公开(公告)号：US09023738B2

公开(公告)日：2015-05-05

申请号：US14458319

申请日：2014-08-13

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Tatsuya Tamura ,  Takeshi Kumagai

IPC: H01L21/00 ,  C23C16/455 ,  H01L21/30 ,  H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  H01L21/762 ,  C23C14/00

CPC classification number: C23C16/45536 ,  C23C14/00 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45529 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/30 ,  H01L21/76224

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract translation: 一种成膜方法，其中在具有凹面的基板上形成有倾向于吸附在羟基上的第一反应气体的反应产物的膜和能够与第一反应气体反应的第二反应气体的膜 包括在基板的凹部中控制深度方向的羟基的吸附分布的工序; 将第一反应气体供给到其上吸附羟基的基材上的步骤; 以及在吸附有第一反应气体的基板上供给第二反应气体的工序。

公开(公告)号：US20150104574A1

公开(公告)日：2015-04-16

申请号：US14514296

申请日：2014-10-14

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang ,  Jeong Ah Yoon

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/18

CPC classification number: C23C16/45534 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45553

Abstract: Embodiments relate to an atomic layer deposition (ALD) process that uses a seed precursor for increased deposition rate. A first reactant precursor (e.g., H2O) may be formed as a result of reaction. The first reactant precursor may react with or substitute source precursor (e.g., 3DMAS) in a subsequent process to deposit material on a substrate. In addition, a second reactant precursor (e.g., radicals) may be separately injected onto the substrate previously injected with the source precursor. By causing the source precursor to react with the first reactant precursor from the surface of the substrate and also react with the second reactant provided by the injector, the material is deposited on the substrate in an expedient manner.

Abstract translation: 实施方案涉及使用种子前体提高沉积速率的原子层沉积（ALD）工艺。 作为反应的结果可以形成第一反应物前体（例如H 2 O）。 第一反应物前体可以在随后的过程中与源前体（例如，3DMAS）反应或在基底上沉积材料。 此外，第二反应物前体（例如自由基）可以分别注入预先注入源前体的基底上。 通过使源前体从衬底的表面与第一反应物前体反应并且还与由注射器提供的第二反应物反应，材料以合适的方式沉积在衬底上。

公开(公告)号：US20150087160A1

公开(公告)日：2015-03-26

申请号：US14489217

申请日：2014-09-17

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Kazuyuki TOYODA ,  Tetsuaki INADA

IPC: H01L21/285 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45561 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/509 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: A substrate processing apparatus includes: a processing gas supply pipe configured to supply a processing gas into a processing chamber; a substrate mounting table that is installed in the processing chamber and on which a substrate to be processed is mounted; a driving unit configured to drive the substrate mounting table to move the substrate mounted on the substrate mounting table; a first plasma generating unit configured to generate plasma of the processing gas supplied into the processing chamber with a first density; and a second plasma generating unit that is installed adjacent to the first plasma generating unit in a traveling direction of the substrate and configured to generate plasma of the processing gas supplied into the processing chamber with a second density lower than the first density.

Abstract translation: 一种基板处理装置，包括：处理气体供给管，其构造成将处理气体供给到处理室中; 安装在处理室中并安装有待处理的基板的基板安装台; 驱动单元，被配置为驱动所述基板安装台以移动安装在所述基板安装台上的所述基板; 第一等离子体产生单元，被配置为以第一密度产生供应到处理室中的处理气体的等离子体; 以及第二等离子体产生单元，其在所述基板的行进方向上与所述第一等离子体生成单元相邻地安装，并且被配置为产生以比所述第一密度低的第二密度供给到所述处理室的所述处理气体的等离子体。

公开(公告)号：US20150086729A1

公开(公告)日：2015-03-26

申请号：US14390620

申请日：2013-04-02

Applicant: SoLayTec B.V.

