公开(公告)号：US07745921B2

公开(公告)日：2010-06-29

申请号：US12264970

申请日：2008-11-05

申请人： Kazuhiko Hiranuma ,  Hiroshi Kuroda ,  Yoshiyuki Abe

发明人： Kazuhiko Hiranuma ,  Hiroshi Kuroda ,  Yoshiyuki Abe

IPC分类号： H01L23/02

CPC分类号： H01L27/14618 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/14634 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.

摘要翻译： 半导体器件包括不同于耐电压或抗噪声的诸如多芯片模块的半导体芯片。 半导体器件包括安装在封装衬底上的第一和第二半导体芯片，该封装衬底具有沿边缘布置的焊盘。 第一半导体芯片包括用于模拟信号的接合焊盘，第二半导体芯片包括用于高电压信号的焊盘。 布置用于模拟信号的接合焊盘的边缘以及布置有用于高电压信号的接合焊盘的边缘沿着封装衬底的相互不同的边缘设置。 可以容易地避免用于高电压信号的电极或布线与封装基板上的模拟信号的连接，从而可以抑制SI劣化。

公开(公告)号：US07737001B2

公开(公告)日：2010-06-15

申请号：US11444507

申请日：2006-06-01

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/544 ,  H01L23/562 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5442 ,  H01L2223/5446 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a stealth dicing process for a semiconductor device with a low dielectric constant layer, the occurrence of poor appearance such as a defective shape or discoloration in the layer is reduced or prevented as follows. A low dielectric constant layer is formed in an interlayer insulating layer formed on the main surface of a semiconductor wafer. A laser beam is focused on the inside of the wafer from the reverse side of the wafer in order to form modified regions selectively. Each modified region is formed in a way to contact, or partially get into, the low dielectric constant layer. In this formation process, the semiconductor wafer is cooled by a cooling element. This reduces or prevents discoloration of the low dielectric constant layer which might occur due to the heat of a laser beam.

摘要翻译： 在具有低介电常数层的半导体器件的隐形切割工艺中，如下所述地降低或防止了诸如形状不良或变色的差的外观的发生。 在形成在半导体晶片的主表面上的层间绝缘层中形成低介电常数层。 激光束从晶片的背面聚焦在晶片的内部，以选择性地形成改质区域。 每个改性区域以与低介电常数层接触或部分进入的方式形成。 在该形成过程中，半导体晶片被冷却元件冷却。 这可以减少或防止由于激光束的热量而可能发生的低介电常数层的变色。

公开(公告)号：US20100133757A1

公开(公告)日：2010-06-03

申请号：US12595030

申请日：2008-04-09

申请人： Toshiyuki Maeda ,  Yoshiyuki Abe

发明人： Toshiyuki Maeda ,  Yoshiyuki Abe

IPC分类号： F16J9/20

CPC分类号： F16J15/3208 ,  F16J15/324 ,  F16J15/3244

摘要： A sealing device in which a good lubricating oil film is formed along the entire circumference of a sliding surface. The sealing device (1) is fitted in an annular groove formed in either of two elements that are a housing having a shaft hole and a shaft inserted through the shaft hole, and the sealing device (1) seals an annular gap between the two elements. The sealing device (1) has a seal ring (2) sliding against the other element by relative axial movements of the two elements. In the seal ring (2), on each of axially opposite ends of a sliding surface (20) sliding against the other element, there are formed grooves (22) extending from an end surface (21) of the seal ring (2) toward the axial center of a sliding surface (20). Further, in the seal ring (2), the boundary between each groove (22) and the sliding surface (20) is formed only by lines inclined relative to the direction of sliding of the sliding surface (20), and grooves (23) are circumferentially adjacently arranged in the seal ring (2) so that regions each having the boundary formed by the inclined lines are continuous along the entire circumference of the sliding surface (20).

