利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

655 records (took 0.027 seconds)

    Optoelectronic Integrated Circuit
    71.
    发明申请
    Optoelectronic Integrated Circuit 有权
    光电集成电路

    公开(公告)号：US20150144872A1

    公开(公告)日：2015-05-28

    申请号：US14549369

    申请日：2014-11-20

    Applicant: The University of Connecticut ,  Opel Solar, Inc.

    Inventor： Geoff W. Taylor

    IPC: H01L33/06 ,  H01L31/18 ,  H01L31/0352 ,  H01L33/00 ,  H01L27/15 ,  H01L27/144

    CPC classification number: H01L29/0688 ,  B82Y10/00 ,  G02B6/125 ,  H01L21/0259 ,  H01L27/144 ,  H01L27/15 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/155 ,  H01L29/66977 ,  H01L29/7786 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01S5/026 ,  H01S5/06203 ,  H01S5/18358 ,  H01S5/309 ,  H01S5/34 ,  H01S5/3412

    Abstract: A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.

    Abstract translation: 半导体器件包括支撑多个层的衬底，其包括从量子阱（QD-in-QW）结构中的量子点偏移的至少一个调制掺杂量子阱（QW）结构。 调制掺杂QW结构包括通过间隔层与至少一个QW隔开的电荷片。 QD-QW结构将QD嵌入在一个或多个QW中。 QD-QW结构可以包括由势垒层分开的至少一个模板/发射子结构对，模板子结构具有比发射子结构更小的尺寸QD。 可以提供多个QD-in-QW结构以支持不同特征波长（例如1300nm至1550nm范围内的光波长）的电磁辐射的处理（发射，吸收，放大）。 该装置可以实现一种集成电路，该集成电路包括处理由QD-in-QW结构的QD支持的特征波长的电磁辐射的各种各样的装置。 还描述和要求保护其他半导体器件。

    Imaging Cell Array Integrated Circuit
    73.
    发明申请
    Imaging Cell Array Integrated Circuit 有权
    成像单元阵列集成电路

    公开(公告)号：US20150069217A1

    公开(公告)日：2015-03-12

    申请号：US14023525

    申请日：2013-09-11

    Applicant: Geoff W. Taylor

    Inventor： Geoff W. Taylor

    IPC: H01L27/146 ,  H01L31/0352

    CPC classification number: H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    Abstract: A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    Abstract translation: 提供一种半导体器件，其包括由形成在衬底上的多个层实现的成像单元的阵列，其中所述多个层包括与至少一个量子点结构间隔开的至少一个调制掺杂量子阱结构。 每个相应的成像单元包括与对应的电荷存储区域间隔开的成像区域。 成像区域的至少一个量子点结构产生由入射电磁辐射的吸收产生的光电流。 所述至少一个调制掺杂量子阱结构限定了用于横向转移光电流以用于电荷存储区域中的电荷累积并由其输出的掩埋沟道。 每个成像单元的至少一个调制掺杂量子阱结构和至少一个量子点结构可以设置在接收入射电磁辐射的谐振腔内或具有周期性阵列孔的结构化金属膜的下方。

    QUANTUM DOT INFRARED PHOTODETECTOR
    74.
    发明申请
    QUANTUM DOT INFRARED PHOTODETECTOR 有权
    量子红外光电转换器

    公开(公告)号：US20140361249A1

    公开(公告)日：2014-12-11

    申请号：US13915497

    申请日：2013-06-11

    Applicant: National Taiwan University

    Inventor： Si-Chen Lee ,  Jheng-Han Lee ,  Zong-Ming Wu

    IPC: H01L31/0352 ,  H01L27/146

    CPC classification number: H01L31/035218 ,  H01L27/14652 ,  H01L27/14694 ,  H01L31/0352

    Abstract: A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high temperatures is disclosed. The quantum dot infrared photodetector comprises at least one quantum well stack and a plurality of quantum dot layers. The quantum well stack is disposed between the pluralities of quantum dot layers. The quantum well stack comprises two spacer layers and a carrier supplying layer. The carrier supplying layer is disposed between the spacer layers. When the quantum dot infrared photodetector is applied with two bias voltages respectively, the carrier supplying layer supplies carriers to the to quantum dot layers.