Inventor： Roger Mathias Wilhelm Görtzen ,  Sebastiaan Antonius Fransiskus Dielissen ,  Joseph Adrianus Maria De Swart ,  Adrianus Johannes Petrus Maria Vermeer

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/45529 ,  C23C16/345 ,  C23C16/403 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/45551 ,  C23C16/45595 ,  C23C16/4583 ,  C23C16/545 ,  H01L21/67784

Abstract: A stacked substrate is produced using an apparatus including an injector head device. Production includes the steps of providing an injector head device comprising a gas bearing pressure arrangement and injecting bearing gas against opposite substrate surfaces, to balance the substrate without support in a conveying plane in the injector head device. The following steps are performed iteratively: contacting opposite substrate surfaces with a first precursor gas; and with a second precursor gas, first and second precursor gases supplied in first and second deposition spaces are arranged opposite and facing respective sides of the substrate; establishing relative motion between the deposition space and the substrate in the conveying plane; and providing at least one of a reactant gas, plasma, laser-generated radiation, and/or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface.

Abstract translation: 使用包括注射器头装置的装置制造堆叠的基板。 生产包括提供包括气体承载压力装置并且将轴承气体注入相对的基板表面的注射器头装置的步骤，以在喷射头装置中的输送平面中平衡基板而不需要支撑。 迭代地执行以下步骤：将相对的基板表面与第一前体气体接触; 并且在第二前体气体中，在第一和第二沉积空间中供应的第一和第二前体气体被布置成与衬底的相对侧相对; 在输送平面中建立沉积空间和基底之间的相对运动; 以及在任何或两个反应物空间中提供反应物气体，等离子体，激光产生的辐射和/或紫外线辐射中的至少一种，用于使沉积之后的任何第一和第二前体气体在至少部分基底表面上反应。

公开(公告)号：US20150083043A1

公开(公告)日：2015-03-26

申请号：US14556608

申请日：2014-12-01

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Yasuhiro SASAKI ,  Mitsuru Kano

IPC: B05B13/02 ,  B65H20/02

CPC classification number: B05B13/0221 ,  B65H20/02 ,  B65H2301/51145 ,  C23C14/562 ,  C23C16/45551 ,  C23C16/545

Abstract: A rolled film formation apparatus including a first chamber in which a first precursor is applied to a substrate, a second chamber in which a second precursor is applied to the substrate such that the first and second precursors react with each other and that an atomic layer is deposited on the substrate, a third chamber in which a purge gas is applied to the substrate, and conveyance roller pairs which are positioned in the first, second and third chambers, and convey the substrate. Each conveyance roller pair includes a first roller and a second roller which sandwich the substrate in a thickness direction of the substrate. At least one of the first and second rollers has an outer peripheral surface having a surface unevenness. The substrate is moved back and forth among the first, second and third chambers. The atomic layer is deposited more than once on the substrate.

Abstract translation: 一种轧制成膜装置，包括：第一室，其中将第一前体施加到基板;第二室，其中将第二前体施加到所述基板，使得所述第一和第二前体彼此反应，并且原子层为 沉积在基板上的第三室，其中向基板施加吹扫气体，以及传送辊对，其定位在第一，第二和第三室中并传送基板。 每个输送辊对包括在基板的厚度方向夹着基板的第一辊和第二辊。 第一和第二辊中的至少一个具有表面凹凸的外周面。 基板在第一，第二和第三室之间来回移动。 原子层在衬底上沉积不止一次。

公开(公告)号：US08980371B2

公开(公告)日：2015-03-17

申请号：US14088727

申请日：2013-11-25

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Ikegawa ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Yu Sasaki ,  Jun Ogawa

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45551

Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Abstract translation: 一种膜沉积方法包括：在从分离气体供应部分供应分离气体和从第一气体供应部分提供第一反应气体的同时旋转第一角度的旋转台; 从第二气体供给部供给第二反应气体，并在从分离气体供给部供给分离气体和从第一气体供给部供给第一反应气体的同时使旋转台旋转第二角度; 同时从第一气体供给部分供给来自分离气体供给部分和第一反应气体的分离气体，使旋转台旋转第三角度; 从第二气体供给部供给第三反应气体，并在供给分离气体和第一反应气体的同时旋转第四角度的旋转台。

