公开(公告)号：US20230291181A1

公开(公告)日：2023-09-14

申请号：US18321076

申请日：2023-05-22

Applicant: NICHIA CORPORATION

Inventor： Tomokazu TAJI

IPC: H01S5/40 ,  H01S5/00 ,  H01S5/30 ,  G01R31/44 ,  G01R31/26 ,  H01S5/0237 ,  H01S5/02255 ,  H01S5/02257

CPC classification number: H01S5/4018 ,  H01S5/0014 ,  H01S5/3013 ,  G01R31/44 ,  G01R31/2601 ,  G01R31/2635 ,  H01S5/0237 ,  H01S5/02255 ,  H01S5/02257 ,  H01S5/0087 ,  H01S5/02208

Abstract: A light emitting device includes: a base including a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; and a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base. The base includes a frame surrounding the first semiconductor laser element and the second semiconductor laser element in a top view. The light emitting device further includes a base cap fixed to the frame such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series.

公开(公告)号：US11757250B2

公开(公告)日：2023-09-12

申请号：US16725410

申请日：2019-12-23

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: H01S5/02326 ,  H04B10/50 ,  H01S5/22 ,  H01S5/323 ,  H01S5/34 ,  H01S5/00 ,  G01S7/481 ,  G01S17/10 ,  G02B27/09 ,  H04B10/116 ,  H04B10/40 ,  F21V9/32 ,  H01S5/02212 ,  H01S5/042 ,  H01S5/024 ,  F21Y115/30 ,  F21Y113/13 ,  H01S5/343 ,  G02B26/08 ,  F21Y115/10 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/44 ,  H01S5/02251 ,  H01S5/02255 ,  H01S5/02345

CPC classification number: H01S5/02326 ,  F21V9/32 ,  G01S7/4815 ,  G01S17/10 ,  G02B27/095 ,  G02B27/0977 ,  H01S5/0071 ,  H01S5/02212 ,  H01S5/02469 ,  H01S5/0428 ,  H01S5/22 ,  H01S5/3235 ,  H01S5/32308 ,  H01S5/3401 ,  H04B10/116 ,  H04B10/40 ,  H04B10/503 ,  F21Y2113/13 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B26/0833 ,  H01L33/0045 ,  H01L33/105 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01S5/02251 ,  H01S5/02255 ,  H01S5/02345 ,  H01S5/3432 ,  H01S5/34346 ,  H01S2304/02 ,  H01S2304/04

Abstract: A portable lighting apparatus is provided with a gallium-and-nitrogen containing laser diode based white light source combined with an infrared illumination source which are driven by drivers disposed in a printed circuit board assembly enclosed in a compact housing and powered by a portable power supply therein. The portable lighting apparatus includes a first wavelength converter configured to output a white-color emission and an infrared emission. A beam shaper may be configured to direct the white-color emission and the infrared emission to a front aperture of a compact housing of the portable lighting apparatus. An optical transmitting unit is configured to project or transmit a directional light beam of the white light emission and/or the infrared emission for illuminating a target of interest, transmitting a pulsed sensing signal or modulated data signal generated by the drivers therein. In some configurations, detectors are included for depth sensing and visible/infrared light communications.

公开(公告)号：US20230268712A1

公开(公告)日：2023-08-24

申请号：US18310106

申请日：2023-05-01

Applicant: NICHIA CORPORATION ,  SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Takuya Hashimoto ,  Eiichiro Okahisa ,  Katsuya Nakazawa ,  Shigeru Matsushita ,  Sumio Uehara ,  Suguru Kobayashi ,  Kazuhito Yumoto

IPC: H01S5/0235 ,  H01S5/40 ,  H01S5/024 ,  H01S5/02208 ,  H01S5/02355

CPC classification number: H01S5/0235 ,  H01S5/40 ,  H01S5/02469 ,  H01S5/02208 ,  H01S5/02355 ,  H01S5/02255

Abstract: A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.

