公开(公告)号：US08945421B2

公开(公告)日：2015-02-03

申请号：US13184271

申请日：2011-07-15

Applicant: Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Detlef Starick

Inventor： Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Detlef Starick

IPC: H01L33/50 ,  C09K11/80 ,  C09K11/79 ,  C09K11/59 ,  C09K11/77

CPC classification number: C09K11/7734 ,  C09K11/025 ,  H01L33/501 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/19107 ,  Y02B20/181 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2998 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A surface-modified silicate luminophore includes a silicate luminophore and a coating includes at least one of (a) a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and (b) a combination of the fluorinated coating and at least one moisture barrier layer. The moisture barrier layer includes MgO, Al2O3, Y2O3, La2O3, Gd2O3, Lu2O3, and SiO2 or the corresponding precursors, and the coating is disposed on the surface of the silicate luminophore.

Abstract translation: 表面改性硅酸盐发光体包括硅酸盐发光体，涂层包括（a）包含氟化无机物，氟化有机物或氟化无机和有机物的组合的氟化涂层中的至少一种，氟化涂层产生疏水性 表面部位和（b）氟化涂层和至少一个防潮层的组合。 防潮层包括MgO，Al 2 O 3，Y 2 O 3，La 2 O 3，Gd 2 O 3，Lu 2 O 3和SiO 2或相应的前体，并且涂层设置在硅酸盐发光体的表面上。

公开(公告)号：US08810124B2

公开(公告)日：2014-08-19

申请号：US12581507

申请日：2009-10-19

Applicant: Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

Inventor： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC: H05B33/14 ,  H05B33/08 ,  F21K99/00 ,  H01L25/075 ,  H01L33/50 ,  F21Y113/00

CPC classification number: H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

Abstract: Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

Abstract translation: 公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。 根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。 使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

公开(公告)号：US08695111B2

公开(公告)日：2014-04-08

申请号：US13275451

申请日：2011-10-18

Applicant: Chung Hoon Lee

Inventor： Chung Hoon Lee

IPC: G01Q70/10 ,  G01Q70/16 ,  G01Q70/14

CPC classification number: G01Q70/10 ,  G01N23/00 ,  G01Q60/38 ,  G01Q70/14 ,  G01Q70/16

Abstract: Method for producing a probe for atomic force microscopy with a silicon nitride cantilever and an integrated single crystal silicon tetrahedral tip with high resonant frequencies and low spring constants intended for high speed AFM imaging.

Abstract translation: 用于制备具有氮化硅悬臂的原子力显微镜探针的方法和用于高速AFM成像的具有高谐振频率和低弹簧常数的集成单晶硅四面体尖端的方法。

公开(公告)号：US08643029B2

公开(公告)日：2014-02-04

申请号：US13074761

申请日：2011-03-29

Applicant: Chung Hoon Lee ,  Lacroix Yves ,  Hyung Soo Yoon ,  Young Ju Lee

Inventor： Chung Hoon Lee ,  Lacroix Yves ,  Hyung Soo Yoon ,  Young Ju Lee

IPC: H01L33/00 ,  H01L29/18 ,  H01L29/40 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L27/153 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.

Abstract translation: 公开了一种发光器件，其具有多个发光单元及其上安装有该发光单元的封装。 发光器件包括形成在衬底上的多个发光单元，每个发光单元具有位于N型半导体层的一部分上的N型半导体层和P型半导体层。 多个发光单元被接合到副安装座基板。 因此，可以容易地消散从发光单元产生的热量，从而可以减少发光器件上的热负荷。 同时，由于使用形成在副安装座基板上的连接电极或电极层使多个发光单元电连接，所以可以提供串联连接的发光单元阵列。 此外，可以提供一种能够由AC电源直接驱动的发光器件，通过将串联连接的发光单元阵列反向并联连接。

公开(公告)号：US08501040B2

公开(公告)日：2013-08-06

申请号：US13363115

申请日：2012-01-31

Applicant: Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Stefan Tews

Inventor： Chung Hoon Lee ,  Walter Tews ,  Gundula Roth ,  Stefan Tews

IPC: C09K11/08 ,  C09K11/66

CPC classification number: C09K11/7734 ,  Y02B20/181

Abstract: Disclosed are non-stoichiometric Copper Alkaline Earth Silicate phosp hors activated by divalent europium for using them as high temperature stable luminescent mat erials for ultraviolet or daylight excitation. The phosphors are represented as the formula (BauSryCawCux)3−y(Zn,Mg,Mn)zSi1+bO5+2b:Eua. The non-stoichiometric tetragonal silicat e is prepared in a high temperature solid state reaction with a surplus of silica in the starting mixture. Furthermore, luminescent tetragonal Copper Alkaline Earth Silicates are provided for LED applications, which have a high color temperature range from about 2,000K to 8,000K or 10,000 K showing a CRI with Ra=80˜95, when mixed with other luminescent materials.