摘要翻译： 一种密封装置，其中沿着滑动表面的整个圆周形成良好的润滑油膜。 密封装置（1）装配在形成为两个元件中的任一个的环形槽中，所述两个元件是具有轴孔的壳体，并且轴穿过轴孔，并且密封装置（1）密封两个元件之间的环形间隙 。 密封装置（1）具有通过两个元件的相对轴向运动而相对于另一元件滑动的密封环（2）。 在密封环（2）中，在与另一个元件滑动的滑动表面（20）的每个轴向相对端上形成有从密封环（2）的端表面（21）延伸朝向 滑动表面（20）的轴向中心。 此外，在密封环（2）中，每个凹槽（22）和滑动表面（20）之间的边界仅由相对于滑动表面（20）的滑动方向倾斜的线形成，并且凹槽（23） 周向地布置在密封环（2）中，使得具有由倾斜线形成的边界的区域沿着滑动表面（20）的整个圆周是连续的。

公开(公告)号：US20100129660A1

公开(公告)日：2010-05-27

申请号：US12452063

申请日：2008-07-02

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： H01B1/08 ,  C23C14/34 ,  B32B17/06 ,  B32B27/06

CPC分类号： C23C14/3414 ,  C03C17/245 ,  C04B35/01 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3407 ,  H01B1/08 ,  Y10T428/24355 ,  Y10T428/268 ,  Y10T428/30 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935

摘要： A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same.It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

摘要翻译： 用于溅射的靶或用于离子镀的片，其能够获得高速成膜和无结节，适于获得其的氧化物烧结体及其制造方法，以及具有低吸收率的透明导电膜 蓝光和低比电阻，通过使用它们获得。 由具有铟和镓作为氧化物的氧化物烧结体提供，其特征在于具有双晶型结构的In 2 O 3相形成主晶相，并且具有Ga 2 O 3型结构的GaInO 3相或GaInO 3 相和（Ga，In）2 O 3相精细分散在其中，作为平均粒径等于或小于5μm的晶粒，并且镓的含量等于或高于10原子％以下 35原子数为原子数比Ga /（In + Ga）等。

公开(公告)号：US20100088435A1

公开(公告)日：2010-04-08

申请号：US12585423

申请日：2009-09-15

申请人： Yoshiyuki Abe

发明人： Yoshiyuki Abe

IPC分类号： G06F13/00

CPC分类号： G06F13/385 ,  Y02D10/14 ,  Y02D10/151

摘要： A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption.

摘要翻译： 串行数据传送装置包括执行传输层的处理的传输控制器，执行链路层的处理的链路控制器以及执行物理层的处理的物理层电路。 串行数据传送装置经由串行总线与目的地装置进行数据的发送接收。 链路控制器将从目的地设备接收到的空闲数据输出到物理层电路，并且在将空闲数据输出到物理层电路的同时停止负责产生数据的单元的传送到目标设备。 这使得能够在串行数据传送装置的空闲周期中输出在标准中定义的空闲数据，并且还降低功耗。

公开(公告)号：US20090121337A1

公开(公告)日：2009-05-14

申请号：US12092850

申请日：2006-11-09

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

IPC分类号： H01L21/304 ,  H01L25/00

CPC分类号： H01L22/32 ,  B23K26/0006 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L22/12 ,  H01L22/34 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/065 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/5448 ,  H01L2224/02235 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

摘要翻译： 为了通过隐形切割来划分半导体晶片，切割区域中的测试焊盘和对准靶沿着切割区域的宽度方向的一侧共同配置，并且用于形成改质区域的激光束照射到远离的位置 从测试平面和对准目标Am。 以这种方式，可以减少或防止使用隐形切割的半导体晶片的切割过程中的切割形状的缺陷。

公开(公告)号：US07476343B2

公开(公告)日：2009-01-13

申请号：US11624309

申请日：2007-01-18

申请人： Tokuyuki Nakayama ,  Yoshiyuki Abe

发明人： Tokuyuki Nakayama ,  Yoshiyuki Abe

IPC分类号： H01B1/08

CPC分类号： H01B1/12 ,  C04B35/01 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/80

摘要： A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/β-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

摘要翻译： 用于透明导电膜制造的烧结体靶主要由Ga，In和O组成; Ga含量范围从49.1英尺。 至65岁。 相对于所有金属原子的％; 主要由β-GaInO 3相和In 2 O 3相构成; 提供45％以下的In2O3相（400）/β-GaInO3相（111）X射线衍射峰强度比; 并且具有5.8g / cm 3以上的密度。 通过使用溅射技术获得的透明导电膜是主要由Ga，In和O组成的非晶氧化物透明导电膜，使得Ga含量范围为49.1at。 至65岁。 相对于所有金属原子，功函数为5.1eV以上，波长633nm的光的折射率为1.65〜1.85。