公开(公告)号：US20150050815A1

公开(公告)日：2015-02-19

申请号：US14387978

申请日：2013-03-13

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Yoshihiko Yanagisawa ,  Tetsuaki Inada

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/455 ,  H01L21/02 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/455 ,  C23C16/45551 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/0228

Abstract: Provided is a semiconductor device manufacturing method which has: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Abstract translation: 本发明提供一种半导体器件的制造方法，其具有以下步骤：将处理用处理基板配置在设置在具有多个气体供给区域的处理室内的基板安装部件上; 成膜步骤，其中处理气体被供应到处理室，并且处理基板; 从所述处理室进行所述基板的工序; 以及清洁步骤，其中在其中基板未被放置在处理室中的状态下分别控制气体供应区域中的清洁气体量的同时控制清洁气体的密度。

公开(公告)号：US08956456B2

公开(公告)日：2015-02-17

申请号：US13387414

申请日：2010-07-30

Applicant: Adrianus Johannes Petrus Maria Vermeer ,  Gabi P. Janssen

Inventor： Adrianus Johannes Petrus Maria Vermeer ,  Gabi P. Janssen

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54

CPC classification number: C23C16/45551 ,  C23C16/45595 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/54 ,  C23C16/56 ,  F16C29/025 ,  F16C32/0622

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.

Abstract translation: 用于原子层沉积在片状基底的表面上的装置，包括：注射器头，其包括设置有前体供体和前体排出物的沉积空间; 所述供应和排出设置成用于从所述前体供应源经由所述沉积空间向所述前体排放提供前体气体流; 使用中的沉积空间被注射器头和衬底表面限定; 包括轴承气体注入器的气体轴承，其被布置用于在所述喷射头和所述基板表面之间注入轴承气体，所述轴承气体因此形成气体轴承; 输送系统，其提供所述基底和所述注射器头沿着所述基底的平面的相对运动，以形成所述基底沿着所述输送平面传送的输送平面。 支撑部分，布置成与注射器头相对，支撑部分被构造成提供气体支承压力装置，其平衡输送平面中的喷射器头部气体轴承，使得基板由支撑压力排列保持在喷射器之间 头部和支撑部分。

公开(公告)号：US20150031204A1

公开(公告)日：2015-01-29

申请号：US14337331

申请日：2014-07-22

Applicant: Tokyo Electron Limited

Inventor： Hiroko SASAKI ,  Yu WAMURA ,  Masato KOAKUTSU

IPC: H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/308 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45551 ,  H01L21/76841 ,  H01L21/76856

Abstract: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.

Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，通过在基板上沉积氮化物膜，并且在将氮化物膜完全沉积在基板上之后将基板搬出处理室，从而将基板搬运到处理室中，进行成膜单元的一次操作 底物。 一次操作连续重复预定的次数，以将氮化物膜连续地沉积在多个基板上。 之后，通过向处理室内供给氧化气体，氧化处理室的内部。

公开(公告)号：US20150027371A1

公开(公告)日：2015-01-29

申请号：US14161984

申请日：2014-01-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin-Kwang Kim ,  Seung-Yong Song ,  Myung-Soo Huh ,  Suk-Won Jung ,  Choel-Min Jang ,  Jae-Hyun Kim ,  Sung-Chul Kim

IPC: C23C16/455

CPC classification number: C23C16/45574 ,  C23C16/45536 ,  C23C16/45551

Abstract: A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.

Abstract translation: 一种用于在基板上提供沉积膜的气相沉积设备，所述气相沉积设备包括多个第一喷嘴部分，其向所述基板注入第一原料; 多个第二喷嘴部，与所述多个第一喷嘴部交替地配置，向所述基板喷射第二原料; 扩散器单元，其将所述第二原料分配到所述多个第二喷嘴部分; 以及将第二原料供给到扩散器单元的供给单元。