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    Integrated capacitively-coupled bias circuit for RF MEMS switches
    75.
    发明授权
    Integrated capacitively-coupled bias circuit for RF MEMS switches 有权
    用于RF MEMS开关的集成电容耦合偏置电路

    公开(公告)号：US09269497B2

    公开(公告)日：2016-02-23

    申请号：US14292598

    申请日：2014-05-30

    Applicant: Raytheon Company

    Inventor： Francis J. Morris

    IPC: H01G5/16 ,  H01H59/00 ,  H01L29/92 ,  H01L49/02 ,  H01L29/66

    CPC classification number: H01G5/16 ,  B81B2201/01 ,  B81B2201/0221 ,  H01G5/18 ,  H01H59/0009 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/92

    Abstract: A switchable capacitor including a first electrode, a dielectric layer on the first electrode, a second electrode configured to be suspended in an undeflected position over the dielectric layer in a de-activated state, and to deflect toward the first electrode in an activated state in response to a voltage difference between the two electrodes, a gap between the second electrode and the dielectric layer in the activated state being less than a corresponding gap in the de-activated state, and a capacitor having a first and second end, coupled to one of the electrodes at the first end, and configured to reduce the voltage difference between the electrodes as the second electrode deflects toward the first electrode in the activated state, wherein the voltage difference between the electrodes corresponds to a bias voltage applied across the second end of the capacitor and an other one of the first and second electrodes.

    Abstract translation: 一种可切换电容器，包括第一电极，第一电极上的电介质层，第二电极，被配置为悬浮在处于去激活状态的电介质层上的未偏转位置，并且以激活状态朝向第一电极偏转 响应于两个电极之间的电压差，在激活状态下第二电极和电介质层之间的间隙小于去激活状态下的对应间隙，以及具有第一和第二端耦合到一个的电容器 并且被配置为当激活状态下第二电极朝着第一电极偏转时，减小电极之间的电压差，其中电极之间的电压差对应于跨过第二端施加的偏置电压 电容器和第一和第二电极中的另一个。

    APPARATUS FOR WIRELESSLY CHARGING A RECHARGEABLE BATTERY
    76.
    发明申请
    APPARATUS FOR WIRELESSLY CHARGING A RECHARGEABLE BATTERY 有权
    无线充电装置可充电电池

    公开(公告)号：US20150180251A1

    公开(公告)日：2015-06-25

    申请号：US14134202

    申请日：2013-12-19

    Applicant: Cambridge Silicon Radio Limited

    Inventor： Vlad Lenive ,  Paul Morris

    IPC: H02J7/00 ,  B81B7/00 ,  H02J7/02

    CPC classification number: H02J7/0042 ,  B81B7/008 ,  B81B2201/01 ,  H02J7/0052 ,  H02J7/025 ,  H02J17/00 ,  H02J50/12

    Abstract: The present application relates to apparatus for wirelessly charging a rechargeable battery, the apparatus comprising: a charging resonator assembly for converting energy from a magnetic field external to the apparatus into an electric current; and a charging circuit for charging the battery using the electric current, wherein the charging resonator assembly includes a plurality of microelectromechanical system (MEMS) switches which, when open, divide the charging resonator into a plurality of electrically unconnected resonator portions, and which, when closed, connect the plurality of resonator portions to form a continuous resonator.

    Abstract translation: 本申请涉及一种用于无线充电可再充电电池的装置，该装置包括：充电谐振器组件，用于将来自设备外部的磁场的能量转换为电流; 以及充电电路，用于使用所述电流对所述电池充电，其中所述充电谐振器组件包括多个微机电系统（MEMS）开关，所述多个微机电系统（MEMS）开关在打开时将所述充电谐振器分成多个电未连接的谐振器部分， 闭合，连接多个谐振器部分以形成连续谐振器。

    JUNCTIONLESS NANO-ELECTRO-MECHANICAL RESONANT TRANSISTOR
    77.
    发明申请
    JUNCTIONLESS NANO-ELECTRO-MECHANICAL RESONANT TRANSISTOR 有权
    无连接的纳米电子机械谐振晶体管

    公开(公告)号：US20150137068A1

    公开(公告)日：2015-05-21

    申请号：US14395626

    申请日：2013-04-19

    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

    Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

    IPC: H03H9/24 ,  B81B3/00

    CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

    Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

    Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

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