公开(公告)号：US07418173B2

公开(公告)日：2008-08-26

申请号：US11628945

申请日：2005-06-29

申请人： Yoshiyuki Abe ,  Hiroshi Mori ,  Akira Terashima

发明人： Yoshiyuki Abe ,  Hiroshi Mori ,  Akira Terashima

IPC分类号： G02B6/42

CPC分类号： G02F1/0147 ,  G02F1/225 ,  G02F2201/12

摘要： A waveguide type optical control element which has an optical waveguide made of an insulating material having an electro-optic effect or a thermo-optic effect, and a control electrode provided in contact with or proximity to the optical waveguide; the optical waveguide having a propagation loss which is 1 dB/cm or less at wavelengths of from 1.3 μm to 1.6 μm. The control electrode is constituted of a conductive oxide film having a carrier electron concentration of 5.5×1020/cm3 or less and a resistivity of 9.5×10−4 Ωcm or less, and the conductive oxide film has a coefficient of extinction of light waves, of 0.240 or less at a wavelength of 1.55 μm.

摘要翻译： 一种波导型光控制元件，其具有由具有电光效应或热光效应的绝缘材料制成的光波导以及设置为与光波导接触或接近的控制电极; 光波导在波长1.3μm至1.6μm处具有1dB / cm以下的传播损耗。 控制电极由载流子电子浓度为5.5×10 20 / cm 3以下且电阻率为9.5×10 -4的导电氧化物膜构成， 以下，导电氧化物膜的波长为1.55μm的光波的消光系数为0.240以下。

公开(公告)号：US07371475B2

公开(公告)日：2008-05-13

申请号：US10445708

申请日：2003-05-27

申请人： Yoshiyuki Abe

发明人： Yoshiyuki Abe

IPC分类号： B32B33/00 ,  H01B1/08

CPC分类号： C23C14/086 ,  C23C14/3414 ,  Y10S428/917 ,  Y10S428/918 ,  Y10T428/12771 ,  Y10T428/12826

摘要： The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10−4 Ω·cm or less, and whose surface smoothness and specific resistance properties do not change even when heated at 170° C. is provided.

摘要翻译： 以铟氧化物为主要成分并含有钨和/或钼的透明导电性薄膜的目标物，通过形成氧化铟粉体，氧化钨粉末和/或氧化钼粉末，然后加热或烧结所形成的 使得溅射后的薄膜具有氧化铟作为主要成分，并且含有原子比（W + Mo）/ In为0.0040〜0.0470的钨和/或钼，由此具有优异的表面平滑度和低的透明导电薄膜 提供6.0×10 -4Ω·cm以下的电阻率，并且即使在170℃下加热时，其表面平滑度和电阻率特性也不变化。

公开(公告)号：US20080000388A1

公开(公告)日：2008-01-03

申请号：US11665942

申请日：2004-10-22

申请人： Yoshiyuki Abe

发明人： Yoshiyuki Abe

IPC分类号： C23C14/08

CPC分类号： H01L51/0097 ,  C23C14/0676 ,  C23C14/086 ,  G02F1/133305 ,  H01L51/5253 ,  Y02E10/549 ,  Y02P70/521

摘要： The object of this invention is to provide a transparent plastic substrate having better surface smoothness than prior substrates, as well as having high transparency and high gas-barrier characteristics, and to provide a flexible display element using that uses this substrate. For that purpose, a gas-barrier transparent plastic substrate is obtained such that a transparent oxide film comprising either of a tin-oxide amorphous film, or tin-oxide amorphous film containing at least one added element that is selected from among the group of silicon, germanium, aluminum, cerium and indium, at a ratio of 0.2 to 45 atomic % with respect to the total of added element and tin, is formed as gas-barrier layer on at least one surface of a plastic film base material. It is possible that the gas-barrier transparent plastic substrate be formed as bilayer where a silicon-oxide film or silicon-oxynitride film is formed on the transparent oxide film. When a transparent electrode film is further formed on it, a flexible display element can be obtained.

摘要翻译： 本发明的目的是提供一种透明塑料基材，其具有比现有基材更好的表面平滑性，以及具有高透明度和高气体阻隔特性，并提供使用该基材的柔性显示元件。 为此目的，获得阻气透明塑料基板，使得透明氧化物膜包括含有至少一种添加元素的锡氧化物非晶膜或锡氧化物非晶膜，所述添加元素选自硅 相对于添加的元素和锡的总量，以比例为0.2〜45原子％的锗，铝，铈和铟在塑料膜基材的至少一个表面上形成阻气层。 阻气透明塑料基板可以形成为在透明氧化膜上形成氧化硅膜或氧氮化硅膜的双层。 当在其上进一步形成透明电极膜时，可以获得柔性的显示元件。