公开(公告)号：US20050151154A1

公开(公告)日：2005-07-14

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/32 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGaN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在光生成区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US20050121692A1

公开(公告)日：2005-06-09

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n−-Zn1-xMgxSySe1-y layer, a higher doped n+-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.

公开(公告)号：US20050098801A1

公开(公告)日：2005-05-12

申请号：US10980258

申请日：2004-11-04

申请人： Ayako Ikeda ,  Youichi Nagai ,  Takao Nakamura

发明人： Ayako Ikeda ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L27/10

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405

摘要： A semiconductor light emitting device includes: a first conductivity type semiconductor layer made of nitride semiconductor; a second conductivity type semiconductor layer made of nitride semiconductor, the second conductivity type semiconductor layer being provided on the first conductivity type semiconductor layer; an active layer made of nitride semiconductor, the active layer being provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode provided on the second conductivity type semiconductor layer, the second electrode having a predetermined pattern; and a reflecting metal layer provided on the second conductivity type semiconductor layer and the second electrode.

摘要翻译： 一种半导体发光器件包括：由氮化物半导体制成的第一导电型半导体层; 由氮化物半导体制成的第二导电型半导体层，所述第二导电类型半导体层设置在所述第一导电型半导体层上; 由氮化物半导体制成的有源层，所述有源层设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间; 电连接到第一导电类型半导体层的第一电极; 设置在所述第二导电类型半导体层上的第二电极，所述第二电极具有预定图案; 以及设置在所述第二导电类型半导体层和所述第二电极上的反射金属层。

公开(公告)号：US06876003B1

公开(公告)日：2005-04-05

申请号：US09519408

申请日：2000-03-03

申请人： Takao Nakamura ,  Hideki Matsubara

发明人： Takao Nakamura ,  Hideki Matsubara

IPC分类号： H01L33/42 ,  H01L27/15

CPC分类号： H01L33/42 ,  Y10S438/94

摘要： A light-emitting layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation.

摘要翻译： 在基板上设置发光层。 在发光层上设置p型半导体层。 上电极设置在p型半导体层上。 上电极包括与p型半导体层接触的Au薄膜和形成在其上的n型透明导体膜。 n型透明导体膜通过激光烧蚀形成。

公开(公告)号：US06815316B2

公开(公告)日：2004-11-09

申请号：US10318768

申请日：2002-12-13

申请人： Takao Nakamura

发明人： Takao Nakamura

IPC分类号： C23C1600

CPC分类号： H01L33/0083 ,  Y10S438/931

摘要： A system for fabricating a compound semiconductor device includes a gas treatment apparatus that performs a hydrogen chloride gas etching on a compound semiconductor substrate, a radical treatment apparatus that performs a radical hydrotreatment on the substrate, a semiconductor film forming apparatus that forms a compound semiconductor film on the treated substrate, a conductive film forming apparatus that forms a conductive film on the substrate, and an ultrahigh vacuum transfer path that connects together the several apparatuses so that the substrate being processed can be transferred through the transfer path from apparatus to apparatus under a continuously maintained ultrahigh vacuum environment. Some of the apparatuses can overlap or share functions with one another.

公开(公告)号：US06750322B2

公开(公告)日：2004-06-15

申请号：US09891053

申请日：2001-06-25

申请人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

发明人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

IPC分类号： C07K14705

CPC分类号： G01N33/502 ,  C07K14/705 ,  G01N2333/72

摘要： The present invention has provided a human-derived novel G protein-coupled receptor protein expressed in the brain, rat-derived protein corresponding to it, and their genes. Use of the receptors makes it possible to screen their ligands and compounds that are candidates for medicines. These ligands and candidate compounds would be useful in the diagnosis and treatment of diseases arising from disorders of signal transduction pathway mediated by the G protein-coupled receptor of the invention.