公开(公告)号：US20230231362A1

公开(公告)日：2023-07-20

申请号：US17926876

申请日：2021-05-04

Applicant: ams-OSRAM International GmbH

Inventor： Bruno JENTZSCH ,  Hubert HALBRITTER

IPC: H01S5/10 ,  H01S5/42 ,  H01S5/343 ,  H01S5/183 ,  H01S5/185 ,  H01S5/02255 ,  H01S5/026

CPC classification number: H01S5/1021 ,  H01S5/423 ,  H01S5/34326 ,  H01S5/3432 ,  H01S5/18305 ,  H01S5/185 ,  H01S5/02255 ,  H01S5/026 ,  G01S7/4814

Abstract: A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement. The vertical laser element is arranged above the first semiconductor layer arrangement on the side of the first main surface in a beam path of electromagnetic radiation reflected at one of the lateral boundaries of the first semiconductor layer arrangement (112).

公开(公告)号：US11705692B2

公开(公告)日：2023-07-18

申请号：US16940659

申请日：2020-07-28

Applicant: Cisco Technology, Inc.

Inventor： Jock T. Bovington

IPC: H01S5/0683 ,  H01S5/02255 ,  H01S5/02253 ,  H01S5/02216 ,  H01S5/065 ,  H01S5/00 ,  H01S5/0687

CPC classification number: H01S5/0683 ,  H01S5/0085 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/0653 ,  H01S5/0654 ,  H01S5/0687

Abstract: Laser Side Mode Suppression Ratio (SMSR) control is provided via a logic controller configured to measure an SMSR of a carrier wave upstream of a modulator and measure an Average Optical Power (AOP) of the carrier wave downstream of the modulator; transmit a bias voltage based on the SMSR and the AOP to a laser driver for a laser generating the carrier wave; and transmit an attenuation level based on the SMSR and the AOP to a Variable Optical Attenuator (VOA) upstream of the modulator. In various embodiments the attenuation level and bias voltage can rise or fall together, or one may rise and one may fall to ensure the output optical signal meets specified SMSR and AOP values.

公开(公告)号：US11695255B2

公开(公告)日：2023-07-04

申请号：US17090429

申请日：2020-11-05

Applicant: NICHIA CORPORATION

Inventor： Tomokazu Taji

IPC: H01S5/40 ,  H01S5/00 ,  H01S5/30 ,  G01R31/44 ,  G01R31/26 ,  H01S5/0237 ,  H01S5/02255 ,  H01S5/02257 ,  H01S5/02208 ,  H01S5/02325 ,  H01S5/02345

CPC classification number: H01S5/4018 ,  G01R31/2601 ,  G01R31/2635 ,  G01R31/44 ,  H01S5/0014 ,  H01S5/0087 ,  H01S5/0237 ,  H01S5/02255 ,  H01S5/02257 ,  H01S5/3013 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/02208 ,  H01S5/02325 ,  H01S5/02345 ,  H01S5/4031

Abstract: A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

公开(公告)号：US11677211B2

公开(公告)日：2023-06-13

申请号：US17063140

申请日：2020-10-05

Applicant: NICHIA CORPORATION ,  SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Takuya Hashimoto ,  Eiichiro Okahisa ,  Katsuya Nakazawa ,  Shigeru Matsushita ,  Sumio Uehara ,  Suguru Kobayashi ,  Kazuhito Yumoto

IPC: H01S5/02208 ,  H01S5/0235 ,  H01S5/40 ,  H01S5/024 ,  H01S5/02355 ,  H01S5/02255

CPC classification number: H01S5/0235 ,  H01S5/02208 ,  H01S5/02355 ,  H01S5/02469 ,  H01S5/40 ,  H01S5/02255

Abstract: A semiconductor device includes: a bottom plate having an upper surface and a lower surface, wherein the upper surface comprises an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part; a frame joined to the upper surface of the bottom plate and comprising a first through-hole that penetrates the frame; a plate jointed to the outside or inside surface of the frame, the plate comprising a second through-hole that penetrates the plate in a same direction as that of the first through-hole, a thickness of the plate being greater than a thickness of the frame; a lead terminal inserted into the first through-hole and the second through-hole; a fixing member provided in the second through-hole and fixing the lead terminal; and a semiconductor element fixed to the inside part.

