Memory system topologies including a buffer device and an integrated circuit memory device

    公开(公告)号:US10535398B2

    公开(公告)日:2020-01-14

    申请号:US16214986

    申请日:2018-12-10

    Applicant: Rambus Inc.

    Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

    HIGH PERFORMANCE, NON-VOLATILE MEMORY MODULE
    72.
    发明申请

    公开(公告)号:US20190115059A1

    公开(公告)日:2019-04-18

    申请号:US15555470

    申请日:2016-03-11

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a memory controller via a bus. The module includes at least two non-volatile memory devices, and a buffer disposed between the pin interface and the at least two non-volatile memory devices. The buffer receives non-volatile memory access commands from the memory controller that are interleaved with DRAM memory module access commands.

    Memory repair method and apparatus based on error code tracking
    79.
    发明授权
    Memory repair method and apparatus based on error code tracking 有权
    基于错误代码跟踪的内存修复方法和设备

    公开(公告)号:US09430324B2

    公开(公告)日:2016-08-30

    申请号:US14285481

    申请日:2014-05-22

    Applicant: Rambus Inc.

    Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

    Abstract translation: 公开了一种存储器模块,其包括衬底,输出读取数据的存储器件和缓冲器。 缓冲器具有用于将读取的数据传送到存储器控制器的主界面和耦合到存储器设备的辅助接口以接收读取的数据。 缓冲器包括用于识别所接收的读取数据中的错误并识别与该错误相关联的存储器件中的存储单元位置的错误逻辑。 修复逻辑将替换存储元素映射为与错误相关联的存储单元位置的替代存储元素。

Patent Agency Ranking