摘要翻译： 通过筛选人海马文库来分离编码人衍生的G蛋白偶联受体蛋白质的全长cDNA。 此外，分离与人源cDNA相对应的来自大鼠的cDNA。 由这些cDNA编码的蛋白质具有降低组胺刺激下细胞内cAMP浓度的活性。 这些蛋白质可用作筛选其配体或筛选能够调节来自上述蛋白质的信号转导的药物的候选化合物的工具。

公开(公告)号：US06724018B2

公开(公告)日：2004-04-20

申请号：US10228289

申请日：2002-08-27

申请人： Koshi Ando ,  Takao Nakamura

发明人： Koshi Ando ,  Takao Nakamura

IPC分类号： H01L310328

CPC分类号： B82Y20/00 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1832

摘要： A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

摘要翻译： 蓝紫色近紫外灯管光电二极管，暗电流小，可靠性高，使用寿命长。 针式光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层，p -Zn1-xMgxSySe1-y层，p-（ZnTe / ZnSe）SLE，p-ZnTe接触层，任选提供的抗反射膜和金属p电极。蓝紫色近紫外线雪崩光电二极管 具有小暗电流，高可靠性和长寿命。 雪崩光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层， Zn1-xMgxSySe1-y层，p-（ZnTe / ZnSe）SLE，p-ZnTe接触层，任选提供的抗反射膜和金属p电极。 层状结构的上侧被蚀刻成台面形状并涂覆有绝缘膜。

公开(公告)号：US06624443B2

公开(公告)日：2003-09-23

申请号：US10066702

申请日：2002-02-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： H01L2701

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

公开(公告)号：US06172008B2

公开(公告)日：2001-01-09

申请号：US08411509

申请日：1995-03-28

申请人： Takao Nakamura

发明人： Takao Nakamura

IPC分类号： H01L3924

CPC分类号： C23C14/08 ,  C23C14/22 ,  Y10S505/731

摘要： A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources, an oxidizing gas is locally supplied to the vicinity of the substrate and a growing thin film is illuminated by ultraviolet.

摘要翻译： 一种制备在衬底上具有结晶，清洁和光滑表面的氧化物薄膜的方法。 该方法通过使用包括真空室的装置进行，其中可以在基板附近供应包括O 3的O 2的氧化气体，使得可以在保持靠近蒸发源的高真空的同时增加基板周围的压力，并布置Knudsen电池蒸发源 在基板被加热的真空室中，除了氧气以外的氧化物的构成原子的分子束从K电池蒸发源供给，局部地将氧化气体供给到衬底附近，并且通过紫外线照射生长的薄膜 。

公开(公告)号：US5898264A

公开(公告)日：1999-04-27

申请号：US916961

申请日：1997-08-25

申请人： Hisashi Nose ,  Takao Nakamura ,  Hidehiro Koumura

发明人： Hisashi Nose ,  Takao Nakamura ,  Hidehiro Koumura

IPC分类号： H01J29/90 ,  H01J29/86 ,  H01J29/92 ,  H01J31/00 ,  H01R13/46

CPC分类号： H01J29/92 ,  H01J29/861

摘要： A cathode ray tube includes a vacuum envelope formed of a panel portion having a phosphor screen on its inner surface and suspending a shadow mask therein, a neck portion having a stem sealed to one end thereof and a funnel portion for connecting the other end of the neck portion and the panel-portion. The stem has a plurality of stem pins annularly arrayed, sealed thereto and extending therethrough for supporting an electron gun in the neck portion. A stem mound is raised and formed integrally with the stem around a base of each of stem pins on a electron-gun-supporting side thereof. A first distance R1 is defined as a distance from a center axis of the neck portion to an inner wall in a region of the neck portion facing a major portion of the electron gun, a second distance R2 is defined as a distance from the center axis to an outside edge of the stem mound, measured at half an axial height of said stem mound, and a third distance is defined as a distance from an inner wall to the center axis. The third distance is not smaller than the first distance R1 at least in a region of the neck portion facing the stem mounds except in the vicinity of fused and sealed regions of the neck portion and the stem, and the first R1 distance and the second distance R2 satisfy a relationship, 0

摘要翻译： 阴极射线管包括由其内表面上具有荧光屏的面板部分形成并在其中悬挂荫罩的真空外壳，颈部具有密封到其一端的杆，以及漏斗部分，用于将 颈部和面板部分。 杆具有环形排列的多个杆销，密封到其上并延伸穿过其中，用于在颈部部分中支撑电子枪。 在其电子枪支撑侧的每个茎销的基部周围，茎部隆起并形成为一体。 第一距离R1被定义为在颈部的面对电子枪的主要部分的区域中从颈部的中心轴线到内壁的距离，第二距离R2被定义为距离中心轴线的距离 到所述茎丘的半个轴向高度处测量的茎丘的外边缘，并且第三距离被定义为从内壁到中心轴线的距离。 至少在颈部部分面向茎墩的区域中，第三距离不小于第一距离R1，除了在颈部和杆部的熔融和密封区域附近，并且第一R1距离和第二距离 R2满足关系，0