公开(公告)号：US20080093611A1

公开(公告)日：2008-04-24

申请号：US11579194

申请日：2004-04-29

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

IPC分类号： H01L21/04 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。

公开(公告)号：US07329587B2

公开(公告)日：2008-02-12

申请号：US10561255

申请日：2004-06-24

申请人： Georg Bruederl ,  Berthold Hahn ,  Volker Haerle

发明人： Georg Bruederl ,  Berthold Hahn ,  Volker Haerle

IPC分类号： H01L21/46

CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/172 ,  H01L21/76254 ,  H01L21/78 ,  H01L33/0079

摘要： A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps: preparing a growth substrate wafer (1) substantially comprised of semiconductor material from a semiconductor material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based, forming in the growth substrate wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate wafer (1), joining the growth substrate wafer (1) to an auxiliary carrier wafer (2), detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4), forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrier wafer (2) a growth surface for subsequent epitaxial growth of a semiconductor layer sequence, epitaxially growing the semiconductor layer sequence (5) on the growth surface, applying a chip substrate wafer to the semiconductor layer sequence, detaching the auxiliary carrier wafer (2), and singulating the composite composed of the semiconductor layer sequence and the chip substrate wafer (7) into mutually separate semiconductor chips.

摘要翻译： 一种制造多个半导体芯片，特别是辐射发射半导体芯片的方法，每个半导体芯片具有至少一个外延生产的功能半导体层堆叠，包括以下方法步骤：制备基本上由半导体材料组成的生长衬底晶片（1） 半导体材料系统，其相对于与功能半导体层堆叠的半导体层序列相同或类似的晶格参数，在生长衬底晶片（1）中形成平行于功能半导体层堆叠的分离区（4） 生长衬底晶片（1）的主面（100），将生长衬底晶片（1）接合到辅助载体晶片（2），沿着分离区（4）分离生长衬底晶片的部分（11） （1），其从所述分离区（4）观察时远离所述辅助载体晶片（2），在所述生长衬垫的所述部分（12）上形成 e晶片保留在辅助载体晶片（2）上，用于随后外延生长半导体层序列，在生长表面上外延生长半导体层序列（5），将芯片衬底晶片应用于半导体层序列，分离 辅助载体晶片（2），将由半导体层序列和芯片基板晶片（7）组成的复合体分离成相互分开的半导体芯片。

公开(公告)号：US20070278508A1

公开(公告)日：2007-12-06

申请号：US10587666

申请日：2005-01-25

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

公开(公告)号：US07164158B2

公开(公告)日：2007-01-16

申请号：US10789199

申请日：2004-02-26

申请人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

发明人： Wilhelm Stein ,  Michael Fehrer ,  Johannes Baur ,  Matthias Winter ,  Andreas Ploessl ,  Stephan Kaiser ,  Berthold Hahn ,  Franz Eberhard

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

摘要翻译： 一种用于光电器件的电接触件，其包括金属或金属合金的镜层（2），用于减少镜层（2）的腐蚀的保护层（3），阻挡层（4） ，耦合层（5）和焊料层（8）。 这种类型的接触的特征在于高反射率，与半导体的良好的欧姆接触，对半导体的良好的粘合性以及形成彼此接触的层的良好粘附性，良好的热稳定性，相对于环境影响的高稳定性， 以及可焊性和图案性。

公开(公告)号：US20060289854A1

公开(公告)日：2006-12-28

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： H01L31/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20060008943A1

公开(公告)日：2006-01-12

申请号：US11174007

申请日：2005-06-30

申请人： Berthold Hahn

发明人： Berthold Hahn

IPC分类号： H01L21/44

CPC分类号： H01L24/31 ,  H01L24/83 ,  H01L24/95 ,  H01L25/50 ,  H01L33/0095 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/838 ,  H01L2224/95102 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0781 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/05644

摘要： To mount semiconductor chips (3), the chips are placed in a liquid (5), and drops (51) of the liquid containing no more than one semiconductor chip are positioned on a substrate (2). On the substrate are molecules of a first type (1), on the semiconductor chips (3) are molecules of a second type (4) which can bond with the molecules of the first type (1). After the liquid (5) dries, the semiconductor chip (3) can be electrically contacted on the substrate (2) by conductive structures (21).

