公开(公告)号：US07410824B2

公开(公告)日：2008-08-12

申请号：US11009436

申请日：2004-12-09

申请人： Byung Tai Do ,  Romeo Emmanuel P. Alvarez ,  Yaojian Lin

发明人： Byung Tai Do ,  Romeo Emmanuel P. Alvarez ,  Yaojian Lin

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/4763

CPC分类号： H05K3/3484 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K3/1216 ,  H05K3/3452 ,  H05K2203/043 ,  H05K2203/0568 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： A method for solder bumping provides a substrate and forms a film on the substrate. The film has openings therethrough. A stencil is aligned on the film. The stencil has openings therethrough over the openings through the film. Solder paste is printed onto the substrate and into the openings through the stencil and the openings through the film. The solder paste is reflowed to form solder balls therefrom. The stencil and the film are then removed.

摘要翻译： 焊接凸块的方法提供基板并在基板上形成膜。 该膜具有开口。 模板在电影上对齐。 模板在穿过薄膜的开口上方具有穿过其的开口。 焊膏通过模版印刷到基板上并通过薄膜印刷到开口中。 焊膏被回流以从其形成焊球。 然后去除模板和胶片。

公开(公告)号：US20080029859A1

公开(公告)日：2008-02-07

申请号：US11462545

申请日：2006-08-04

申请人： Byung Tai Do ,  Heap Hoe Kuan

发明人： Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L23/495

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L24/27 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401

摘要： An integrated circuit package system that includes: providing a substrate with a protective coating; attaching a labeling film to a support member in a separate process; joining the protective coating and the labeling film; and dicing the substrate, the protective coating, and the labeling film to form the integrated circuit package system.

摘要翻译： 一种集成电路封装系统，包括：为基板提供保护涂层; 在单独的工艺中将标记膜附着到支撑构件上; 连接保护涂层和标签膜; 并对衬底，保护涂层和标记膜进行切割，形成集成电路封装系统。

公开(公告)号：US20070212903A1

公开(公告)日：2007-09-13

申请号：US11276684

申请日：2006-03-10

申请人： Jeffrey Punzalan ,  Byung Tai Do ,  Henry Bathan ,  Zigmund Camacho

发明人： Jeffrey Punzalan ,  Byung Tai Do ,  Henry Bathan ,  Zigmund Camacho

IPC分类号： H05K1/00

CPC分类号： H01L23/3107 ,  H01L23/49503 ,  H01L23/49541 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2924/00

摘要： A non-leaded integrated circuit package system is provided providing a die paddle of a lead frame, forming a dual row of terminals including an outer terminal and an inner terminal, and selectively fusing an inner terminal and an adjacent inner terminal to form a fused lead.

摘要翻译： 提供了一种非引线集成电路封装系统，其提供引线框架的管芯焊盘，形成包括外部端子和内部端子的双列端子，并且选择性地熔合内部端子和相邻的内部端子以形成熔接引线 。

公开(公告)号：US07205651B2

公开(公告)日：2007-04-17

申请号：US10825910

申请日：2004-04-16

申请人： Byung Tai Do ,  Byung Hoon Ahn

发明人： Byung Tai Do ,  Byung Hoon Ahn

IPC分类号： H01L23/34

CPC分类号： H01L25/0657 ,  H01L2224/48237 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/01078 ,  H01L2924/01079

摘要： A substrate is provided. A first die is attached to the substrate. The first die is electrically connected to the substrate. A heat sink having an undercut around its periphery is attached to the first die. A second die is attached to the heat sink. The second die is electrically connected to the substrate, and the first die, the heat sink, and the second die are encapsulated.

摘要翻译： 提供基板。 第一裸片附着在基片上。 第一管芯与衬底电连接。 具有围绕其周边的底切的散热器附接到第一模具。 第二个模具连接到散热器。 第二管芯与衬底电连接，第一管芯，散热器和第二管芯被封装。

公开(公告)号：US20070075421A1

公开(公告)日：2007-04-05

申请号：US11163116

申请日：2005-10-05

申请人： Heap Hoe Kuan ,  Byung Tai Do

发明人： Heap Hoe Kuan ,  Byung Tai Do

IPC分类号： H01L23/48

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L24/11 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： An ultra-thin wafer system providing thinning a wafer on a protective tape to an ultra-thin thickness and forming electrical interconnects on the thinned wafer on a support plate.

