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    WAFER CARRIER TRACK
    72.
    发明申请
    WAFER CARRIER TRACK 有权
    拖车履带

    公开(公告)号：US20100206235A1

    公开(公告)日：2010-08-19

    申请号：US12725308

    申请日：2010-03-16

    申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    IPC分类号： C23C16/458 ,  C23C16/00

    CPC分类号： C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67784

    摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

    摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

    Substrate for growing compound semiconductor and epitaxial growth method
    73.
    发明授权
    Substrate for growing compound semiconductor and epitaxial growth method 有权
    用于生长化合物半导体的衬底和外延生长法

    公开(公告)号：US07745854B2

    公开(公告)日：2010-06-29

    申请号：US12223453

    申请日：2007-02-02

    申请人： Hideki Kurita ,  Ryuichi Hirano

    发明人： Hideki Kurita ,  Ryuichi Hirano

    IPC分类号： H01L29/94 ,  C30B23/00 ,  C30B28/12

    CPC分类号： C30B25/18 ,  C30B29/40 ,  Y10T428/24479

    摘要： It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

    摘要翻译： 提供一种用于生长半导体的衬底，其在外延生长化合物半导体层，特别是Al基化合物半导体层的情况下，有效抑制类型与山丘缺陷不同的表面缺陷的发生。 在用于生长化合物半导体的衬底中，其中以相对于（100）面倾斜预定偏离角的晶体表面是主平面，由通过将（100）面的法向量投影获得的矢量的方向 （100）面上的主平面和[0-11]方向的一个方向，[01-1]方向，[011]方向和[0-1-1]方向设定为小于35 °，并且在衬底上外延生长化合物半导体层。

    Epitaxy with compliant layers of group-V species
    74.
    发明授权
    Epitaxy with compliant layers of group-V species 失效
    外延符合V族物质的顺应层

    公开(公告)号：US07687798B2

    公开(公告)日：2010-03-30

    申请号：US11392331

    申请日：2006-03-28

    申请人： Binqiang Shi

    发明人： Binqiang Shi

    IPC分类号： H01L29/00

    CPC分类号： C30B23/02 ,  C30B29/40

    摘要： The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is suppressed and thus dislocation defects do not form. In the first step, the surface of the first group III-V crystal (substrate) is cleansed by desorption of surface oxides. In the second step, a layer of condensed group-V species is condensed on the surface of the first group III-V crystal. In the third step, a mono-layer of constituent group-III atoms is deposited over the layer of condensed group-V species in order for the layer of constituent group-III atoms to retain the condensed group-V layer. Subsequently, the mono-layer of group-III atoms is annealed at a higher temperature. In the fourth step, bulk of the second group III-V crystal is grown with the condensed group-V layer accommodating the strain build-up which occurs during the bulk growth.

    摘要翻译： 本发明涉及具有第一晶格常数的第一III-V族晶体具有第二晶格常数的第二组III-V晶体的外延生长方法，其中与晶格失配外延相关的应变松弛被抑制，因此位错 缺陷不形成。 在第一步骤中，第一组III-V晶体（衬底）的表面通过表面氧化物的解吸而被清洁。 在第二步骤中，在第一组III-V晶体的表面上冷凝一组V族物质。 在第三步骤中，组分III族原子的单层沉积在冷凝基团-V族物质层上，以便构成组III族原子的层保留缩合基团V层。 随后，将III族原子的单层在较高温度下进行退火。 在第四步骤中，第二组III-V晶体的主体随着容纳在大量生长过程中发生的应变积聚的冷凝基团V层而生长。

    Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
    75.
    发明授权
    Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE 失效
    用于利用HVPE外延生长具有尖锐层界面的半导体器件结构的装置

    公开(公告)号：US07670435B2

    公开(公告)日：2010-03-02

    申请号：US10113222

    申请日：2002-03-28

    申请人： Denis V. Tsvetkov ,  Andrey E. Nikolaev ,  Vladimir A. Dmitriev

    发明人： Denis V. Tsvetkov ,  Andrey E. Nikolaev ,  Vladimir A. Dmitriev

    IPC分类号： C23C16/00

    CPC分类号： C30B25/16 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45514 ,  C30B25/02 ,  C30B25/08 ,  C30B25/14 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631

    摘要： A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).

    摘要翻译： 提供了用于制造薄III族氮化物层的方法和装置以及呈现出尖锐的层间界面的III族氮化物层。 根据一个方面，HVPE反应器包括与生长区相邻的一个或多个气体入口管，从而允许精细地控制反应性气体向衬底表面的输送。 根据另一方面，HVPE反应器包括生长区和生长中断区。 根据另一方面，HVPE反应器包括缓慢生长速率的镓源，从而允许生长薄层。 使用慢速生长速率镓源与常规镓源结合使得可以在单个炉运行期间制造器件结构，其包括厚层（即，利用常规镓源）和薄层（即，利用缓慢生长 镓镓源）。

    METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR
    78.
    发明申请
    METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR 有权
    化学气相沉积反应器的方法和装置

    公开(公告)号：US20090324379A1

    公开(公告)日：2009-12-31

    申请号：US12475169

    申请日：2009-05-29

    申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

    发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

    IPC分类号： H01L21/677 ,  B05C13/00

    CPC分类号： C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

    摘要： Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.

    摘要翻译： 本发明的实施方案一般涉及悬浮底物载体或载体。 在一个实施例中，提供了用于支撑和承载至少一个衬底或晶片的衬底载体，其包括包含上表面和下表面的衬底载体主体，以及设置在下表面内的至少一个压痕穴。 在另一个实施例中，衬底载体在上表面内至少包括开放的凹陷区域，以及设置在下表面内的至少两个压痕穴。 每个压痕袋可以是矩形的并且具有基本上垂直于下表面延伸的四个侧壁。 在另一个实施例中，提供一种用于浮置设置在基板载体上的基板的方法，其包括使基板载体的下表面暴露于气流，在基板载体下形成气垫，使基板载体悬浮在处理室内，以及 沿着处理室内的路径移动衬底载体。

    Inlet system for an MOCVD reactor
    79.
    发明授权
    Inlet system for an MOCVD reactor 有权
    用于MOCVD反应器的入口系统

    公开(公告)号：US07625448B2

    公开(公告)日：2009-12-01

    申请号：US10591906

    申请日：2006-08-28

    申请人： Martin Dauelsberg ,  Martin Conor ,  Gerhard Karl Strauch ,  Johannes Kaeppeler

    发明人： Martin Dauelsberg ,  Martin Conor ,  Gerhard Karl Strauch ,  Johannes Kaeppeler

    IPC分类号： C30B21/02

    CPC分类号： C23C16/45568 ,  C30B25/14 ,  C30B29/40

    摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.

    摘要翻译： 本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。 使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。 在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽 气流。 为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。