Abstract:
A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.
Abstract:
An image sensor with an array of pixels is provided. In order to achieve high image quality, it may be desirable to improve well capacity of individual pixels within the array by forming deep photodiodes in a thick substrate. When forming the array of pixels, conductive contacts may be formed in a back surface of the substrate opposing ground contacts located on a front side of the substrate. A conductive grid layer may be formed over the conductive contacts. A color filter layer may be formed over the conductive grid layer that may include a barrier grid in which color filter material is deposited. The conductive grid layer and conductive contacts may be biased to a voltage to improve the strength of electric fields in the substrate. Conductive contacts will thereby improve charge collection and electrical isolation and prevent electrical crosstalk and blooming.
Abstract:
A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.
Abstract:
A planar imaging sensor is provided. The planar imaging sensor comprises a plurality of photo detectors, wherein the plurality of photo detectors are divided into at least a first group and a second group. The number of photo detectors in the second group is larger than the number of photo detectors in the first group. The photo detectors of the first group are configured to have a first detection window, while the photo detectors of the second group are configured to have a second detection window. The second detection window is configured to start later in time than the first detection window.
Abstract:
There is provided a solid-state image pickup device including: a semiconductor substrate (21); a photodiode (11A, 11B) formed in the semiconductor substrate; a transistor (10) having a gate electrode (14) part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer (13) provided between the gate electrode and the photodiode.
Abstract:
A readout device includes a plurality of detecting circuits arranged in rows and columns to form a detecting array, and an output module. Each of the detecting circuits includes two transistors for generating a detection signal associated with impedance at a target site. Through selection of the rows and the columns of the detecting circuits, the output module outputs an output voltage signal having a magnitude positively correlated with magnitude of a selected one of the detection signals received from the detecting circuits.
Abstract:
A signal sampling circuit includes: a signal output unit configured to output a level signal to an output node in response to a control signal; a signal sampling unit coupled to the output node and configured to sample the level signal in a sampling period; a first current sinking unit configured to sink a constant current from the output node; and a second current sinking unit configured to sink a current from the output node after a time point where the control signal is deactivated.
Abstract:
A wavefront sensor (10) includes a radiation sensor (2) and an array (12) of lenslets (12A) that are optically coupled to the radiation sensor. The array of lenslets has a radiation receiving surface for receiving an incident wavefront and for focussing the wavefront at a plurality of focal positions upon the radiation sensor. Each of the lenslets comprises a diffractive optical element having an optical center that is located at a predetermined point for inducing an equal and opposite tilt to a portion of the wavefront incident on the lenslet. As a result, an aberration within that portion of the wavefront is cancelled. The predetermined point is determined to be equal to and opposite a focal spot shift of the lenslet.
Abstract:
An apparatus for detecting the presence of carryover particles in an upper region of a furnace, such as a smelt bed boiler, includes plural spaced apart detectors. These detectors monitor discrete portions of the interior of the furnace for the purpose of detecting carryover particles in such monitored portions. Signals indicative of the carryover particles are processed to obtain a count of the carryover particles. The carryover particle count may then be displayed. For example, the signals from all of the detectors may be averaged with trends and overall changes in count rates then displayed. In addition, the counts from the individual detectors may also be displayed to assist an operator in locating the source of excessive carryover particles in the furnace. An image sensor, such as a charged coupled device (CCD) detector, may be used to provide a visual display of detected carryover particles. The information on carryover particle count may be used in controlling parameters affecting the performance of the furnace directly, or indirectly by way of operator input.
Abstract:
An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.