摘要翻译： 一种超薄晶片系统，其将保护带上的晶片薄化到超薄厚度，并在支撑板上的薄化晶片上形成电互连。

公开(公告)号：US10388584B2

公开(公告)日：2019-08-20

申请号：US13225683

申请日：2011-09-06

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/31 ,  H01L21/56 ,  H04B1/00 ,  H04B7/14 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L25/00 ,  H01L25/10 ,  H01L23/29 ,  H01L25/03

摘要： A semiconductor device has a temporary layer, such as a dam material or adhesive layer, formed over a carrier. A plurality of recesses is formed in the temporary layer. A first semiconductor die is mounted within the recesses of the temporary layer. An encapsulant is deposited over the first semiconductor die and temporary layer. The encapsulant extends into the recesses in the temporary layer. The carrier and temporary layer are removed to form recessed interconnect areas around the first semiconductor die. Alternatively, the recessed interconnect areas can be formed the carrier or encapsulant. Multiple steps can be formed in the recesses of the temporary layer. A conductive layer is formed over the first semiconductor die and encapsulant and into the recessed interconnect areas. A second semiconductor die can be mounted on the first semiconductor die. The semiconductor device can be integrated into PiP and Fi-PoP arrangements.

公开(公告)号：US09847253B2

公开(公告)日：2017-12-19

申请号：US12757750

申请日：2010-04-09

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Seng Guan Chow

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Seng Guan Chow

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L25/03 ,  H01L25/065 ,  H01L25/10 ,  H01L23/538

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor package-on-package (PoP) device includes a first die incorporating a through-hole via (THV) disposed along a peripheral surface of the first die. The first die is disposed over a substrate or leadframe structure. A first semiconductor package is electrically connected to the THV of the first die, or electrically connected to the substrate or leadframe structure. An encapsulant is formed over a portion of the first die and the first semiconductor package.

公开(公告)号：US09799589B2

公开(公告)日：2017-10-24

申请号：US13428251

申请日：2012-03-23

申请人： Byung Tai Do ,  Arnel Senosa Trasporto ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Arnel Senosa Trasporto ,  Linda Pei Ee Chua

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L21/48 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/4828 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49861 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16245 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48177 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8385 ,  H01L2224/96 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: forming a conductive trace having a terminal end and a circuit end; forming a terminal on the terminal end; connecting an integrated circuit die directly on the circuit end of the conductive trace, the integrated circuit die laterally offset from the terminal, the active side of the integrated circuit die facing the circuit end; and forming an insulation layer on the terminal and the integrated circuit die, the integrated circuit die covered by the insulation layer.

公开(公告)号：US09576873B2

公开(公告)日：2017-02-21

申请号：US13325881

申请日：2011-12-14

申请人： Byung Tai Do ,  Arnel Senosa Trasporto ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Arnel Senosa Trasporto ,  Linda Pei Ee Chua

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/495 ,  H01L21/48 ,  H01L25/10 ,  H01L23/00

CPC分类号： H01L23/3128 ,  H01L21/4832 ,  H01L21/563 ,  H01L21/565 ,  H01L23/49517 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: providing routable traces including a first routable trace with a top plate and a second routable trace; mounting an integrated circuit partially over a second routable trace; forming an encapsulation over and around the first routable trace and the integrated circuit; forming a hole through the encapsulation to the top plate; and forming a protective coat directly on the encapsulation with the first routable trace between and in contact with the protective coat and the encapsulation.

摘要翻译： 一种制造集成电路封装系统的方法包括：提供可路由的迹线，其包括具有顶板和第二可布线迹线的第一可布线轨迹; 将集成电路部分地安装在第二可路由轨迹上; 在第一可路由迹线和集成电路上形成封装; 通过封装形成一个孔到顶板; 以及直接在封装上形成保护涂层，其中第一可路由迹线在保护涂层和封装之间并与之接触。

公开(公告)号：US09343429B2

公开(公告)日：2016-05-17

申请号：US12683008

申请日：2010-01-06

申请人： Reza A. Pagaila ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Byung Tai Do

IPC分类号： H01L23/544 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L25/03 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

摘要翻译： 通过在晶片上形成半导体管芯之间的间隙来制造半导体器件。 绝缘材料沉积在间隙中。 从半导体晶片的第一侧去除绝缘材料的第一部分以形成第一凹口。 第一缺口小于半导体管芯的厚度。 导电材料沉积到第一凹口中以在间隙内形成导电通孔的第一部分。 从半导体晶片的第二侧去除绝缘材料的第二部分以形成第二凹口。 第二凹口延伸穿过绝缘材料到第一凹口。 导电材料沉积到第二凹口中以在间隙内形成导电通孔的第二部分。 半导体晶片通过间隙被分离，以分离半导体管芯。