    Abstract translation: 公开了一种量子点红外光电探测器（QDIP），其能够将光电流增强到比暗电流更高的水平和/或可以在高温下操作。 量子点红外光电探测器包括至少一个量子阱堆叠和多个量子点层。 量子阱堆叠设置在多个量子点层之间。 量子阱堆叠包括两个间隔层和载体供应层。 载体供给层设置在间隔层之间。 当量子点红外光电检测器分别施加两个偏置电压时，载体供电层向量子点层提供载流子。

    Multi-nary group IB and VIA based semiconductor
    77.
    发明授权
    Multi-nary group IB and VIA based semiconductor 有权
    多元组IB和基于VIA的半导体

    公开(公告)号：US08889469B2

    公开(公告)日：2014-11-18

    申请号：US13533761

    申请日：2012-06-26

    Applicant: David B. Jackrel ,  Katherine Dickey ,  Kristin Pollock ,  Jacob Woodruff ,  Peter Stone ,  Gregory Brown

    Inventor： David B. Jackrel ,  Katherine Dickey ,  Kristin Pollock ,  Jacob Woodruff ,  Peter Stone ,  Gregory Brown

    IPC: H01L31/032 ,  H01L31/0352 ,  H01L31/0749

    CPC classification number: H01L31/0322 ,  H01L31/035218 ,  H01L31/0749 ,  Y02E10/541

    Abstract: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    Abstract translation: 提供用于形成多元半导体的方法和装置。 在一个实施例中，提供了一种方法，其包括将前体材料沉积到基底上，其中前体材料可以包含或可以与添加剂一起使用，以使最终半导体层的后部中的IIIA族材料（例如Ga）的浓度最小化 。 添加剂可以是元素或合金形式的非铜IB族添加剂。 一些实施方案可以同时使用硒和硫，形成一个或多个半导体合金。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    METAL-CHALOGENIDE PHOTOVOLTAIC DEVICE WITH METAL-OXIDE NANOPARTICLE WINDOW LAYER
    78.
    发明申请
    METAL-CHALOGENIDE PHOTOVOLTAIC DEVICE WITH METAL-OXIDE NANOPARTICLE WINDOW LAYER 有权
    带金属氧化物纳米玻璃窗的金属氯化物光伏器件

    公开(公告)号：US20140326311A1

    公开(公告)日：2014-11-06

    申请号：US14371605

    申请日：2013-01-14

    Applicant: The Regents of the University of California

    Inventor： Yang Yang ,  Huanping Zhou ,  Bao Lei ,  Choong-Heui Chung ,  Brion P. Bob

    IPC: H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/032

    CPC classification number: H01L31/022466 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/035218 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A metal-chalcogenide photovoltaic device includes a first electrode, a window layer spaced apart from the first electrode, and a photon-absorption layer between the first electrode and the window layer. The photon-absorption layer includes a metal-chalcogenide semiconductor. The window layer includes a layer of metal-oxide nanoparticles, and at least a portion of the window layer provides a second electrode that is substantially transparent to light within a range of operating wavelengths of the metal-chalcogenide photovoltaic device. A method of producing a metal-chalcogenide photovoltaic device includes providing a photovoltaic substructure, providing a solution of metal-oxide nanoparticles, and forming a window layer on the substructure using the solution of metal-oxide nanoparticles such that the window layer includes a layer of metal-oxide nanoparticles formed by a solution process.

    Abstract translation: 金属硫族化物光伏器件包括第一电极，与第一电极间隔开的窗口层，以及位于第一电极和窗口层之间的光子吸收层。 光子吸收层包括金属 - 硫族化物半导体。 窗口层包括金属氧化物纳米颗粒层，并且窗口层的至少一部分提供对金属硫属元素化物质光伏器件的工作波长范围内的光基本透明的第二电极。 制备金属 - 硫族化物光伏器件的方法包括提供光伏子结构，提供金属氧化物纳米颗粒的溶液，以及使用金属氧化物纳米颗粒的溶液在子结构上形成窗口层，使得窗口层包括 通过溶液法形成的金属氧化物纳米颗粒。

Patent Agency Ranking