performs an error action if the values do not match. The error action may include sending an error code in a return value back to the work-items that requested the comparison or emitting a trap signal. Optionally, the work-items also send addresses for comparison to the comparator unit. If the addresses and values match, then the comparator stores the value at the specified address. If either or both of the values or the addresses do not match, then the comparator performs an error action.

    COMMAND ARBITRATION FOR HIGH SPEED MEMORY INTERFACES

    公开(公告)号:US20180018291A1

    公开(公告)日:2018-01-18

    申请号:US15211815

    申请日:2016-07-15

    Abstract: In one form, a memory controller includes a command queue and an arbiter. The command queue receives and stores memory access requests. The arbiter includes a plurality of sub-arbiters for providing a corresponding plurality of sub-arbitration winners from among the memory access requests during a controller cycle, and for selecting among the plurality of sub-arbitration winners to provide a plurality of memory commands in a corresponding controller cycle. In another form, a data processing system includes a memory accessing agent for providing memory accesses requests, a memory system, and the memory controller coupled to the memory accessing agent and the memory system.

    WEAR-LIMITING NON-VOLATILE MEMORY
    700.
    发明申请

    公开(公告)号:US20170345512A1

    公开(公告)日:2017-11-30

    申请号:US15267092

    申请日:2016-09-15

    CPC classification number: G11C16/3495 G11C16/10 G11C16/26

    Abstract: A non-volatile memory device having at least one non-volatile flash memory formatted with physical addresses to read and write data that is organized into blocks of data, wherein the blocks of data are organized into pages of data, and wherein the pages of data are organized into cells of data. The non-volatile memory device includes a non-volatile memory controller to direct read and write requests to the non-volatile flash memory for the storage and retrieval of data. The non-volatile memory controller includes a flash translation layer to correlate read and write requests for data having a logical address between the reading and writing the data to physical address location of the non-volatile flash memory. The flash translation layer, when writing to a physical address location, chooses between a wear-leveling circuit and a wear-limiting circuit to select the physical address location.

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