摘要翻译： 为了安装半导体芯片（3），将芯片放置在液体（5）中，并且将含有不超过一个半导体芯片的液体（51）放置在基板（2）上。 在衬底上是第一类型（1）的分子，在半导体芯片（3）上是可与第一类型（1）的分子结合的第二类型的分子（4）。 在液体（5）干燥之后，半导体芯片（3）可以通过导电结构（21）在基板（2）上电接触。

公开(公告)号：US20050127382A1

公开(公告)日：2005-06-16

申请号：US10999854

申请日：2004-11-29

申请人： Stefan Groetsch ,  Stefan Illek ,  Andreas Ploessl ,  Berthold Hahn

发明人： Stefan Groetsch ,  Stefan Illek ,  Andreas Ploessl ,  Berthold Hahn

IPC分类号： H01L23/13 ,  H01L23/15 ,  H01L23/367 ,  H01L23/373 ,  H01L33/00 ,  H01L33/62 ,  H01L33/64 ,  H01S5/02 ,  H01S5/183

CPC分类号： H01L33/641 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/3677 ,  H01L24/97 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L33/647 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/83048 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A carrier layer (1) for a semiconductor layer sequence comprising an electrical insulation layer (2) containing AlN or a ceramic. Furthermore a method for producing semiconductor chips is described.

摘要翻译： 一种用于半导体层序列的载体层（1），包括含有AlN或陶瓷的电绝缘层（2）。 另外，对半导体芯片的制造方法进行说明。

公开(公告)号：US09112127B2

公开(公告)日：2015-08-18

申请号：US14003207

申请日：2012-03-02

申请人： Berthold Hahn ,  Andreas Leber

发明人： Berthold Hahn ,  Andreas Leber

IPC分类号： H01L33/64 ,  H01L33/00 ,  H01L33/42 ,  H01L33/62

CPC分类号： H01L33/64 ,  H01L33/005 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

摘要： A method can be used to provide at least one optoelectronic semiconductor component, A carrier includes a first surface and a second surface opposite the first surface. At least one optoelectronic semiconductor chip is arranged on the first surface of the carrier. The optoelectronic semiconductor chip is formed with at least one n-side region and at least one p-side region, and is applied with the n-side region or the p-side region to the first surface. An electrically insulating enclosure is arranged on exposed points of the outer faces of the semiconductor chip and of the first surface of the carrier. The electrically insulating enclosure is partially removed. After removal at least one major face, remote from the carrier, of the optoelectronic semiconductor chip is free of the electrically insulating enclosure at least in places.

摘要翻译： 一种方法可用于提供至少一个光电子半导体部件。载体包括第一表面和与第一表面相对的第二表面。 至少一个光电半导体芯片布置在载体的第一表面上。 光电半导体芯片形成有至少一个n侧区域和至少一个p侧区域，并且将n侧区域或p侧区域施加到第一表面。 电绝缘外壳设置在半导体芯片的外表面和载体的第一表面的暴露点上。 电绝缘外壳部分拆除。 至少在某些地方，除去光电半导体芯片远离载体的至少一个主要表面没有电绝缘外壳。

公开(公告)号：US08426843B2

公开(公告)日：2013-04-23

申请号：US12680620

申请日：2008-08-28

申请人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

发明人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

IPC分类号： H01L33/30

CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.

摘要翻译： 描述了具有用于产生第一波长（λ1）和再发射层（3）的辐射的有源层（2）的辐射发射半导体本体（1），其包括量子阱结构（4），其包括量子层结构 （5）和阻挡层结构（6）。 再发射层旨在通过吸收势垒层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

公开(公告)号：US20120132945A1

公开(公告)日：2012-05-31

申请号：US13318818

申请日：2010-04-08

申请人： Nikolaus Gmeinwieser ,  Berthold Hahn

发明人： Nikolaus Gmeinwieser ,  Berthold Hahn

IPC分类号： H01L33/50

CPC分类号： H01L33/508 ,  H01L33/06 ,  H01L33/08 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/504

摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence contains at least one active layer for generating primary radiation. In addition, the semiconductor layer sequence includes a plurality of conversion layers, the conversion layers being designed to absorb the primary radiation at least partially and to convert it into secondary radiation of a longer wavelength than the primary radiation. Furthermore the semiconductor layer sequence comprises a roughening which extends at least into the conversion layers.

摘要翻译： 光电半导体芯片包括半导体层序列。 半导体层序列包含至少一个用于产生初级辐射的活性层。 此外，半导体层序列包括多个转换层，转换层被设计成至少部分地吸收主辐射并将其转换成比主辐射更长波长的次级辐射。 此外，半导体层序列包括至少延伸到转换层中的粗糙化。