公开(公告)号：US20230178967A1

公开(公告)日：2023-06-08

申请号：US18162063

申请日：2023-01-31

Applicant: NICHIA CORPORATION

Inventor： Takuya HASHIMOTO

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/323 ,  H01S5/32 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/02345

CPC classification number: H01S5/4025 ,  H01S5/02469 ,  H01S5/323 ,  H01S5/3211 ,  H01S5/4018 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/02345

Abstract: A light emitting device includes: a substrate including a main surface; a first projection positioned on the main surface, the first projection including an upper surface and first and second lateral surfaces, wherein the first lateral surface of the first projection comprises a first reflective part, and the second lateral surface of the first projection comprises a second reflective part; a first laser element positioned on the main surface at a first reflective part side with respect to the first projection, the first laser element being configured to irradiate first laser light to the first reflective part; a second laser element positioned on the main surface at a second reflective part side with respect to the first projection, the second laser element being configured to irradiate second laser light to the second reflective part; and a first optical member bonded to the upper surface of the first projection.

公开(公告)号：US20230170672A1

公开(公告)日：2023-06-01

申请号：US17921193

申请日：2021-05-25

Applicant: Brolis Sensor Technology, UAB

Inventor： Kristijonas Vizbaras

IPC: H01S5/20 ,  H01S5/02255 ,  H01S5/22 ,  H01S5/065 ,  H01S5/343 ,  H01S5/06

CPC classification number: H01S5/2054 ,  H01S5/02255 ,  H01S5/22 ,  H01S5/065 ,  H01S5/34346 ,  H01S5/0614 ,  H01S2304/02

Abstract: Solid-state optical devices (10) enable tuning of an electrically tunable depletion region (200) to reduce and block lateral (in-junction) carrier spreading. This capability reduces the negative effects of gain-guiding in the junction plane and reduces an astigmatism of an emitted light beam. The tunable depletion region is created by forming a highly resistive Schottky contact (105, 110) or metal-insulator-semiconductor (MIS) structure (205, 210) next to a waveguide (optical mode propagation) and current injection region (215), where lateral spread due to diffusion is expected. The depletion region area is tuned by applying a bias to the highly resistive Schottky contact or the MIS contact structure. Such contacts or similar lossy structures reduce in-junction plane gain-guiding also when unbiased by creating additional optical loss for the mode, thus reducing the effective carrier density participating in light generation, thereby reducing astigmatism.

公开(公告)号：US11655958B2

公开(公告)日：2023-05-23

申请号：US17864018

申请日：2022-07-13

Applicant: NICHIA CORPORATION

Inventor： Seiji Kiyota ,  Kazuma Kozuru ,  Eiichiro Okahisa

IPC: F21V5/00 ,  H01S5/00 ,  F21V5/04 ,  G02B19/00 ,  G02B3/00 ,  H01S5/40 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/02345

CPC classification number: F21V5/007 ,  F21V5/04 ,  G02B3/0056 ,  G02B19/0057 ,  H01S5/0071 ,  H01S5/02216 ,  H01S5/02253 ,  H01S5/02255 ,  H01S5/405 ,  H01S5/4018 ,  H01S5/4025 ,  H01S5/02345

Abstract: A light-emitting device includes: a substrate comprising a base; a semiconductor laser element disposed on an upper surface of the base; a sealing member located above the base and fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens member fixed to the sealing member by adhesive, the lens member comprising a lens section through which light emitted from the semiconductor laser element passes. A space between the sealing member and the lens member is open to an area outside the light-emitting device.