公开(公告)号：US20240213005A1

公开(公告)日：2024-06-27

申请号：US18146253

申请日：2022-12-23

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Barton Lane ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01P7/06

CPC classification number: H01J37/3299 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32165 ,  H01P7/06 ,  H01J37/32743 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/334

Abstract: An apparatus for plasma processing includes an RF power source and a set of resonating structures coupled to the RF power source. The resonating structures include a first region and a second region adjacent to the second region. The first region includes a first antenna and a first coupling circuit, the first coupling circuit being outside a coupling of the RF power source to the first region, where the first coupling circuit is configured to adjust a power distribution of the first region. The second region includes a second antenna.

公开(公告)号：US20220367149A1

公开(公告)日：2022-11-17

申请号：US17318116

申请日：2021-05-12

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Peter Ventzek ,  Alok Ranjan

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: Various embodiments of systems and methods are described herein for controlling a pulsed plasma. Pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) of the plasma generation source may be controlled based on the measurement data received from measurement device(s), to control the plasma exposure of the substrate during a sequence of dynamically controlled pulses within the plasma process chamber. In addition or alternatively, pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) can be applied to the source power, bias power, and/or both based on the measurement data received from measurement device(s), to control a plasma exposure of the substrate. The pulse timing changes may be made in a feedforward or feedback manner.

公开(公告)号：US11410832B2

公开(公告)日：2022-08-09

申请号：US16913548

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Yohei Yamazawa ,  Chelsea Dubose ,  Barton Lane

IPC: H01J37/32 ,  H01J37/244

Abstract: In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.

公开(公告)号：US11050394B2

公开(公告)日：2021-06-29

申请号：US16441517

申请日：2019-06-14

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Merritt Funk ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H03F1/00 ,  H03F3/24 ,  H05K7/20 ,  H03F1/30

Abstract: Embodiments are described for modules, multi-stage systems, and related methods for radio frequency (RF) power amplifiers with reduced size and weight requirements. Fluid cooling is incorporated directly into the power amplifier (PA) module design rather than requiring PA modules to be mounted on separate cooling devices. For one embodiment, a PA module includes a circuit board, RF circuit components, a ground plane, and a cooling plate having one or more cooling channels to receive a cooling fluid. The cooling channels are positioned to dissipate heat from the RF circuit components through the ground plane. For a further embodiment, the PA module also includes RF bias and power electronics within a housing for the PA module without requiring an external control board or power conversion electronics. Also disclosed are multi-stage PA systems having a plurality of PA modules that are similarly cooled using cooling channels.

公开(公告)号：US10424462B2

公开(公告)日：2019-09-24

申请号：US14534870

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  John Entralgo ,  Jianping Zhao ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500 W to 3500 W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

公开(公告)号：US10354841B2

公开(公告)日：2019-07-16

申请号：US15093031

申请日：2016-04-07

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Barton G. Lane ,  Merritt Funk ,  Radha Sundararajan

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

公开(公告)号：US09881804B2

公开(公告)日：2018-01-30

申请号：US15006739

申请日：2016-01-26

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk

IPC: H01L21/302 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01J37/32733

Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma chamber that may generate plasma to remove monolayer(s) of the substrate. The plasma process may include a two-step process that uses a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transitions to a second plasma or moves the substrate to a different location within the first plasma that has a higher ion energy. In one specific embodiment, the transition between the first and second plasma may be enabled by changing the position of the substrate relative to the source electrode with no or relatively small changes in plasma process conditions.

公开(公告)号：US09852893B2

公开(公告)日：2017-12-26

申请号：US15088834

申请日：2016-04-01

Applicant: Tokyo Electron Limited ,  University of Houston System

Inventor： Lee Chen ,  Demetre J. Economou ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3222 ,  H01J37/32293

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

公开(公告)号：US09668332B2

公开(公告)日：2017-05-30

申请号：US15069385

申请日：2016-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H05H3/02

CPC classification number: H05H3/02

Abstract: Embodiments include a chemical processing apparatus and method of using the chemical processing apparatus to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process which is comprised of a substantially anisotropic beam of neutral particles. The chemical processing apparatus comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing apparatus comprises an ungrounded dielectric (insulator) neutralizer grid configured to expose a substrate in the second plasma chamber to the substantially anisotropic beam of neutral particles traveling from the neutralizer grid.

公开(公告)号：US20160293388A1

公开(公告)日：2016-10-06

申请号：US15089011

申请日：2016-04-01

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Colin Campbell ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32807

Abstract: A plasma processing system for performing a plasma processing application includes a plasma processing chamber, first and second electrodes residing in the plasma processing chamber, and a pneumatic counterbalance system operatively connected to the first electrode. The pneumatic counterbalance system is configured to support and maintain a position of the first electrode during a plasma processing application for gap control. A drive assembly separate from the pneumatic counterbalance system is configured to move the first electrode with respect to the second electrode in the plasma processing chamber for gap adjustment.

Abstract translation: 用于执行等离子体处理应用的等离子体处理系统包括等离子体处理室，位于等离子体处理室中的第一和第二电极以及可操作地连接到第一电极的气动平衡系统。 气动平衡系统构造成在用于间隙控制的等离子体处理应用期间支撑并保持第一电极的位置。 与气动平衡系统分离的驱动组件被配置为相对于等离子体处理室中的第二电极移动第一电极，用于间隙调节。