Abstract translation: 公开了由二价铕活化的非化学计量的铜碱性硅酸盐磷酸盐，用于将其用作紫外线或日光激发的高温稳定发光材料。 荧光体用式（BauSryCawCux）3-y（Zn，Mg，Mn）zSi1 + bO5 + 2b：Eua表示。 非化学计量的四方硅酸盐e在起始混合物中与多余的二氧化硅在高温固态反应中制备。 此外，发光四方铜碱土硅酸盐提供用于LED应用，当与其他发光材料混合时，其具有约2,000K至8,000K或10,000K的高色温，显示Ra = 80〜95的CRI。

公开(公告)号：US08487525B2

公开(公告)日：2013-07-16

申请号：US12598891

申请日：2008-05-02

Applicant: Chung Hoon Lee

Inventor： Chung Hoon Lee

IPC: H01J1/62

CPC classification number: C09K11/7731 ,  C09K11/0883 ,  C09K11/7734 ,  C09K11/7774 ,  C09K11/7792 ,  F21K9/00 ,  H01L2933/0091

Abstract: According to the present invention, there is provided a light emitting device that includes at least one laser diode configured to emit light in at least one first wavelength region selected from spectrum regions including ultraviolet light, blue light, and green light; and a light emitting material for emitting light in a second wavelength region by the light emitted from the laser diode, the second wavelength region being different from the first wavelength region. A color-mixed light is made by the light in the first wavelength region and the light in the second wavelength region. Since the laser diode is used as a light emission source, the color-mixed light implemented by the light emitting device has high linearity, so that it may be effectively used for long-distance illumination and flash.

Abstract translation: 根据本发明，提供了一种发光器件，其包括：至少一个激光二极管，配置为在从包括紫外光，蓝光和绿光的光谱区域中选择的至少一个第一波长区域发光; 以及用于通过由激光二极管发射的光来发射第二波长区域的光的发光材料，所述第二波长区域与所述第一波长区域不同。 由第一波长区域的光和第二波长区域的光产生混色光。 由于激光二极管用作发光源，所以由发光器件实现的混色光具有高线性度，因此可以有效地用于长距离照明和闪光。

公开(公告)号：US08445933B2

公开(公告)日：2013-05-21

申请号：US12782287

申请日：2010-05-18

Applicant: Chung Hoon Lee ,  Keon Young Lee ,  Hong San Kim ,  Dae Won Kim ,  Hyuck Jung Choi

Inventor： Chung Hoon Lee ,  Keon Young Lee ,  Hong San Kim ,  Dae Won Kim ,  Hyuck Jung Choi

IPC: H01L33/62

CPC classification number: H01L33/36 ,  F21K9/00 ,  H01L27/153 ,  H01L33/20 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00014

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

公开(公告)号：US20130026498A1

公开(公告)日：2013-01-31

申请号：US13640943

申请日：2011-04-07

Applicant: Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Kal ,  Won Cheol Seo

Inventor： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Kal ,  Won Cheol Seo

IPC: H01L33/48 ,  B32B9/04 ,  B32B7/02 ,  B32B15/04

CPC classification number: H01L33/0079 ,  Y10T428/24942

Abstract: A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

Abstract translation: 公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。 在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

公开(公告)号：US08350279B2

公开(公告)日：2013-01-08

申请号：US12442511

申请日：2007-09-04

Applicant: Chung Hoon Lee ,  Jae Ho Lee ,  Mi Hae Kim

Inventor： Chung Hoon Lee ,  Jae Ho Lee ,  Mi Hae Kim

IPC: H01L29/26 ,  H01L29/22

CPC classification number: H01L27/153 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/49107

Abstract: A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.

Abstract translation: 公开了具有AlInGaP有源层的发光二极管及其制造方法。 发光二极管包括基板。 多个发光单元被定位成彼此间隔开，其中每个发光单元具有第一导电型下半导体层，AlInGaP有源层和第二导电型上半导体层。 同时，在衬底和发光单元之间插入半绝缘层。 此外，电线串联连接多个发光单元。 因此，可以提供一种发光二极管，其中多个发光单元通过由AC电源驱动的导线彼此串联连接。

公开(公告)号：US08269228B2

公开(公告)日：2012-09-18

申请号：US12178764

申请日：2008-07-24

Applicant: Chung Hoon Lee ,  Ki Bum Nam ,  Dae Won Kim

Inventor： Chung Hoon Lee ,  Ki Bum Nam ,  Dae Won Kim

IPC: H01L29/18

CPC classification number: H01L27/156 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/16 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/48137

Abstract: Disclosed is a light emitting diode (LED) operated by being directly connected to an AC power source. An AC LED according to the present invention comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate; and wires electrically connecting the light emitting cells; wherein the light emitting cells are connected in series by the wires to form a serial array, the single substrate is a non-polar substrate, and the light emitting cells have non-polar GaN-based semiconductor layers grown on the non-polar substrate.

Abstract translation: 公开了通过直接连接到AC电源来操作的发光二极管（LED）。 根据本发明的交流发光二极管包括二维排列在单个基板上的多个发光单元; 以及电连接所述发光单元的电线; 其中所述发光单元通过所述导线串联连接以形成串联阵列，所述单个衬底是非极性衬底，并且所述发光单元具有在非极性衬底上生长的非极性GaN基半导体层。